2N6497 Search Results

1N5825

Abstract: 2N6497 MSD6100
Contextual Info: ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line–operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS

2N6497

Abstract: 2N6499 2N6498
Contextual Info: 2N6497,2N6498,2N6499 NPN ACTIVE-REGION SAFE OPERATING AREA SOA Ic , COLLECTOR CURRENT (Am p) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic- V ce

Contextual Info: £ Z T SGS-THOMSON ^7# 2N6497 2N6498-2N6499 HIGH VOLTAGE POWER SWITCH DESCRIPTIO N The 2N6497/98/99 are silicon multiepitaxial mesa NPN transistors in Jedec TO-220 plastic package particularly intended for switch-mode applications. ABSOLUTE MAXIMUM RATINGS

LB 137 transistor

Contextual Info: 2N6497 SILICON NPN POWER TRANSISTOR PACKAGE STYLE TO - 220AB DESCRIPTION: DIMENSIONS The 2N6497 is Designed for High Voltage, High Speed, Power Switching Applications. mm min MAXIMUM RATINGS 5.O A 1O A PEAK le |b 2.O A VeE 25O V Pd i s s Tj 8O W @ Te " 25 0C

25A1075

Abstract: 2N6497 2N6498 2N6499
Contextual Info: 2N6497 2N6498 2N6499 cen trai Central semiconductor Corp. Central semiconductor Corp. ♦I NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE 1 4 5 A dam s Avenue Hauppauge, New Y ork 11 7 8 8 DESCRIPTION The CENTRAL SEM ICONDUCTOR 2N 6497, 2N6498, 2N 6499 types are Silicon NPN Power Transistors

2N6530

Abstract: MJE700T
Contextual Info: Power Transistors TO-220 Case Continued TY P f NO, 1C m MW PNP PD m MAX BVépo BVCtO m VCE(SAT) @ 1C h re (A) m m m MB MAX (V) (A) fT (MHz) Iflffcl mnf MAX 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499 5.0

Contextual Info: 2N6497 High Voltage NPN Silicon Power Transistors These devices are designed for high voltage inverters, switching regulators and line−operated amplifier applications. Especially well suited for switching power supply applications. http://onsemi.com Features

Contextual Info: 2N6497 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)350 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition)350 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.5

2N6497

Contextual Info: SavantIC Semiconductor Product Specification 2N6497 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High breakdown voltage APPLICATIONS ·Designed for high voltage inverters, switching regulators and line operated amplifier applications

Contextual Info: Power Transistors TO-220 Case Continued TYPE NO. NPN PNP ic PD (A) (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499

1N5825

Abstract: 2N6497 MSD6100
Contextual Info: ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line−operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS

Contextual Info: 2N6497 2N6498 2N6499 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6497, 2N6498, and 2N6499 are silicon NPN power transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER

MJE13009

Abstract: MJE-13009 D44C11 Data MJE700T BU406 bu406d BU407D mje13007 mje13009 equivalent MJE800T equivalent
Contextual Info: TO-220 Power Transistors TO-220 Case Continued TO-220FP Full Pak • Fully Isolated Standard TYPE NO. Optional IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6497 5.0 80 350 250 10 2N6498 5.0 80 400 300 10 2N6499 5.0 80 450 350 10 75 2.5 2N6530

Contextual Info: QQgcm P5 s • H ~ - 3 3 - \ 3 r z 7 ^ 7 S C S -TH H O O M M S O N s [ L ir a » ! ! # S 6 S-THOMSON 2N 6497 2 N 6 4 9 8 -2 N 6 4 9 9 30E T> HIGH VOLTAGE POWER SWITCH DESCRIPTION The 2N6497/98/99 are silicon multiepitaxial mesa NPN transistors in Jedec TO-220 plastic package

2N6497 D

Abstract: 10 amp npn power transistors AMP contact assembly 2N6497 1N5825 2N6497G MSD6100
Contextual Info: 2N6497 High Voltage NPN Silicon Power Transistors These devices are designed for high voltage inverters, switching regulators and line−operated amplifier applications. Especially well suited for switching power supply applications. http://onsemi.com Features

2N6497

Abstract: N6497 2N6498 2N6499
Contextual Info: HIGH VOLTAGE NPN SILICON POWER TRANSISTORS NPN 2N6497 2N6498 2N6499 . designed for high voltage inverters,switching regulators and line operated amplifier applications. Boca Semiconductor Corp. BSC FEATURES: * Collector-Emitter Sustaining VoltageVCE0(SUS) = 250 V (Min)-2N6497

1N5825

Abstract: 2N6497 MSD6100
Contextual Info: ON Semiconductort High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line–operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors 'Motorola Proftrrtd Dovtc* 5 AM PERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line-operated

2SA1046

Abstract: BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line–operated

2N649

Contextual Info: MOTOROLA Order this document by 2N6497/D SEMICONDUCTOR TECHNICAL DATA 2N6497 2N 6498* High Voltage NPN Silicon Power Transistors ‘ Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, sw itching regulators and lin e -o p e ra te d

2N6531B

Abstract: 2N660 2N6587 2N6558S 2N6584
Contextual Info: r S E ME L AB 37E LTD IVIELABil Type No. 2N6497 2N6498 2N6499 2N6500 • 2N6511 2N6512 2N6513 2N6514 2N6531B 2N6532 op tion "1^ Polarlty HI-REL SCREEN SCREEN SCREEN SCREEN NPN NPN NPN NPN NPN Packa3e VCEO •c cont J> m V' 'Xg. - 6133167 □ □ 0 D D E ci 4

2N6497

Abstract: SAT Line Amplifier transistor 2N6497 300V transistor npn 2a 2N6498 2N6499
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6497/6498/6499 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 ·DC Current Gain: hFE= 10-75@IC= 2.5A

Contextual Info: ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line−operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS

Contextual Info: m 2N6497 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6497 is Designed for High Voltage, High Speed, Power Switching Applications. MAXIMUM RATINGS 5.0 A 10 A PEAK 2.0 A lc Ib 250 V V ce 80 W @ Tc = 25 °C Tj -65 °C t o +150 °C T stg -65 °C t o +150 °C