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    2N5630 Search Results

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    2N5630 Price and Stock

    Microchip Technology Inc 2N5630

    POWER BJT
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    DigiKey 2N5630 Bulk 100
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    • 100 $64.2504
    • 1000 $64.2504
    • 10000 $64.2504
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    Avnet Americas 2N5630 Bulk 36 Weeks 100
    • 1 $69.19
    • 10 $69.19
    • 100 $64.25
    • 1000 $61.78
    • 10000 $61.78
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    Newark 2N5630 Bulk 100
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    • 100 $64.25
    • 1000 $61.78
    • 10000 $61.78
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    Future Electronics 2N5630 100
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    • 100 $68.64
    • 1000 $68.64
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    NAC 2N5630 5
    • 1 $70.6
    • 10 $70.6
    • 100 $65.03
    • 1000 $60.27
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    Solitron Devices Inc 2N5630

    TRANSISTOR,BJT,NPN,120V V(BR)CEO,16A I(C),TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5630 1
    • 1 $11.85
    • 10 $7.9
    • 100 $7.9
    • 1000 $7.9
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    New England Semiconductor 2N5630

    TRANSISTOR,BJT,NPN,120V V(BR)CEO,16A I(C),TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5630 1
    • 1 $23.6352
    • 10 $23.6352
    • 100 $23.6352
    • 1000 $23.6352
    • 10000 $23.6352
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    2N5630 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5630 Central Semiconductor COMPLEMENTARY SILICON POWER TRANSISTOR Original PDF
    2N5630 Motorola Collector-emitter/base voltage: 120Vdc 16 Amp high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=16 / Hfe=20/80 / fT(Hz)=1M / Pwr(W)=200 Original PDF
    2N5630 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=16 / Hfe=20/80 / fT(Hz)=1M / Pwr(W)=200 Original PDF
    2N5630 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5630 API Electronics Short form transistor data Short Form PDF
    2N5630 Diode Transistor Silicon Transistors Scan PDF
    2N5630 Diode Transistor Silicon Transistors Scan PDF
    2N5630 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5630 General Electric Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=16 / Hfe=20/80 / fT(Hz)=1M / Pwr(W)=200 Scan PDF
    2N5630 Motorola The European Selection Data Book 1976 Scan PDF
    2N5630 Motorola European Master Selection Guide 1986 Scan PDF
    2N5630 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5630 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5630 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5630 Unknown Silicon NPN Transistor Scan PDF
    2N5630 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5630 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5630 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N5630 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5630 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2N5630 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6030

    Abstract: 2N6029 2N5629 2N5630
    Text: Inchange Semiconductor Product Specification 2N6029 2N6030 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5629 2N5630 ・High power dissipations APPLICATIONS ・For high voltage and high power amplifier applications


    Original     		PDF 2N6029 2N6030 2N5629 2N5630 2N6029 2N6030 2N5630

    2N5629

    Abstract: 2N5630 2N6029 2N6030
    Text: Inchange Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6029 2N6030 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base


    Original     		PDF 2N5629 2N5630 2N6029 2N6030 2N5629 2N5630 2N6030

    Untitled

    Abstract: No abstract text available
    Text: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5629 2N5630 NPN 2N60Z9 2N6030 PNP COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO-3 CASE MAXIMUM RATINGS (TC=25°C unless otherwise noted)


    Original     		PDF 2N5629 2N5630 2N60Z9 2N6030 2N5630 2N6030 2N5629 2N6Q29

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    Motorola transistor 388 TO-204AA

    Abstract: 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —


    Original     		PDF 2N6030 2N6031 2N5630) 2N6035, 2N6038 2N6036, 2N6039 225AA 2N6035 2N6036* Motorola transistor 388 TO-204AA 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214

    2N6031 MOTOROLA

    Abstract: 2N5630 2N5629 MOTOROLA MOTOROLA 2N6031 2n6029 2N6031 2N5629 MOTOROLA 2N5631 2N5631 2N6030
    Text: MOTOROLA Order this document by 2N5630/D SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		PDF 2N5630/D 2N5630 2N5631 2N6030 2N5630, 2N5631, 2N6031 2N6031 MOTOROLA 2N5630 2N5629 MOTOROLA MOTOROLA 2N6031 2n6029 2N6031 2N5629 MOTOROLA 2N5631 2N5631 2N6030

