2SB0933 Search Results

2SB0933

Abstract: 2SB933 2SD1256
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 4.4±0.5 10.0±0.3 1.5±0.1 1.5+0 –0.4

2SD1256

Abstract: 2SB0933 2SB933
Contextual Info: Power Transistors 2SB0933 2SB933 Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol

2SB0933

Abstract: 2SB933 2SD1256 2sd1256 transistor
Contextual Info: Power Transistors 2SB0933 2SB933 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –10 A Collector current

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

Contextual Info: Power Transistors 2SD1256 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 Parameter 3.0+0.4 –0.2 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . • Absolute Maximum Ratings TC = 25°C

2SB0933

Abstract: 2SB933 2SD1256
Contextual Info: Power Transistors 2SD1256 Silicon NPN epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 10 A Collector current IC 5 A Ta=25°C

2SD1256

Abstract: 2SB0933
Contextual Info: Power Transistors 2SD1256 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD1256

Abstract: 2SB0933
Contextual Info: Power Transistors 2SD1256 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open Collector-emitter voltage (Base open) VCBO 130

2SC5224

Abstract: 2SA1949 2SB1573 2SD2407 A1534A 2SB0774 2SB1576 2SB946 T0-92N 2SA1951
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions U Type (D36) TO-126 (D49 * , D50) MT3 Type (D40) MT4 Type (D41) TO-202 (D51) T0-220(a) (D52) TO-220F (D55) 2SC1398A