2N5551 Search Results

2N5551

Contextual Info: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage

Contextual Info: Transistor IC Transistors DIP SMDType Type SMD Type Product specification 2N5551 Features Switching and amplification in high voltage Applications such as telephony Low current max. 600mA High voltage(max.180V) Absolute Maximum Ratings Ta = 25 Parameter Symbol

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES * High collector-emitter voltage: VCEO=160V * High current gain  APPLICATIONS * Telephone switching circuit * Amplifier  ORDERING INFORMATION

2N5551 circuit

Abstract: 2N5550 2N5551 2N555 1N914
Contextual Info: ON Semiconductort 2N5550 2N5551* Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage

2N5551B

Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50

transistor 2n5551

Abstract: 2N5551
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551 TO- 92 CBE Boca Semiconductor Corp. BSC High Voltage NPN Transistor For General Purpose And Telephony Applications.

transistor 2N5401

Abstract: 2N5401 2N5551 CMLT5554
Contextual Info: CMLT5554 SURFACE MOUNT DUAL,COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR CMLT5554 consists of one 2N5551 NPN silicon transistor and one individual isolated complementary 2N5401 PNP silicon transistor, manufactured by the epitaxial planar process

2N5551

Contextual Info: 2N5551 NPN Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO IC Total Device Dissipation TA=25 C PD

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR E 2N5551 TO- 92 CBE BC High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5551 Features • NPN General Purpose Amplifier Transistor This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5551 Features • • • NPN General Purpose Amplifier Transistor This device is designed for general purpose high voltage amplifiers

2N5551

Contextual Info: 2N5551 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :0.6 A Collector-base voltage V (BR)CBO :180 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TO – 92 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

Contextual Info: 2N5551 NPN Plastic-Encapsulate Transistors 2 TO-92 Features •Switching and amplification in high voltage Applications such as telephony · Low current max. 600mA · High voltage(max.180v) 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Contextual Info: 2N5551 NPN Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO IC Total Device Dissipation TA=25 C

2N5401

Abstract: transistor 2N5401 2N5400 2N5550 2N5551 st2n5401
Contextual Info: ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.

2N5551C

Abstract: SAT12
Contextual Info: KEC SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. 2N5551C EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage. : VCbo=180V, VCeo=160V • Low Leakage Current. : I CB O = 5 0 n A Max. V Cb=120V

2N5551L

Abstract: 2N5551L-x-AB3-R 2N5551 circuit 2N5551 2N5551 transistor 2N5551-NPN Transistor TO-92 2N5551 2N5551 TO92 high voltage npn transistor SOT-89 2N5551 UTC
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS 1 * Telephone switching circuit TO-92 * Amplifier *Pb-free plating product number: 2N5551L

2N5401

Contextual Info: 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5551 Features • • • • NPN General Purpose Amplifier Transistor This device is designed for general purpose high voltage amplifiers

2N5551 SOT23

Abstract: 2N5551 2N5551CSM
Contextual Info: 2N5551CSM HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 3 2 • HERMETIC CERAMIC SURFACE MOUNT

Contextual Info: SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES 1999. 11. 30 Revision No : 2 1/2