    2N5629

    Abstract: 2N5630 2N6029 2N6030
    Text: Product Specification www.jmnic.com 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6029 2N6030 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter


    Original     		PDF 2N5629 2N5630 2N6029 2N6030 2N5629 2N5630 2N6030

    2N5630

    Abstract: 2N5629 2N6029 2N6030
    Text: SavantIC Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N6029 2N6030 APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base


    Original     		PDF 2N5629 2N5630 2N6029 2N6030 2N5629 2N5630 2N6030

    2n6029

    Abstract: 2N5630
    Text: 2N5629 2N5630 2N6029 2N6030 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base


    Original     		PDF 2N5629 2N5630 2N6029 2N6030 2N5629, 2N6029 2N6029) 2N5630, 2N6030) 500kHz 2N5630

    TO-225AA

    Abstract: 2n6039 motorola 10 amp npn darlington power transistors Darlington Silicon Power Transistor darlington power transistor NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2N5630 2N6030 2N6031
    Text: MOTOROLA Order this document by 2N6035/D SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications.


    Original     		PDF 2N6035/D 2N6030 2N6031 2N5630) 2N6035 2N6035, 2N6038 2N6036, 2N6039 225AA TO-225AA 2n6039 motorola 10 amp npn darlington power transistors Darlington Silicon Power Transistor darlington power transistor NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2N5630 2N6031

    30G140

    Abstract: 2SC2922 SANKEN LS2025 2SC3241 2N5629 MOTOROLA MRF454 motorola MRF435 40363 MJ15026 2SC2608
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N6359 B0315 MJE4340 MJE4340 B0317 PTC173 2N5629 2N6302 ~j~:~:~ 25 30 MJ6302 2N5630 BOY77 BOY77 BOY37 2N3773 BOY37A BOY37A ~j~:~:~ 35 40 MJ3773 MJ3773 MJ3773 2N5631 2S0873 BOX50 BOX50 TRW6259 ~~~~~~3


    Original     		PDF OT-121var BUV26 STIPL757 TIPL757 STIPL757A 2SC2782 2SC2694 MRF247 30G140 2SC2922 SANKEN LS2025 2SC3241 2N5629 MOTOROLA MRF454 motorola MRF435 40363 MJ15026 2SC2608

    Untitled

    Abstract: No abstract text available
    Text: 2N5630 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5630 O204AA) 16-Jul-02

    2N5630

    Abstract: No abstract text available
    Text: 2N5630 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5630 O204AA) 31-Jul-02 2N5630

    2N6030

    Abstract: 2N6029 2N5629 2N5630
    Text: SavantIC Semiconductor Product Specification 2N6029 2N6030 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N5629 2N5630 ·High power dissipations APPLICATIONS ·For high voltage and high power amplifier applications PINNING


    Original     		PDF 2N6029 2N6030 2N5629 2N5630 2N6029 2N6030 2N5630

    2N5631

    Abstract: 2n6031 2N5629 2n6030 2n5630
    Text: ON Semiconductort NPN High-Voltage Ċ High Power Transistors 2N5630 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. PNP 2N5631 2N6030 • High Collector Emitter Sustaining Voltage — • •


    Original     		PDF 2N5630 2N5631 2N6030 2N6031 2N5630, 2N6030 2N5631, 2N6031 2N5629

    2N5629

    Abstract: 2NS63 2N631 92CS-30I4
    Text: File Number 1141 2N5629, 2N5630, 2N5631 7 ^ 3 3 - HARR IS S E M I C O N D SE CT OR SbE D & 43G E E7 1 0 0 4 ü 4 b 3 flOö • I H AS TERMINAL DESIGNATIONS Silicon N-P-N Epitaxial-Base High-Power Transistors Rugged, Broadly Applicable Devices For Industrial and Commercial Use


    OCR Scan     		PDF 2N5629, 2N5630, 2N5631 92CS-ZF516 O-204AA T0-204AA 2-l/l01c 2N5629 2NS63 2N631 92CS-30I4

    transistor 2n6038

    Abstract: 2N6039
    Text: MOTOROLA Order this document by 2N6035/D SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 P lastic Darlington C om plem entary Silicon Pow er Transistors PNP 2N 60 35 . . . designed for general-purpose amplifier and low -speed switching applications.


