2SA1791 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high-frequency amplification Complementary to 2SC4656J 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)

2SA179

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SA1791G ue pl d in an c se ed lud pl vi an m m es si

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656G Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791G • Features ■ Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob

2SA1791J

Abstract: 2SC4656J SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656J Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791J 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 5˚ Symbol Rating

2SA179

Abstract: 2SA1791J 2SC4656J SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656J Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791J 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Unit: mm

2SA1791

Abstract: 2SC4656
Contextual Info: Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 Unit: mm 0.2+0.1 –0.05 Parameter Symbol Ratings Unit VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V

2SA1791G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791G Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC4656G • Package • High transition frequency fT • Small collector output capacitance Cob

2SA1791J

Abstract: 2SC4656J SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high-frequency amplification Complementary to 2SC4656J 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656G Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791G • Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791G Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC4656G • Package • High transition frequency fT • Small collector output capacitance Cob

2SA1791

Abstract: 2SC4656
Contextual Info: Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 Unit: mm 1.6±0.15 Ratings Unit VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V Collector current IC –50

2SA1791

Abstract: 2SC4656
Contextual Info: Transistor 2SC4656 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1791 Unit: mm 1.6±0.15 0.4 1 3 0.5 0.5 +0.1 Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SC4656G • Features ue pl d in an c se ed lud pl vi

2SB1446

Abstract: 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632
Contextual Info: •Silicon Small Signal Transistors # General-use Low Frequency Amplifiers and Others Package No. SS-Mini Type (D1 ) S-Mini Type (D5) I 2SB1462 ' 2SB1218A . 2SD2216 2SD1819A : 2SB1219/A i 2SD1820/A i 2SA1791 i 2SC4656 Mini Type (D12) New S Type (034) ! 2SB709A

2SA1791J

Abstract: 2SC4656J SC-89
Contextual Info: Transistors 2SC4656J Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791J 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) 5˚ Parameter Symbol Rating Unit VCBO 50 V Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SC4656G • Package • High transition frequency fT

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SA1791G • Package • High transition frequency fT

2SA1791

Abstract: 2SC4656 SC-75
Contextual Info: Transistors 2SA1791 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC4656 Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 0.8±0.1 1.6±0.15 Collector-emitter voltage Base open Emitter-base voltage (Collector open)

2SA179

Abstract: SC-89 2SA1791J 2SC4656J
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high-frequency amplification Complementary to 2SC4656J

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high-frequency amplification Complementary to 2SC4656J

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656J Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791J 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Unit: mm

2SA1791

Abstract: 2SC4656 SC-75
Contextual Info: Transistors 2SC4656 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791 M Di ain sc te on na tin nc ue e/ d Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l

2SA1791

Abstract: 2SC4656 SC-75
Contextual Info: Transistors 2SA1791 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC4656 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 1˚ 3 0.3 2 Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Emitter-base voltage (Collector open)