2SB103 Search Results

2SB1034

Abstract: 2sB103
Contextual Info: JMnic Product Specification 2SB1034 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain ・DARLINGTON APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter

2SB1037

Abstract: 2SD1459
Contextual Info: SavantIC Semiconductor Product Specification 2SB1037 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High allowable collector dissipation. ·Complement to type 2SD1459 APPLICATIONS ·For color TV vertical output, sound output applications

2SB1031

Abstract: 2SD1435 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification 2SD1435 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type 2SB1031 APPLICATIONS ·For low frequency power amplifier and high current switching applications

2SB1037

Abstract: 2SD1459
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1037 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SD1459 APPLICATIONS ·Designed for color TV vertical output, sound output

Contextual Info: 2SD1436 K Silicon NPN Triple Diffused HITACHI Application Power switching complementary pair with 2SB1032(K) Outline TO -3P 2SD1436ÇK) Absolute Maximum Ratings (Ta = 25 °C) Item Sym bol Rating Unit Collector to base voltage ^G B G 120 V Collector to em itter voltage

2SB1033

Abstract: 2SD1437
Contextual Info: 2SB1033 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD1437 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)

Contextual Info: 2SD1436 K Silicon NPN Triple Diffused HITACHI Application Power switching complementary pair with 2SB1032(K) Outline TO -3P 2SD1436(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage ^C B O 120 V Collector to em itter voltage

2SA1015

Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Contextual Info: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624

761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338

2SB1031

Abstract: 2SD1435
Contextual Info: HITACHI 2SD1435 R SILICON NPN EPITAXIAL LOW FREQ UENC Y POWER AM PLIFIER HIGH CURRENT SW ITCHING CO M PLEM ENTARY PAIR WITH 2SB1031<gs u 1. Rase 2. I fdtaî titti C o lle c t o r (Flange 3. tin n ie r ( f î i n i e n i i o r u in m it » 16 , a* 11 (TO-3P)

Hitachi DSA00276

Contextual Info: 2SD1436 K Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB1032(K) Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 1.5 kΩ (Typ) 130 Ω (Typ) 3 3 2SD1436(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423, 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423A • Features  Package  Optimum for high-density mounting  Allowing supply with the radial taping

2SB1037

Contextual Info: Ordering number:EN1256C PNP/NPN Planar Silicon Transistors 2SB1037/2SD1459 Color TV Vertical Output, Sound Output Applications Features Package Dimensions • High allowable collector dissipation PC=2W . · Wide ASO. unit:mm 2010C [2SB1037/2SD1459] JEDEC : TO-220AB

Hitachi DSA00389

Abstract: 2SB1032 2SD1436 80-W 2sB103 C2540
Contextual Info: 2SD1436 K Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB1032(K) Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 1.5 kΩ (Typ) 130 Ω (Typ) 3 3 2SD1436(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol

Contextual Info: ROH M CO 4GE D LTD E3 7020^=1=] 000SS24 2 E S RHM 2SB1033 / T ransistors - p s 3-/9 xt°$*yrJi'7°l'-J-BPNP y ' j 3 > h 7 > y ^ ^ fôJÜ&H^Jii'iïffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor W f i- t f > i0 / D im e n s io n s {U n it : mm

2SB1034

Contextual Info: Inchange Semiconductor Product Specification 2SB1034 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain ・DARLINGTON APPLICATIONS ・For power amplifier applications PINNING PIN

2SB1033

Abstract: 2SD1437
Contextual Info: Inchange Semiconductor Product Specification 2SB1033 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1437 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2sd1436

Abstract: Hitachi DSA00279
Contextual Info: 2SD1436 K Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB1032(K) Outline 2SD1436(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120

2SD1459

Abstract: 2SB1037
Contextual Info: SavantIC Semiconductor Product Specification 2SD1459 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High allowable collector dissipation. ·Complement to type 2SB1037 APPLICATIONS ·Color TV vertical output application ·Sound output application

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423 Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030 • Package  Optimum for high-density mounting  Allowing supply with the radial taping

1256c

Abstract: 3B103 2SB1037 2SD1459 SD1459
Contextual Info: O rd e rin g n u m b e r: EN 1256C 2SB1037/2SD1459 N0.1256C PNP/NPN Planar Silicon Transistors Color TV Vertical Output, Sound Output Applications F e a tu r e s •High allowable collector dissipation P q = 2W . • Wide ASO. *0 ( —)150 ( —)150 <“ )5

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 3.0±0.2 4.0±0.2 • Features Parameter Ta=25˚C Symbol Collector to 2SB1030 base voltage 2SB1030A Collector to

2SB1036

Abstract: 2sB103
Contextual Info: Transistors 2SB1036 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Unit: mm 4.0±0.2 • Features • Optimum for high-density mounting • Allowing supply with the radial taping • Low noise voltage NV 15.6±0.5 0.8 ue