2N5333 Search Results

2N5333

Contextual Info: 2N5333 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N5333 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N5333 Si PNP Power BJT 19.99 Transistors Bipolar Silicon PNP Powe. 1 of 1 Home Part Number: 2N5333 Online Store 2N5333 Diodes Si PNP Po w er BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

B178G

Abstract: 2N5333 KSH 200 TRANSISTOR Transistor ksh 200 2N4300 7S100
Contextual Info: 2N5333 2 AMP HIGH SPEED PNP TRANSISTOR 100 VOLTS CASE STYLE W JEDEC TO—5 L— 330—J \ .320 — 1 wmw 14830 Valley View Avenue La Mirada, California 90638 La Mirada, California 90637 213 921-9660 TW X 910-583-4807 FEATURES • • • • • • •

Contextual Info: na. 20 STERN AVEL SPRINQFIELD, NEW JERSEY 07081 2N5333 p.N.p S,l|CON p WER TELEPHONE: (»73) 378-2982 (M4 327-6008 FA*rt»73)376-8960 TRANS|STOR U.3A •i I I I ,-•' coi"c | —-. O I O O » > N _.j HI-DM.III o> mmiNi m-H °°°* .IHII lOM OfllOH.I

2n5333

Abstract: TRANSISTOR pnp 0.15W
Contextual Info: SILICON EPITAXIAL PLANAR PNP POWER TRANSISTOR 2N5333 • Low Saturation Voltage • Fast Switching • Hermetic TO39 Metal package. • For power amplifier and high speed Switching Applications • High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

2N5415

Contextual Info: T '3 !LA . 3 7E SEMELAB LTD Package VCEO cont 2N5154 2N5154S 2N5230 2N5321 PNP NPN NPN NPN NPN T039 T039 T039 T039 T039 80 80 80 75 50 5 5 5 2 2 70-200 70-200 70-200 30-120 40-250 5 5 5 4 4 2.5 2.5 2.5 0.5 0.5 70M 70M 70M 50M 50M 2N5322 2N5323 2N5333 2 N5336

transistor LT 5222

Abstract: transistor LT 5221 2N5333 lt 5217 LT 5219
Contextual Info: TYPE 2N5333 P-N-P EPITAXIAL PLANAR SILICON POWER TRANSISTOR F O R P O W E R -A M P L IF IE R A N D H IG H -S P E E D -S W IT C H IN G A P P L IC A T I O N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W IT H 2 N 4 3 0 0 • 15 W • M a x V CE|i0ll o f 0 .4 5 V a t 1 A l c

SDT69504

Abstract: 2N3740 2N3741 2N4387 2N4388 2N4999 2N5001 2N5147 2N5149 2N5333
Contextual Info: Device Type 2N3740 2N3741 2N4387 2N4388 2N4999 2N5001 2N5147 2N5149 2N5333 2N5597 SDT3501 SDT3502 SDT3503 SDT3504 SDT3505 SDT3506 SDT3507 SDT3508 SDT3509 SDT3510 SDT3511 SDT3512 SDT3513 SDT3514 SDT3515 SDT3516 SDT3550 SDT3551 SDT3552 SDT3553 SDT3554 SDF3575

2N5333

Contextual Info: 2N5333 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)

2N5286

Abstract: 2N540S 2N5867 2N5872 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905
Contextual Info: \ P I ELECTRONICS INC Eb DE | DÜMBSTS □□□□2Eb 7 |^T-3 3-Ot COLLECTOR CURRENT =5 AMPS PNP TYPES - CONTINUED Device No 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N4999 2N5001 2N5003 2N5005 2N5147 2N5149 2N5286 2N5287 2N5333

