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    2N4398 Search Results

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    2N4398 Price and Stock

    Microchip Technology Inc 2N4398

    PNP TRANSISTOR
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    Microchip Technology Inc 2N4398 1
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    NAC 2N4398 Tray 7
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    Master Electronics 2N4398
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    Central Semiconductor Corp 2N4398-PBFREE

    TRANS PNP 40V 30A TO3
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    DigiKey 2N4398-PBFREE Tube 160
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    Central Semiconductor Corp 2N4398 PBFREE

    2N4398 PBFREE
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    Verical 2N4398 PBFREE 100 20
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    NTE Electronics Inc 2N4398

    Transistor, Pnp, 100V, 30A, To-204Aa-2; Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:30A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. Of Pins:2Pins; Product Range:- Rohs Compliant: Yes |Nte Electronics 2N4398
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    New Jersey Semiconductor Products, Inc. 2N4398

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    Bristol Electronics 2N4398 10,234 1
    • 1 $13.62
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    2N4398 Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N4398 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 40V 30A TO-3 Original PDF
    2N4398 Central Semiconductor Leaded Power Transistor General Purpose Original PDF
    2N4398 On Semiconductor PNP Silicon High-Power Transistor Original PDF
    2N4398 Semelab Medium Power PNP Switching Transistor for Switching Applications Original PDF
    2N4398 API Electronics Transistor Selection Guide Scan PDF
    2N4398 API Electronics Short form transistor data Short Form PDF
    2N4398 Boca Semiconductor PNP SILICON HIGH-POWER TRANSISTORS Scan PDF
    2N4398 Diode Transistor Transistor Short Form Data Scan PDF
    2N4398 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N4398 General Transistor Power Transistor Selection Guide Scan PDF
    2N4398 Mospec POWER TRANSISTORS(200W) Scan PDF
    2N4398 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N4398 Motorola The European Selection Data Book 1976 Scan PDF
    2N4398 Motorola European Master Selection Guide 1986 Scan PDF
    2N4398 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N4398 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N4398 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N4398 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N4398 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4398 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2N4398 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    data sheet ic 4089 free download

    Abstract: ic 4089 free download 2N4398 200W AMPLIFIER
    Text: 2N4398 MECHANICAL DATA Dimensions in mm inches MEDIUM POWER PNP SWITCHING TRANSISTOR FOR SWITCHING APPLICATIONS 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . FEATURES 1 1 .4 3 (0 .4 5 0 )


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    PDF 2N4398 data sheet ic 4089 free download ic 4089 free download 2N4398 200W AMPLIFIER

    Untitled

    Abstract: No abstract text available
    Text: 2N4398 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N4398 O204AA) 31-Jul-02

    2N4398

    Abstract: 2N5745 4399 2N4399 2n5301
    Text: Inchange Semiconductor Product Specification 2N4398 2N4399 2N5745 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5301/5302/5303 ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching


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    PDF 2N4398 2N4399 2N5745 2N5301/5302/5303 2N4398 2N4399 2N5745 4399 2n5301

    2n4399

    Abstract: 2N4398
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PNP SILICON HIGH-POWER TRANSISTORS PNP 2N4398 2N4399 2N5745 General Purpose use In amplifier and switching applications. FEATURES: *DC Current Gain Specified-1.0 to 30 A


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    PDF 2N4398 2N4399 2N5745 2N4398, 2N5301 2N5302 2N5303 2n4399 2N4398

    2N5301

    Abstract: 2N5302 2N5303 2n53
    Text: SavantIC Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N4398/4399/5745 ·Low collector/saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in power amplifier and switching


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    PDF 2N5301 2N5302 2N5303 2N4398/4399/5745 2N5301 2N5302 2N5303 2n53

    2N4398 MOTOROLA

    Abstract: 2N4399 MOTOROLA 2N5745 motorola 300 watts amplifier Bipolar Junction Transistor 2N5301 2N4399 ic amplifier Motorola Bipolar Power Transistor Data npn transistors,pnp transistors
    Text: MOTOROLA Order this document by 2N4398/D SEMICONDUCTOR TECHNICAL DATA 2N4347 See 2N3442 PNP Silicon High-Power Transistors 2N4398 2N4399 2N5745 . . . designed for use in power amplifier and switching circuits. • Low Collector–Emitter Saturation Voltage —


