Contextual Info: HARRIS SEMICOND SECTOR 5ÖE D iU HARRIS W SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL430 D, R, H • 43D2271 004S 7GD ^23 « H A S 2N7281D, 2N7281R 2N7281H Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 2A, 500V, RDS(on) - 2.500

PA6015A

Abstract: 2n2570 KT3101A-2 BF250 SG119 2N1269 2SC1071 2S078 LOW-POWER SILICON NPN PA6015
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 2Nl199A 2N770 2N770 2N3511 2N918 2N1268 2N1271 2N1139 2N728 FMMT2369 2N2~t U 15 20 2N1006 2Nl199 PN5131 PN5131 PN5131 2N476 2N1417 2N1663 2N5131 ~~~~~ 25 30 2N771 MPS5131 MPS5131 AST5220 2N5220 BF250 04024 A5T5219

Contextual Info: h a r ^ s S E M I C O N D U C T O R 2N7288D, 2N7288R 2I^72ÔÔH REGISTRATION PENDING Available as FRS244 D, R, H November 1994 . R a d iatio n H a rd e n e d N -C h a n n e l P o w e r M O S F E T s Features Package

Contextual Info: H a rris 2N7285D, 2N7285R SEMICONDUCTOR 2 REGISTRATION PENDING Currently Available as FRM240 D, R, H November 1994 t^ 7 2 Ô 5 H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 16A, 200V, RDS(on) = 0 .2 4 Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM244 D, R, H November 1994 2N7287D, 2N7287R 2N7287H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 12A, 250V, RDS(on) = 0.400Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL430 D, R, H November 1994 2N7281D, 2N7281R 2N7281H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 2A, 500V, RDS(on) = 2.50ft TO-205AF • Second Generation Rad Hard MOSFET Results From New Design C oncepts

Contextual Info: 2N7286R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D)7 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ

Contextual Info: HARRIS SEHICOND SECTOR SflE » HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM440 D, R, H • 4302271 0Ü4S720 711 H H A S 2N7289D, 2N7289H 2N7289H Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 6A, 500V, RDS(on) = 1.40Q

Contextual Info: m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS140 D, R, H 2N7284D, 2N7284R 2N7284H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 17A, 100V, RDS(on) » 0.1450 TO-257AA • Second Generation Rad Hard MOSFET Result« From New Design Concepts

Contextual Info: o HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM240 D, R, H 2N7285D, 2N7285R 2N7285H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 16A, MOV, RDS(on) = 0.240 TO-204AA • Second Generation Rad Hard MOSFET Result* From New Design Concept«

12A200

Contextual Info: HARRI S SE IU C O N D a SECTO R bflE D H A R R is • 430 227 1 0 Q S 1 2D 3 3 1.7 ■ 2N7286D, 2N7286R SEMIC ON DU C TO R 9 REGISTRATION PENDING Currently Available as FRS240 D, R, H A / 7 9 A A M Ä l ¥ / Ä C / l / n Radiation Hardened N-Channel Power MOSFETs

2n728

Contextual Info: HARRIS SEMICOND SECTOR 33 HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM244 D, R, H SÔE » • M3G2271 DG4S715 354 ■ 2N7287D, 2N/2Ö/H 2N7287H December 1992 Radiation Hardened N-Channel Power MOSFETs Package Features 12A, 250V, RDS{on) • 0.400(1

Contextual Info: m a r r is 2N7282D, 2N7282R 21^72Ö2'H S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS430 D, R, H Radiation Hardened N-Channel Power MOSFETs November 1994 Package Features • 3A, 500V, RDS(on) = 2.52ft TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: SKI Harris S E M I C O N D U C T O R 2N7281D, 2N7281R 2N72S1H REGISTRATION PENDING Currently Available as FRL430 D, R, H u -i -j Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 2A, 500V, RDS(on) = 2.501} TQ-205AF • Second Generation Rad Hard MOSFET Result« From New Design Concepts

Contextual Info: m a r r is 2N7280D, 2N7280R S E M I C O N D U C T O R 2 REGISTRATION PENDING Currently Available as FRM430 D, R, H November 1994 1 ^ 7 2 R a d iatio n H a rd e n e d N -C h a n n e l P o w e r M O S FE Ts Package Features • 3A, 500V, RDS(on) = 2.50ft TO-204AA

Contextual Info: m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS430 D, R, H 2N7282D, 2N7282R 2N7282H Radiation Hardened N-Channel Power MOSFETs Decem ber 1992 Package Features • 3A, 500V, RDS(on) = 2.52H TO-257AA • Second Generation Rad Hard MOSFET Result« From New Design Concepts

Contextual Info: HARRIS SEMICOND SECTOR bSE D fSî HARFRis uu semiconductor • M3Q5S71 □ □ 4 C1DS1 bêfi * H A S 2N7280D, 2N7280R 2N7280H REGISTRATION PENDING Currently Available as FRM430 D, R, H u -i Radiation Hardened N-Channel Power MOSFETs June1993 Package Features

H30E2

Abstract: H30E271
Contextual Info: ’ HARRIS SEniCOND SECTOR H A R R bSE ]> IS S E M IC O N D U C T O R REGISTRATION PENDING Currently Available as FRS430 D, R, H • H3QE271 QDMTClSb IbT « H A S 2N7282D, 2N7282R 2N7282H Radiation Hardened N-Channel Power MOSFETs June 1993 Package Features

Contextual Info: m HARRIS SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRS244 D, R, H 2N7288D, 2N7288R 2N7288H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 9A, 250V, RDS(on) = 0.41511 TO-257AA • Second Generation Rad Hard MOSFET Result* From New Design Concepts

250L harris

Contextual Info: m UU HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM430 D, R, H 2N7280D, 2N7280R 2N7280H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 3A, 500V, RDS(on) = 2-50£l TO-204AA * Second Generation Rad Hard MOSFET Result* From New Design Concepts

transistor 257A

Abstract: mosfet 257A
Contextual Info: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS240 D, R, H 2N7286D, 2N7286R 2N7286H Radiation Hardened N-Channel Power MOSFETs November 1994 Package Features • 12A, 200V, RDS(on) = 0.255ft TO-257A A • Second Generation Rad Hard MOSFET Results From New Design Concepts

006U

Contextual Info: iü i H a r r i s u y S E M IC O N D U C T O R 2N7289D, 2N7289R 2N72S9H REGISTRATION PENDING Currently Available as FRM440 D, R, H . Radiation Hardened N-Channel Power MOSFETs Decem ber 1992 Package Features • 6A, 500V, RDS(on) = 1.40il TO-2Q4AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

0255Q

Contextual Info: H A R R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS240 D, R, H 2N7286D, 2N7286R 2N7286H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 12A.200V, RDS(on) = 0.255Q TO-257AA • Second Generation Rad Hard MOSFET Result*'From New Design Concepts

Contextual Info: m a r r is 2N7283D, 2N7283R S E M I C O N D U C T O R 2 REGISTRATION PENDING Currently Available as FRM140 D, R, H November 1994 1 ^ 7 2 3 H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 23A, 100V, RDS(on) = 0.130Q