2n5333

Contextual Info: SILICON EPITAXIAL PLANAR PNP POWER TRANSISTOR 2N5333 • Low Saturation Voltage • Fast Switching • Hermetic TO39 Metal package. • For power amplifier and high speed Switching Applications • High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: P I ELECTRONICS INC Eb d F | □□MBS'iS OOOOSEb 7 |^*T-3 3-01 COLLECTOR CURRENT =5 AMPS PNP TYPES - CONTINUED Device No 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N4999 2N5001 2N5003 2N5005 2N5147 2N5149 2N5286 2N5287 2N5333

STD 357

Abstract: TD357 2N3634 microsemi
Contextual Info: Microsemi PNP Transistors •. Part Number JANTXV2N4033 2N5333 2N3467 JAN2N3467 JAN2N3467L JANTX2N3467 JANTX2N3467L JANTXV2N3467 JANTXV2N3467L 2N3468 ¡ JAN2N3468 JAN2N3468L JANTX2N3468 JANTX2N3468L JANTXV2N3468 JANTXV2N3468L 2N3634 2N3634L JAN2N3634 JAN2N3634L

2N5333

Contextual Info: Central TM Semiconductor Corp. 2N5333 PNP SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5333 is a PNP Silicon Power Transistor manufactured by the epitaxial planar process, mounted in a hermetically sealed metal case, designed for amplifier and switching applications.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N5189

Abstract: 2N4930 2N4931 2N4943 2N4960 2N5022 2N5023 2N5058 2N5059 2N5109
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) toff (ns) (dB) *TYP *TYP *TYP *TYP *TYP MAX *ICEO *ICES *ICEV

2n5863

Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
Contextual Info: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V

2N3775

Abstract: 2N3202 2N3203
Contextual Info: 8440355 SPACE POWER 89C ELECTRONICS SPACE POWER ELECTRONICS "fll 00105 D T- 3 3 -o/ DlF|fl44[ 3SS QDDD10S 3 Hi-Rel PLANAR POWER 5 W PUP FOR DETAILED S P E C I F I C A T I O N S C O N T A C T E N G I N E E R I N G Breakdown Voltages TYPE CASE V 2N3202 2N3203

2N5286

Abstract: 2N3171 2N3172 2N3196 2N3173 2N3174 2N3184 2N3183 2n5601 TO111 package
Contextual Info: u l i J E L E C T R O N I C S , INC. -13 COLLECTOR CURRENT = 5 AMPS PNP TYPES—Continued Device No 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N3185 2N318* 2N3187 2N3188 2N3189 2N3190 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204

BF357

Abstract: BF195 BF594 BF197 BF194 BF194 equivalent BF597 2N4996 BF195 equivalent BC516 equivalent
Contextual Info: Silect High Frequency Transistors TT MHz Sj o < Maximum Ratings Device Type hFE Case outline B V PTOT Ic VCE in brackets CBO ic V V mA mW min. max. mA V 1 10 BF594 (9) 30 20 30 250 65 220 Case Outlines BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38

JAN2N3996

Abstract: 2N4307 ISM22 2n3183
Contextual Info: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100

PDTC

Abstract: 2N5282 2N3795 2N3868 2N4999 2N5001 2N5005 2N5281 2N5333 SFT5333
Contextual Info: PNP TRANSISTORS h F E @ 1C Device Type V C E O sus Volts Min 1 120 150 2N3795 2N5281 80 2N4999 2 25 SFT5333 2N3868 50 20 1.0 2.0 2.5 60 2.5 2.5 60 70 30 30 15 15 50 50 100 100 6 50 25 50 50 50 TO-59 TO-59 TO-5 TO-5 TO-5 2N5003 30 2N5005 2M6190 70 30 2.0

SDT423

Contextual Info: _ 8 3686 02 SO LITRON D EV IC ES INC_ 95D 02758 SOLITRON DEVICES INC T5 D — T"“- 3 3 - 0 / Ïm F | ù3bflbD2 00D57SA S | T i - t^WÊÊÊFBlË • P L A N A R P O W ER TR A N S IS TO R S % 5m O < M M DEVICE TYPE hpE MIN/MAX @ ic A