2SB0710 Search Results

2SB0710A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602A • Features  Package  Large collector current IC  Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features

Contextual Info: 2SB071040MLYY 2SB071040MLYY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB071040MLYY is a schottky barrier diode chips fabricated Ø Low power losses, high efficiency; La Lb in silicon epitaxial planar technology; Ø Guard ring construction for transient protection;

Contextual Info: 2SB071040MLYY 2SB071040MLYY 肖特基二极管芯片 描述 Ø 2SB071040MLYY是采用硅外延工艺制造的肖特 基二极管芯片； Ø 损耗功率小，效率高； Ø 具有瞬态反应保护能力的保护环结构； Ø 高ESD能力； Ø 高抗浪涌电流能力；

Contextual Info: Transistors 2SB0710 2SB710 , 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2SB0710A Collector-emitter voltage 2SB0710

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0602A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0710A • Features  Package  Low collector-emitter saturation voltage VCE(sat)  Mini type package, allowing downsizing of the equipment and automatic

2SB0710

Abstract: 2SD0602
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710 Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SD0602 • Package ue pl d in an c se ed lud pl vi an m m es

2SB0710A

Abstract: 2SB0710 2SB710 2SB710A 2SD0602 2SD0602A 2SD602 2SD602A
Contextual Info: Transistor 2SB0710, 2SB0710A 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0602 (2SD602) and 2SD0602A (2SD602A) Unit: mm • Features Collector to 2SB0710 emitter voltage 2SB0710A –25 –50 VEBO –5 V

2SB0710

Abstract: 2SD0602
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 • Features ■ Package • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602A • Features M Di ain sc te on na tin nc ue e/ d  Package  Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0602A (2SD602A) Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0710A (2SB710A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710 Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SD0602 • Features ■ Package • Large collector current IC

2SB0710A

Abstract: 2SD0602A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602A • Package  Large collector current IC  Mini type package, allowing downsizing of the equipment and automatic

2SB0710A

Abstract: 2SB710A 2SD0602A 2SD602A
Contextual Info: Transistors 2SD0602A 2SD602A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0710A (2SB710A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Low collector-emitter saturation voltage VCE(sat)

2SB0710A

Abstract: 2SB710A 2SD0602A 2SD602A
Contextual Info: Transistor 2SD0602A 2SD602A Silicon NPN epitaxial planar type Unit: mm For general amplification Complementary to 2SB0710A (2SB710A) 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Low collector to emitter saturation voltage VCE(sat)

2SB0709A

Abstract: 2SB0710 2SB709A 2SB710 XN04482 XN4482
Contextual Info: Composite Transistors XN04482 XN4482 Silicon PNP epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 1.1+0.2 –0.1 2SB0709A(2SB709A) + 2SB0710(2SB710) ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol

hFE CLASSIFICATION Marking 24

Abstract: marking DR 2SB0710 2SB0710A marking 25 SC-59 power Transistor hFE CLASSIFICATION Marking CE 2SB710 2SB710A 2SD0602 2SD0602A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features

2SB0710A

Abstract: 2SD0602A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB0710A SOT-23-3L TRANSISTOR PNP FEATURES z Large collector current IC z Complements the 2SD0602A. 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SD602

Contextual Info: Transistor 2SD0602, 2SD0602A 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0710 (2SB710) and 2SB0710A (2SB710A) Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d Symbol

2SD0602A

Abstract: 2SB0710A 2SD0602
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0602A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0710A • Package  Low collector-emitter saturation voltage VCE(sat)  Mini type package, allowing downsizing of the equipment and automatic

2SB0710A

Abstract: 2SD0602A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602A • Package  Large collector current IC  Mini type package, allowing downsizing of the equipment and automatic

2SB0710A

Abstract: 2SD0602A
Contextual Info: Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A 0.40+0.10 –0.05 0.16+0.10 –0.06 0.95 (0.95) 1.9±0.1 1.1+0.2 –0.1 Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

2SB0710

Abstract: 2SB0710A 2SD0602 2SD0602A
Contextual Info: Transistors 2SB0710, 2SB0710A Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD0602 and 2SD0602A 0.40+0.10 –0.05 1.9±0.1 Collector to emitter voltage 2SB0710 1.1+0.2 –0.1 Symbol Rating Unit VCBO −30 V V 1: Base

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0602A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0710A • Package  Low collector-emitter saturation voltage VCE(sat)  Mini type package, allowing downsizing of the equipment and automatic