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    PDF 2N4398/D* 2N4398/D 2N4398 MOTOROLA 2N4399 MOTOROLA 2N5745 motorola 300 watts amplifier Bipolar Junction Transistor 2N5301 2N4399 ic amplifier Motorola Bipolar Power Transistor Data npn transistors,pnp transistors

    Untitled

    Abstract: No abstract text available
    Text: 2N4398 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N4398 O204AA) 16-Jul-02

    2N5301

    Abstract: 2N5303 2N5302 53-02V 2N5302 data sheet 2N5302 inchange
    Text: Inchange Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N4398/4399/5745 ・Low collector/saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching


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    PDF 2N5301 2N5302 2N5303 2N4398/4399/5745 2N5302 2N5301 2N5303 53-02V 2N5302 data sheet 2N5302 inchange

    Untitled

    Abstract: No abstract text available
    Text: 2N4398 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N4398 O204AA) 18-Jun-02

    2n4399

    Abstract: No abstract text available
    Text: 2N4398 2N4399 2N5745 PNP SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4398 series types are PNP silicon power transistors designed for power amplifier and switching applications. MARKING: FULL PART NUMBER


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    PDF 2N4398 2N4399 2N5745

    2N4398

    Abstract: No abstract text available
    Text: TEXAS INSTR bE {OPTO} “Ô 9 6 T 7 2 6 TEXAS IN S T R D E | a^tlTHb 003bSò7 <O P T O 62C 36587 r - 3 î ' D l 3 2N4398,2N4399 P-N-P SILICON POWER TRANSISTORS RE V ISE D OCTO BER 19 84 • Designed for Complementary Use With 2N 5301, 2 N 5 3 0 2 • 2 0 0 W a t 25° C Case Temperature


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    PDF 003bS 2N4398 2N4399

    2N4398

    Abstract: 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050
    Text: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC INC D yZ-SS-TX 26C 0 0 2 3 8 ' Sb DE | OOMBSTS 3 C O L L E C T O R C U R R E N T = 3 0 A M PS P N P T Y P E S D e v ic e No C a se 2N4398 2N4399 2N6329 2N 6330 2N6331 A P1020 A P1021 A P1048 A P 1049 A P1050


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    PDF 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1124 AP1050

    2N3713

    Abstract: 2n3055 complement 2N5068 2N3055 2N3714 2N3789 2N3790
    Text: TRANSISTORS—POWER NPN TO—3 PACKAGE VOLTS *c AMPS MIN MAX 2N5067 40 5 20- 80 @ 1.0 1.5 @ 5 87.5 4.0 2N4901 2N4913 40 5 25 - 100 @ 2.5 1.5 @ 5 87.5 4.0 2N4904 2N5301 40 30 15- 60 @ 2.0 @ 20 2.0 2N4398 2N5068 60 5 20- 80 @ 15 1.0 1.5 @ 5 87.5 4.0 2N4902 2N4914


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    PDF 2N5067 2N4901 2N4904 2N4398 2N4902 2N4905 2N3789 2N3791 2N4399 2N4903 2N3713 2n3055 complement 2N5068 2N3055 2N3714 2N3790

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE PNP TO-3 DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247


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    PDF 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A

    AP1020

    Abstract: 2N4398 2N4399 2N6329 2N6330 2N6331 AP1021 AP1048 AP1049 AP1050
    Text: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC INC 26C 0 0 2 3 8 ' Sb D yZ-SS-TX DE | OOMBSTS 3 C O L L E C T O R C U R R E N T = 3 0 A M PS P N P T Y P E S D e v ic e No C a se 2N4398 2N4399 2N6329 2N 6330 2N6331 A P1020 A P1021 A P1048 A P 1049 A P1050


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    PDF 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1124 AP1050

    2N5302

    Abstract: No abstract text available
    Text: 7 15 * 15 37 OQg^S^ SGS-THOMSON [Mæ iCTiMO gS S 6 S - THOMSON 1 • 3 - ( £=> 2N5301/02/03 2N4398/99/5745 3GE D MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The 2N5301/2/3, are silicon epitaxial-base NPN transistors in Jedec TO-3 metal case. They are in­


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    PDF 2N5301/02/03 2N4398/99/5745 2N5301/2/3, 2N4398/99 2N5745 2N5301 2N5302 2N5745 2N5301/2/3-2N4398/99-2N5745 GQS1334

