2N5154 Search Results

2N5002

Contextual Info: TYPES 2N5002, 2N5004. 2N5152, 2N5154 N-P-N SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TR AN SISTO RS W IT H CO M PUTER-D ESIG NED ISO TH ER M A L G EO M ETR Y 3 3 C B -4 mC< • For Complementary Use with 2N 5003, 2N 5005, 2N 51 51, and 2N 5153

2N5154L

Contextual Info: Data Sheet No. 2N5154L Generic Part Number: 2N5154L Type 2N5154L Geometry 9201 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/544 Features: • • • • Silicon power transistor for use in high speed switching applications. Housed in a TO-5 case.

2N5154SMD

Contextual Info: 2N5154SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed

2n6151

Abstract: 2N5005 2n5153 2N5004 2N5003 2N5151 2N5002 2N5152 2N5154
Contextual Info: TYPES 2N5003, 2N5005. 2N5151. 2N51S3 P-N-P SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY For Complementary Use With 2N5002, 2N5004, 2N5152, 2N5154 15 mJ Reverse Energy Rating with I q - 10 A and 4 V Reverse Bias

B205A

Abstract: 2n5152 2N5151 2N5154
Contextual Info: Datasheet central Vi ^ W l • — ■ 2N5151 2N5152 2N5153 2N5154 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS W *m Spwiirnwili iftfli1corn. 9^9■■ llvWI IUVvbwl WB pva 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824

2N5154

Abstract: 2N5152 MIL-PRF-19500 2N5154 2N5152L 2N5154L JANTXV2N5154
Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 Devices Qualified Level 2N5152 2N5152L JAN JANTX JANTXV 2N5154 2N5154L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

LE17

Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR 2N5154N2A • Hermetic Ceramic Surface Mount SMD1 Package • High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM PD TJ Tstg Collector – Base Voltage (IE = 0)

Contextual Info: 2N5154XSMD1-SQR-A MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCH 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 )

Contextual Info: 2N5152 2N5154 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCHES 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. DESCRIPTION 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. The 2N5152 and the 2N5154 are silicon

Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR 2N5154N2A • Hermetic Ceramic Surface Mount SMD1 Package • High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM PD TJ Tstg Collector – Base Voltage (IE = 0)

2N5154

Contextual Info: 2N5154 SILICON NPN TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N5154 is a silicon epitaxial planar NPN transistors in Jedec TO-39 metal case intended for use in switching applications. The complementary PNP type is the 2N5153. TO-39 INTERNAL SCHEMATIC DIAGRAM

Tl 5153

Abstract: 2N5003
Contextual Info: TYPES 2N5003. 2N 5005, 2N5151, 2N5153 P-N-P SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY ] 1 H mC < < r 2 «m W For Complementary Use With 2N5002, 2N5004, 2N5152, 2N5154 s p 15 mJ Reverse Energy Rating with I q = 10 A and 4 V Reverse Bias

2N5152

Contextual Info: • 7^537 0053331 7 ■ "T'3>3>-07 *57 SCS-THOMSON IILiCTB ISOOË S G S -T H 0 MS 0 N _ 2N 5152/2N 5154 30E » HIGH SPEED MEDIUM VOLTAGE SWITCHES DESCRIPTION The 2N5152 and 2N5154 are silicon epitaxial pla­ nar NPN transistors in Jedec TO-39 metal case in­

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr m o% #f 1 l 1 1 I c I ^88888 D a t a S h e e t No. 2 N 5 1 5 4 L $ id L SEMICONDUCTORS Type 2N5154L G eneric Part Num ber: 2N5154L Geometry 9201 Polarity NPN Qual Level: JA N -JA N S

520301006

Abstract: Table of smd IC marking codes smd transistor marking A2 TRANSISTOR SMD MARKING CODES ESCC 5203/010 2N5154S1 st smd diode marking code NV SMD TRANSISTOR smd diode order marking code stmicroelectronics smd marking codes list
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified

2N5153

Abstract: 2N5151 2N5152 2N5154
Contextual Info: 2N5152 2N5154 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCHES 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . DESCRIPTION 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 3 2 .5 4 (0 .1 0 0 )

TIP 22 transistor

Abstract: 2N5004 2N5002 2N5154 circuit 2N 3055 TRANSISTOR bd 147 Transistor Bd 140 tip 147 cw 2N5005 2N5152
Contextual Info: TYPES 2N5002, 2N5004, 2N5152, 2N5154 N-P-N SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TR A N S IS TO R S W IT H COM PU TER -D ESIG N ED IS O TH E R M A L G E O M E TR Y For Complementary Use with 2N 50 03, 2N 50 05, 2N 51 51, and 2N 51 53 15 mJ Reverse Energy Rating w ith lc = 10 A and 4 V Reverse Bias

Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet − production data Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics

Contextual Info: JANS 2N5152 and JANS 2N5154 Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152 and 2N5154 silicon transistor devices are military Radiation

Contextual Info: 2N5154XSMD MECHANICAL DATA Dimensions in mm inches 3 2 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 DESCRIPTION 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) SMD (TO-276AB) The 2N5154XSMD is a silicon expitaxial planar NPN transistors in a Ceramic Surface

Contextual Info: 2N5152 2N5154 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCHES 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. DESCRIPTION 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. The 2N5152 and the 2N5154 are silicon

Contextual Info: 2N5152SMD05 2N5154SMD05 MECHANICAL DATA Dimensions in mm inches NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 )

Contextual Info: 2N5154 Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA Corportion offers: • High-speed power switching • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5154J • JANTX level (2N5154JX)

2N5154

Contextual Info: 2N5152 2N5154 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCHES 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . DESCRIPTION 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 3 2 .5 4 (0 .1 0 0 )