    OCR Scan     		PDF 2N6035/D 2N6035, 2N6038 2N6036, 2N6039 -225A 2N6030 2N6031 2N5630) 2N6035 transistor 2n6038

    2n5631

    Abstract: 2N5629 2NS631
    Text: File N um ber 2N5629, 2N5630, 2N5631 1141 TERMINAL DESIGNATIONS Silicon N-P-N Epitaxial-Base High-Power Transistors Rugged, Broadly Applicable Devices For Industrial and Commercial Use Feature*: • H ig h d is s ip a tio n c a p a b ility ■ L o w s a tu ra tio n voltages


    OCR Scan     		PDF 2N5629, 2N5630, 2N5631 92CS-27516 O-204AA 2NS630 2NS631 2n5631 2N5629

    2N5130

    Abstract: 2N5629 2N5630 2N5631
    Text: Qï 3875081 G E SOLID STATE D T W B â T S Ï Ï â ï T G Ï Ï V ? 3^ 3 ” 01E 17393 I D General-Purpose Power Transistors File N u m b e r 1141 2N5629, 2N5630, 2N5631 TERM INAL DESIGNATIONS


    OCR Scan     		PDF 2N5629, 2N5630, 2N5631 cs-i79i6 O-204AA RCA-2N5629, 2N5630 2N5631 3fl750fll DD173TS 2N5130 2N5629

    2N5629 MOTOROLA

    Abstract: 2N5629 2n6029 2N6030 2N6031
    Text: M O T O R O LA SC XSTRS/R F 1SE D | b3b?aSM MOTOROLA SEMICONDUCTOR TECHNICAL DATA GGÔMSSG □ | r - 33-/0 NPN PNP 2N5629 2N5630 2N5631 2N6029 2N6030 2N6031 HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE . . . designed fo r use in high pow er audio am p lifie r applications and


    OCR Scan     		PDF 2N5629 2N5630 2N5631 2N6029 2N6030 2N6031 2N6029, 2N6030, b3t72SM 2N5629 MOTOROLA 2N6031

    92CS-30I4

    Abstract: 2N5629 2N5630 92CS-3 42CQ RCA-2N5629 2n5631 rca
    Text: Qï 3875081 G E SOLID STATE B T fB F T S D â ir Ô Q V m r i- ” 01E 17393 D General-Purpose Power Transistors File N um ber 1141 2N5629, 2N5630, 2N5631 TERMINAL DESIGNATIONS Silicon N-P-N


    OCR Scan     		PDF 2N5629, 2N5630, 2N5631 O-204AA RCA-2N5629, 2N5630 2N5631 92CS-30I48 92CS-30I5I 92CS-30I4 2N5629 92CS-3 42CQ RCA-2N5629 2n5631 rca

    2N5630

    Abstract: 2n603 2N6031
    Text: MOTOROLA Order this document by 2N5630/D SEMICONDUCTOR TECHNICAL DATA NPN 2 N 5 6 30 H igh-V oltage — High Power Transistors 2N5631 PNP . . . designed for use in high power audio am plifier applications and high voltage switching regulator circuits. 2 N 6 0 30


    OCR Scan     		PDF 2N5630/D 2N5630, 2N6030 2N6031 2N5631 2N6031 O-204AA 2N5630 2n603

    J377

    Abstract: 2N4211 to63 J3772 2N3237 2N3598 2N3599 2N3773 2N5631 2N6259
    Text: DIODE TRANSISTOR CO INC fl4 DE | 2fl4ñ35S 0000130 3 TJ~ö D1QEE TR<aHI5J5TQR CD., INC. (201 686-0400 »Telex: 139-385 • Outside NY & NJ area call T O LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE V CEO Max(V) Mln/Max 2N3773 2N5629 2N5630


    OCR Scan     		PDF Q00013A DlQDETft4l\l515TDRCQ 2N3773 N5629 N5630 2N5631 2N6259 2N6359 2N3237 N3597 J377 2N4211 to63 J3772 2N3598 2N3599

    2N424

    Abstract: 2N1722 2N389 to-53 2N389A 2N5067 2N5068 2N5630 2N5631 2N5632
    Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2


    OCR Scan     		PDF 2N5067 2N5068 N5069 N5629 2N5630 2N5631 2N5632 2N5633 2N5634 TWX-510-224-6582 2N424 2N1722 2N389 to-53 2N389A