2SB1308 Search Results

2SB1308

Abstract: 2SD1963 T100
Contextual Info: 2SB1308 Transistors Power transistor −50V, −3A 2SB1308 zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963. zExternal dimensions (Unit : mm)

MCC BFR

Contextual Info: MCC TM Micro Commercial Components Features • • • • • Case Material: Molded Plastic. Classification Rating 94V-0
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1308 PNP Plastic-Encapsulate

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors 2SB1308 TRANSISTOR（PNP ） FEATURES Power dissipation PCM : 0.5 Collector current ICM : -3 Collector-base voltage V BR CBO : -30 ＳＯＴ－８９ １．ＢＡＳＥ

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1308 TRANSISTOR PNP 1. BASE FEATURES z Power Transistor z Excellent DC current Gain z Low Collector-emitter Saturation Voltage 2. COLLECTOR 3. EMITTER

2SB1308

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: SOT-89 TRANSISTOR (PNP) 1. BASE 0.5 W (Tamb=25℃) -3 2. COLLECTOR1 A

Contextual Info: MCC TM Micro Commercial Components 2SB1308-P 2SB1308-Q 2SB1308-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

2SB1308

Abstract: BJT BF 167
Contextual Info: SPICE PARAMETER 2SB1308 by ROHM TR Div. * 2SB1308 PNP BJT model * Date: 2006/11/14 .MODEL 2SB1308 PNP + IS=500.00E-15 + BF=167.27 + VAF=6.0750 + IKF=13.423 + ISE=500.00E-15 + NE=1.8133 + BR=101.30 + VAR=100 + IKR=.95905 + ISC=2.4533E-12 + NC=1.2497 + NK=.74369

2SB1308

Contextual Info: h -7 > y 7. £ /Transistors 2 S B 1 3 2SB1308 I PNP '> « ;□ > b7>yz$ Epitaxial Planar PNP Silicon Transistor ftS à M M Iflî/L o w Freq. Power Amp. 8 • W fN ’jiEI/Dimensions Unit : mm 1) V cE fsa *)^ 1'« V cE (sa t)= -0 .4 5 V (Max.) *-» -S:

2SB1308Q

Abstract: 2sb1308r MCC BFR
Contextual Info: MCC TM Micro Commercial Components Features x • • • • 2SB1308-P 2SB1308-Q 2SB1308-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Plastic-Encapsulate Transistors Case Material: Molded Plastic. UL Flammability

2sb1308p

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x • • • • 2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R PNP Plastic-Encapsulate Transistors Case Material: Molded Plastic. UL Flammability

MCC BFR

Contextual Info: MCC TM Micro Commercial Components 2SB1308-P 2SB1308-Q 2SB1308-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: MCC TM Micro Commercial Components Features x • • • • Case Material: Molded Plastic. Classification Rating 94V-0 2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"#

Contextual Info: WILLAS FM120-M+ 2SB1308 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features TRANSISTOR PNP design, excellent power dissipation offers • Batch process better

MCC BFR

Contextual Info: MCC TM Micro Commercial Components 2SB1308-P 2SB1308-Q 2SB1308-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: Product specification 2SB1308 Features Low saturation voltage, typically VCE sat = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO

Contextual Info: 2SB1308 K -7 > v ^ £ / T ransistors 2SB1308 I f c f ^ v P N P y U3> h:7>v*£ Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. 1 V cE sat)*'’ '(Ê ^ 'o V c E (s a t)= — 0 .4 5 V (M ax.) i.e io .i (IC /IB = - 1 -5 A /-0 .1 5 A ) 2) r a « » * « * hFEvnms'&m e

B204

Abstract: 2SB1308 2SD1963 rohm d204 D204
Contextual Info: Transistors 2SB1308 2SD1963 94S-166-B204 (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

2SD1963

Abstract: 2SB1308 T100 RS Marking
Contextual Info: 2SD1963 Transistors Power transistor 50V, 3A 2SD1963 zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308. zExternal dimensions (Unit : mm)

MCC BFR

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • 2SB1308 PNP Plastic-Encapsulate Transistors Power dissipation: PCM = 0.5W Tamb=25℃

2SB1308

Contextual Info: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: SOT-89 TRANSISTOR (PNP) 1. BASE 0.5 W (Tamb=25℃) -3 2. COLLECTOR1 A -30 3. EMITTER 2

2SD1963

Abstract: B204 2SB1308 94S-166-B204 D204
Contextual Info: Transistors 2SB1308 2SD1963 94S-166-B204 (94S-342-D204) 290

BFr pnp transistor

Abstract: 2SB1308
Contextual Info: 2SB1308 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: SOT-89 TRANSISTOR (PNP) 1. BASE 0.5 W (Tamb=25℃) -3 2. COLLECTOR1 A -30 3. EMITTER 2 3 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Contextual Info: 2SB1308 2SD1963 Transistors Power Transistor —50V> —3A 2SB1308 •Features •A b s o lu te maximum ratings (Ta=25'C ) 1 ) Low V ce(m i). (M ax. —0.45Vm ax. a t Ic/I b = - 1 . 5 A / —0.15A) 2 ) Excellent DC curre nt gain characteristics. 3 ) C om plem ents the 2S D 1963.

Contextual Info: MCC TM Micro Commercial Components Features x • • • • 2SB1308-P 2SB1308-Q 2SB1308-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Plastic-Encapsulate Transistors Case Material: Molded Plastic. UL Flammability