2SA17 Search Results

2sa1793

Abstract: 2sc4657
Contextual Info: 2SA1793 SILICON PNP EPITAXIAL TYPE Unit in mm HIGH CURRENT SW ITCHING APPLICATIONS. • • • • Excellent hpE Linearity : hpE 120~400 at V c e = —IV, l£ = —1A Low Collector Saturation Voltage : v CE sat = -0.4V(M ax.) at I c = -3 A , Ib = -0.15A High Power Dissipation : PQ = 1.3W(Ta = 25°C)

2SA1792

Contextual Info: 2SA1792 SILICON PNP EPITAXIAL TYPE U nit in mm STOROBE FLASH APPLICATIONS. M E D IU M PO W ER AM PLIFIER APPLICATIONS. • • • 7.2MAX 3.0 £3: Excellent hjrE Linearity : hpE = 100~320 Vç e = —2V, I q = - 1A Low Saturation Voltage : V çE(sat)= —0.5V (Max.) at I q = —8A

2SA1757

Abstract: PNP 100V 2A
Contextual Info: INCHANGE Semiconductor Product Specification 2SA1757 Silicon PNP Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·High Switching Speed ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) ·Wide Area of Safe Operation

2SA1726

Abstract: 2SC4512
Contextual Info: Inchange Semiconductor Product Specification 2SC4512 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SA1726 APPLICATIONS ・Audio and General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SA1774

Contextual Info: 2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK Datasheet PNP -150mA -50V General Purpose Transistors Outline Parameter Value VCEO IC 50V 150mA VMT3 EMT3F Collector Collector Base Base Emitter Emitter 2SA2029 SC-105AA Features

2SC4512

Abstract: 2SA1726
Contextual Info: JMnic Product Specification 2SA1726 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SC4512 APPLICATIONS ・Audio and General Purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base

2SA1741

Contextual Info: JMnic Product Specification 2SA1741 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Low collector saturation voltage APPLICATIONS ・For use as a driver in DC/DC converters and actuators PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter

Contextual Info: 2SA1735 SILICON PNP EPITAXIAL T Y P E Unit in mm 4.6MAX . ] 7MAX. » POWER AMPLIFIER APPLICATIONS » POWER SWITCHING APPLICAGIONS Low Saturation Voltage : VcE sat =-0.5V(Max.) (Ic=-500mA) High Speed Switching Time: tstg=0. 2 5 |J S (Typ.) Small Flat Package

Transistor B C 458

Abstract: c458 2sa1766
Contextual Info: O rd e rin g n u m b e r: EN 3182B N 0.3182B 2SA1766 P N P Epitaxial P lan ar Silicon Transistor High hpE, Low-Frequency General-Purpose Amp Applications F e a tu r e s . A doptionofFB E T , MBIT processes . H igh DC cu rren t gain hpE = 500 to 1200 . Large cu rren t capacity

silicon pnp transistor

Contextual Info: O rd e rin g n u m b e r: EN 3180B NO.3180B // 2SA1764 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features - F ast switching speed •Low collector saturation voltage ■High gain-bandwidth product • Small collector capacitance

2SA1746

Contextual Info: AOK Product Specification AOK Semiconductor 2SA1746 S ilicon PNP Power Transistors DESCRIPTION • With TO -3PM L packagc • Low collector saturation voltage APPLICATIONS I • For chopper regulator.switch and 9 P general purpose applications 1 Ü 1 if ?

2SC4645

Abstract: 2SA1785
Contextual Info: Ordering number: E N 351ÎA SANYO N 0 .3 5 1 1 A I 2SA1785/2SC4645 2SA1785.PNP Epitaxial Planar Silicon Transistor 2SC4645:NPN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications Features • Large current capacity Ic= 1A • High breakdown voltage (Vce O—400V)

Contextual Info: General Purpose Transistor 50V, 0.15A 2SA1774EB Applications General purpose small signal amplifier. Dimensions (Unit : mm) EMT3F Features 1) Excellent hFE linearity. 2) Complements the 2SC4617EB. 1.6 0.7 (1) 0.5 0.5 1.0 0.45 (3) 0.37 Structure

2SA1725

Abstract: 2SC4511
Contextual Info: AOK Product Specification AOK Semiconductor Silicon PNP Power Transistors 2SA1725 DESCRIPTION • With T 0 2 2 0 F packagc • Complement to type 2SC4511 APPLICATIONS • Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter A bsolute m axim um ratings Ta=25iC

2SA1774G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR „ 3 FEATURES 1 2 SOT-23 * Excellent hFE linearity * Complements the UTC 2SC4617 3 2 „ SOT-523 ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1761 U nit in mm POWER AMPLIFIER APPLICATIONS. POW ER SW ITCHING APPLICATIONS. • • • Low Collector-Emitter Saturation Voltage : v CE sat = - 0.5V (Max.) (Ic = - 1.5A) High Speed Switching Time : tstg = 0.2(u s (Typ.) Complementary to 2SC4604.

equivalent to 220f

Abstract: 2SA1725 2SC4511
Contextual Info: Inchange Semiconductor Product Specification 2SA1725 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SC4511 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-220F and symbol

smd ic marking PC

Abstract: SMD MARKING 2SA1734
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1734 Features Low saturation voltage: VCE sat = -0.5 V (max) (IC = -700 mA). High speed switching time: tstg = 0.2ìs (typ.). Small flat package. PC = 1.0 to 2.0 W (mounted on ceramic substrate). Absolute Maximum Ratings Ta = 25

A1761

Abstract: 2SA1761 2SC4604
Contextual Info: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −0.5 A) • High-speed switching: tstg = 0.2 s (typ.)

Contextual Info: Product specification 2SA1730 Features Adoption of FBET , MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

2SA1736

Abstract: 2SC4541
Contextual Info: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 s (typ.)

Contextual Info: SMD Type Product specification 2SA1735 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -500mA) High Speed Switching Time: tstg = 0.25ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4540 Absolute Maximum Ratings Ta = 25

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4617 NPN SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR  FEATURES * Low Cob Cob=2.0pF typ * Complements the UTC 2SA1774  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2SC4617L-x-AB3-R 2SC4617G-x-AB3-R

2SA1774

Abstract: SMD310
Contextual Info: ON Semiconductort 2SA1774 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where