2N415 Search Results

TO111

Abstract: TO61 U 114
Contextual Info: G27 ELECTRONICS, INC. \ -15 COLLECTOR CURRENT = 10 AM PS NPN TYPES— ConWnued C ue VCBO Volt 2N3920 2N4070 2N4071 2M 150 JAN 2N4150 JT X • ÎN4150 2N4301 2N4347 2N4348 2N5006 T O -3 T O -3 T O -3 T O -5 T O -5 120 120 200 100 100 60 100 150 80 80 6 8

Contextual Info: 2N4150 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)

Contextual Info: 2N4150 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)

Contextual Info: 2N4150 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)

TRANSISTOR SE 135

Abstract: 11C1 diode p 2N3421
Contextual Info: General Semiconductor Industries, Inc. ' f e "11" Typical Device Types: 2N3418 - 2N3421, 2N4150 | DIODE & TRANSISTOR CHIPS nnAi u ui ItPfJ NPN T R A N S IS T O R C H IP 10 AMP Fast Switching Bonding Pad Areas Base 1 31 x 13.5 mils Front Metallization: Aluminum

2n3920

Abstract: 2n8249
Contextual Info: 0043592 A P I A P I _ 2 6 C ELECTRONICS INC 2b ELECTRONICS INC n— — D eT | O D ^ S 1^ a< 0000230 T | COLLECTOR CURRENT = 10 AMPS NPN TYPES - CONTINUED Device No 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JTX * 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008

2n4150

Contextual Info: NPN Power Silicon Transistor 2N4150, 2N5237 & 2N5238 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/384 • TO-5 Package Maximum Ratings Symbol 2N4150 2N5237 2N5238 Units Collector - Emitter Voltage Ratings VCEO 70 120 170 Vdc Collector - Base Voltage

Contextual Info: NPN Power Silicon Transistor 2N4150 Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/394 • TO-5 Package Maximum Ratings Symbol 2N4150 Units Collector - Emitter Voltage Ratings VCEO 70 Vdc Collector - Base Voltage

2N4150

Abstract: 110VDC 2N4150S 2N5237 2N5237S 2N5238 2N5238S 70VDC
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 DEVICES LEVELS 2N4150 2N4150S 2N5237 2N5237S 2N5238

JAN2N5339

Abstract: JANTX2N4150 JANS2N3439
Contextual Info: Microsemi NPN Transistors Part Number JANTXV2N3440L 2N3439 2N3439L JAN2N3439 JAN2N3439L JANS2N3439 JANS2N3439S JANTX2N3439 JANTX2N3439L JANTXV2N3439 JANTXV2N3439L 2N1479 2N1481 2N1480 2N1482 2N2890 2N2891 2N4225 2N2983 2N2985 2N2984 2N2986 2N3017 2N4150 2N4150S

Contextual Info: POWER TRANSISTORS JAN, JANTX & JANTXV 2N4150 10 Amp, 70V, Planar NPN FEATURES • M e ets MIL-S-19500/394 • C ollector-Base Voltage: up to 100V • Peak Collector Current: 10A • Fa st Sw itch in g • Low Saturation Voltage D E S C R IP T IO N U nitrode power tra n sistors provide a

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 VcEO Ic sus (max) VOLTS AMPS hpE@i<yvCE ^CE(sit) PACKAGE DEVICE TYPE (min/max @ A/V) NPN TO-39 2N4150A 70 5.0 40-120@5/5 .6@5/,5 2N5010 500h .5 30-180@.025/10 2N5011 600h .5 2N5012 700h 2N5013 @ Ic/I b

2N3920

Abstract: 2N4070 2N4071 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048
Contextual Info: 0043592 A P I ELECTRONICS INC_ A P I ELECTRONICS INC 2^ 26f nn?*n n— DE | DDMBSTS 0000230 T | COLLECTOR CURRENT = 10 AMPS NPN TYPES - CONTINUED Device No 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JTX * 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048

Contextual Info: i l * ! E L E C T R O N I C S , IN C.\-15 COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No Case VCBO Volts 2N3920 2N4070 2N4071 2N4150 JAN 2N41S0 JT X * 2N4150 2N4301 2N4347 2N4348 2N5006 TO-3 TO-3 TO -3 TO-5 TO-5 120 120 200 100 100 60 100 150

2N5339

Abstract: 2N4150 2N5154 2n5339 data sheet 2C5154 2N3998 2N3999 2N4150S 2N5152 2N5152L
Contextual Info: Data Sheet No. 2C5154 Generic Packaged Parts: Chip Type 2C5154 Geometry 9201 Polarity NPN 2N4150, 2N51512, 2N5154, 2N5339 Chip type 2C5154 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for medium

2N4150

Contextual Info: 2N4150 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)

A23041

Abstract: 2N4150 Unitrode transistors data To5
Contextual Info: POWER TRANSISTORS JAN, JANTX & JANTXV 2N4150 10 Amp, 70V, Planar NPN FEATURES DESCRIPTION • • • • • Unitrode power transistors provide a unique com bination o f low saturation voltage, high gain and fast switching. They are ideally suited fo r power supply pulse

2n5237

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 DEVICES LEVELS 2N4150 2N4150S 2N5237 2N5237S 2N5238

2N4150S

Abstract: 2N4150SJ 2N4150SJV 2N4150SJX
Contextual Info: 2N4150S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150SJ

2N5237

Abstract: 2n52 1000C 2N4150 2N4150S 2N5237S 2N5238 2N5238S
Contextual Info: TECHNICAL DATA 2N4150, 2N4150S JAN, JTX, JTXV 2N5237, 2N5237S JAN, JTX, JTXV 2N5238, 2N5238S JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/394 NPN SILICON POWER TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

T3S600MPC

Abstract: TXN60B 2N3759 TAG 600 TMS007
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 SF5J42 5PSSM 5PSSMA SK3042 DRA5G S5BOOM TYFSOOBA 5PSM 5PSM CTOBG g~~~~12 15 20 25 30 35 40 CR5AS12 SF5J41 SF5J41 S2700M MCR729•B 2N415B 2N41SS 2N41B2 2N419B 2N4202 SOB02MH SOB05MH SOB07MH FOB10MH SOB10MH

IC IL 117

Abstract: 2N5011 2N5339A transistor sit TRANSISTOR 800h 2N5010 2N5012 2N5013 2N5152 2N5154
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 IC/ VCE min/max @ A/V PACKAGE DEVICE TYPE VcEO (sus) VOLTS Ic (max) AMPS NPN TO-39 2N4150A 70 5.0 40-120@5/5 .6@5/,5 2N5010 500h .5 30-180@.025/10 2N5011 600h .5 2N5012 700h 2N5013 ¡¡I NPN TO-5

2N3920

Abstract: 2N4070 2N4071 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048
Contextual Info: i l * ! E L E C T R O N I C S , IN C.\-15 COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No Case VCBO Volts 2N3920 2N4070 2N4071 2N4150 JAN 2N41S0 JT X * 2N4150 2N4301 2N4347 2N4348 2N5006 TO-3 TO-3 TO -3 TO-5 TO-5 120 120 200 100 100 60 100 150

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr Data S heet No. 2N 4150 o % #f 1 l $ I c I ^88888 id L S E M IC O N D U C T O R S G eneric Part Num ber: 2N4150 Type 2N4150 Geometry 9201 Polarity NPN Qual Level: JAN - JANTXV