2SB1219A
Abstract: 2SD1820A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219A • Package Low collector-emitter saturation voltage VCE(sat) S-Mini type package, allowing downsizing of the equipment and automatic
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2002/95/EC)
2SD1820A
2SB1219A
2SB1219A
2SD1820A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820A • Package M Di ain sc te on na tin nc ue e/ d Features Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SB1219A
2SD1820A
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2SB1219
Abstract: 2SB1219A 2SD1820 2SD1820A
Text: Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planar type 0.425 Unit: mm For general amplification Complementary to 2SB1219 and 2SB1219A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • Low collector to emitter saturation voltage VCE(sat)
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2SD1820,
2SD1820A
2SB1219
2SB1219A
2SD1820
2SB1219A
2SD1820
2SD1820A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219A • Features Package Low collector-emitter saturation voltage VCE(sat) S-Mini type package, allowing downsizing of the equipment and automatic
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Original
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PDF
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2002/95/EC)
2SD1820A
2SB1219A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planar type (0.425) Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 5°
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PDF
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2002/95/EC)
2SB1219,
2SB1219A
2SD1820
2SD1820A
2SB1219
2SB1219A
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2SB1219
Abstract: 2SB1219A 2SD1820 2SD1820A
Text: Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planer type 0.425 Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • Large collector current IC • S-mini type package, allowing downsizing of the equipment and
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2SB1219,
2SB1219A
2SD1820
2SD1820A
2SB1219
2SB1219
2SB1219A
2SD1820A
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2SB1219
Abstract: 2SB1219A 2SD1820 2SD1820A
Text: Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1219 and 2SB1219A Unit: mm • Features Collector to 2SD1820 30 VCBO 25 VEBO 5 V Peak collector current ICP 1 A Collector current IC 500 mA Collector power dissipation
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2SD1820,
2SD1820A
2SB1219
2SB1219A
2SD1820
2SB1219A
2SD1820
2SD1820A
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2SB1219
Abstract: 2SB1219A 2SD1820 2SD1820A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820, 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219 and 2SB1219A (0.425) Unit: mm 0.3+0.1 –0.0 • Features • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SD1820,
2SD1820A
2SB1219
2SB1219A
2SD1820
2SB1219A
2SD1820
2SD1820A
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2sa1219
Abstract: 2SB1219 2SB1219A 2SD1820 2SD1820A
Text: Transistor 2SB1219, 2SB1219A Silicon PNP epitaxial planar type 0.425 Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • Large collector current IC • S-Mini type package, allowing downsizing of the equipment
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2SB1219,
2SB1219A
2SD1820
2SD1820A
2SB1219
2SA1219Anductor
2sa1219
2SB1219
2SB1219A
2SD1820A
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2SB1219
Abstract: 2SB1219A 2SD1820 2SD1820A
Text: Transistor 2SB1219, 2SB1219A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1820 and 2SD1820A Unit: mm • Features 1.25±0.1 0.425 0.3–0 +0.1 Ta=25˚C 0.65 1.3±0.1 ■ Absolute Maximum Ratings 0.425 1 0.65 ● 2.1±0.1
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2SB1219,
2SB1219A
2SD1820
2SD1820A
2SB1219
2SB1219
2SB1219A
2SD1820A
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2SB1219A
Abstract: 2SD1820A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219A • Package Low collector-emitter saturation voltage VCE(sat) S-Mini type package, allowing downsizing of the equipment and automatic
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2002/95/EC)
2SD1820A
2SB1219A
2SB1219A
2SD1820A
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IC DATE CODE
Abstract: IC marking TY
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219A • Package Low collector-emitter saturation voltage VCE(sat) S-Mini type package, allowing downsizing of the equipment and automatic
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2002/95/EC)
2SD1820A
2SB1219A
IC DATE CODE
IC marking TY
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820A • Features Package Large collector current IC S-Mini type package, allowing downsizing of the equipment and automatic
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Original
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PDF
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2002/95/EC)
2SB1219A
2SD1820A
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2SB1219A
Abstract: 2SD1820A
Text: Transistors 2SD1820A Silicon NPN epitaxial planer type 0.425 Unit: mm For general amplification Complementary to 2SB1219A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Features 0.9±0.1 3 1 2 0.2±0.1 • Low collector to emitter saturation voltage VCE(sat)
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2SD1820A
2SB1219A
2SB1219A
2SD1820A
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2SB1219A
Abstract: 2SD1820A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820A • Package Large collector current IC S-Mini type package, allowing downsizing of the equipment and automatic
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2002/95/EC)
2SB1219A
2SD1820A
2SB1219A
2SD1820A
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2SB1219
Abstract: 2SB1219A 2SD1820 2SD1820A
Text: Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planer type 0.425 Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • Large collector current IC • S-mini type package, allowing downsizing of the equipment and
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2SB1219,
2SB1219A
2SD1820
2SD1820A
2SB1219
2SB1219
2SB1219A
2SD1820A
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2SB1219A
Abstract: 2SD1820A
Text: Transistors 2SD1820A Silicon NPN epitaxial planer type 0.425 Unit: mm For general amplification Complementary to 2SB1219A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Features 0.9±0.1 3 1 2 0.2±0.1 • Low collector to emitter saturation voltage VCE(sat)
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2SD1820A
2SB1219A
2SB1219A
2SD1820A
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hFE CLASSIFICATION Marking 24
Abstract: 2SB1219 2SB1219A 2SD1820 2SD1820A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planar type (0.425) Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 M
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2002/95/EC)
2SB1219,
2SB1219A
2SD1820
2SD1820A
2SB1219
hFE CLASSIFICATION Marking 24
2SB1219
2SB1219A
2SD1820A
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2SD1820
Abstract: 2SB1219 2SB1219A 2SD1820A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820, 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219 and 2SB1219A (0.425) Unit: mm 0.3+0.1 –0.0 • Features • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SD1820,
2SD1820A
2SB1219
2SB1219A
2SD1820
2SD1820
2SB1219A
2SD1820A
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Untitled
Abstract: No abstract text available
Text: Product specification 2SB1219A Features Large collector current IC. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO
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2SB1219A
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MARKING DQ
Abstract: 2SB1219A
Text: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB1219A Features Large collector current IC. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO
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2SB1219A
MARKING DQ
2SB1219A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820, 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219 and 2SB1219A (0.425) Unit: mm 0.3+0.1 –0.0 • Features • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SD1820,
2SD1820A
2SB1219
2SB1219A
2SD1820
2SD1820
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2SB1219
Abstract: 2SB1219A 2SD1820 2SD1820A
Text: Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1219 and 2SB1219A +0.1 0.3Ð0.0 • Features Low collector to emitter saturation voltage VCE sat . S-Mini type package, allowing downsizing of the equipment and
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2SD1820,
2SD1820A
2SB1219
2SB1219A
2SD1820
2SB1219A
2SD1820
2SD1820A
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2SB1219
Abstract: 2SB1219A 2SD1820 2SD1820A
Text: Transistors 2SD1820, 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219 and 2SB1219A 0.425 Unit: mm 0.3+0.1 –0.0 • Features • Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and
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2SD1820,
2SD1820A
2SB1219
2SB1219A
2SD1820
2SB1219A
2SD1820
2SD1820A
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