    1501-33

    Abstract: 2N5686 2N5860 2N5745 45020 2N5301 2N5303 2N5880 2N5881 2N5882
    Text: Typ#* PNP Compls- VCEUSIM lc mont Voltt) M u 2N5881 2N5882 2NS879 2NS880 2N5301 2NS302 2N5303 2N5885 2N5886 2N6326 2N6327 2N632B MJ802 MJ3771 MJ3772 2N4398 2N4399 2N5745 2N5883 2N5884 2H6329 2N6330 2N6331 2N5685 2N5686 MJ14000 MJ14002 2N5683 2N5684 MJ14001


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    PDF Tc-25Â 2N5881 2N5882 2NS879 2N5880 2N5301 2NS302 2N5303 2N5885 2N5886 1501-33 2N5686 2N5860 2N5745 45020

    2N4398

    Abstract: 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050
    Text: COLLECTOR CURRENT = 30 AMPS PNP TYPES Device No Case 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050 AP1063 AP1071 AP1095 AP1096 AP1113 TO -3 TO-3 TO-3 TO -3 TO-3 TO-3 TO-63 TO-63 TO-3 T O -63 TO-63 TO-3 TO-63 TO-3 TO 61/1 TO-63 TO-3


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    PDF 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050

    2N4398

    Abstract: 2N4399 2N4399 pnp 2N5745
    Text: 2N4398, 2N4399, 2NS745, PNP ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 200 mA, lB = 0 ) ^C E O (SU S ) 2N4398 2N4399 2N5745 Collector Cutoff Current


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    PDF 2N4398, 2N4399, 2NS745, 2N4398 2N4399 2N5745 2N4398 2N4399 2N4399 pnp 2N5745

    23741

    Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
    Text: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 JAN2N6437 JANTX2N6437 JANTXV2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967


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    PDF PNP-11 23741 PPC 2n5683 JANTX2N6379 JANTX2N6437

    2N4398

    Abstract: 2n4399 4398m
    Text: TYPES 2N4398, 2N4399 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS CD H F O R P O W ER -A M P LIFIER AND HIGH -SPEED -SW ITCHING A P P LIC A T IO N S D ES IG N ED FO R C O M P LE M EN T A R Y USE WITH 2N5301, 2N5302 c < r "D r m m H to • 200 Watts at 25° C Case Temperature


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    PDF 2N4398, 2N4399 2N5301, 2N5302 2N4398 4398m

    2N4398

    Abstract: 2N4399 2N4399 pnp 2N3252 2N5301 2N5302 silicon power transistors at 286 schematic
    Text: ~bE TE XA S I N S TR {O PT O } “Ô 9 6 T 7 2 6 T E X A S DE | a ^ t l T H b 0 0 3 b S ò 7 I N S T R <OPTO 62C 36587 r - 3 3 ' D 2 .3 2N4398,2N4399 P-N-P SILICON POWER TRANSISTORS REVISED OCTOBER 19 8 4 • Designed for Complementary Use W ith 2 N 5 3 0 1 , 2 N 5 3 0 2


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    PDF 36x726 2N4398 2N4399 2N5301, 2N5302 300/js, 2N4398; 2N4399- 2N4399 pnp 2N3252 2N5301 2N5302 silicon power transistors at 286 schematic

    2N4399

    Abstract: 2N4398 MOTOROLA 2N6745 2n4399 motorola 2N4398 2N4399 equivalent Motorola Bipolar Power Transistor Data 2n4399 2N5745 2N4398 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M M T 4»W 2N 3442 PNP S ilico n H ig h -P o w e r TVansistors 2N 4398 2N 4399 2N 5745 . . . designed for use in power amplifier and switching circuits. • • • Low Coilector-Emitter Saturation Voltage — IC = 15 Ade, VcE sat) = 1-0 Vdc (Max) 2N4398.99


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    PDF 2N4398 2N5745 2N5301, 2N5302, 2N5303 2N4399 2N4398 MOTOROLA 2N6745 2n4399 motorola 2N4399 equivalent Motorola Bipolar Power Transistor Data 2n4399 2N4398 equivalent

    2N5301

    Abstract: No abstract text available
    Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS 3 J CD H m C < < — r* m « in w FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 2N5301, 2N5302 DESIGNED FOR COMPLEMENTARY USE WITH 2N4398, 2N4399 I. g w S On 200 W at 25°C Case Temperature


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    PDF 2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2NS303) 2N5301