2SB1412 Search Results

Contextual Info: Product specification 2SB1412 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 PNP silicon transistor.

2SB1412

Abstract: 2SB1326 2SB1386 2SD2118 T100 DPACK2
Contextual Info: 2SB1412 PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product Features 1 Low VCE sat). D-Pack 2)Excellent DC current gain characteristics 3)Complements the 2SD2118 6.6 5.3 0.2 2.3 0.2 0.1 0.5 0.1 0.1 VCEO −20 V Emitter-base voltage

2SB1412

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 2SB1412 TRANSISTOR PNP TO-251 TO-252-2L FEATURES Power amplifier applications 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

Contextual Info: Transistors Low Frequency Transistor 20V, 5A 2 SB 1386 / 2 SB 1412 / 2 SB 1326 / 2 SB 1436 • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). 2SB1412 2SB1386 VcE(sai) = -0 .3 5 V (Typ.) 2 ^2 6 .5 ± 0 .2 (|C/ | B = - 4 A / - 0 . 1 A )

transistor 2sb1412

Abstract: 2SB1412
Contextual Info: 2SB1412 PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power amplifier applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage

2SB1412

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 TO-252 FEATURES *Excellent DC current gain characteristics *Low VCE SAT VCE(SAT)= -0.35V (Typ)

transistor b1412

Abstract: 2SB1412F5 b1412
Contextual Info: 2SB1412F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1412-*Q, where ★ is hFE code and □ is lot number low collector saturation voltage, typically VCE(sat) = -0.35 V for lC/lB = -4 A/-0.1 A

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SB1412 PNP SILICON TRANSISTOR H I GH V OLT AGE SWI T CH I N G T RAN SI ST OR  DESCRI PT I ON The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor.  FEAT U RES * Excellent DC current gain characteristics * Low VCE SAT

BJT BF 167

Abstract: 2SB1412
Contextual Info: SPICE PARAMETER 2SB1412 by ROHM TR Div. * 2SB1412 PNP BJT model * Date: 2006/11/14 .MODEL 2SB1412 PNP + IS=500.00E-15 + BF=167.27 + VAF=6.0750 + IKF=13.423 + ISE=500.00E-15 + NE=1.8133 + BR=101.30 + VAR=100 + IKR=.95905 + ISC=2.4533E-12 + NC=1.2497 + NK=.74369

2SB1412

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. „ 1 FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ)

2sb132

Abstract: 2SB1326 2SB1386 2SB1412 2SD2097 2SD2098 2SD2118 T100
Contextual Info: 2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 / 2SB1326 zExternal dimensions (Unit : mm) 2SB1412 (1) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1 −0.05 C0.5 0.65±0.1 0.75 0.55±0.1 0.4±0.1 1.5±0.1 2.3±0.2

2SB1412

Contextual Info: Transistors SMD Type Low Frequency Transistor 2SB1412 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2

d204 transistor

Abstract: D204 2SD2166 2SB1412 2SB1436 2SD2097 2SD2098 2SD2118 transistors 96-229-D204
Contextual Info: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /

Contextual Info: 2SB1412F5 / T ransistors O Q D » w D Æ A o p c i t f ^ + y 7 ^ 7 P^ - ^ P N P y V u > h y > • " W I A h W E pjtaxja| p|anar pimp silicon Transistor A y * $ i£JS>j£*SlHffl/'Low Freq. Power Amp. 7> h P ' f 7 7 7 V Jiffl/Stro b o Flash. • w* • \ri£EI/Dimensions Unit : mm

Contextual Info: Low VCE sat transistor (strobe flash) 2SD2118 zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. zDimensions (Unit : mm) 2SD2118 zStructure Epitaxial planar type

Contextual Info: 2SB1412-P MCC TM Micro Commercial Components 2SB1412-Q
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1412-R Features x x • • • • PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage

2SB1412

Contextual Info: 2SB1412-P MCC TM Micro Commercial Components Features x x • • • • 2SB1412-Q
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1412-R PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage

2SB1412

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. „ 1 FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ)

2SD2118

Abstract: 2SB1412
Contextual Info: Low frequency transistor −20V,−5A 2SB1412 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. 2SB1412 zStructure Epitaxial planar type

2SB1412

Abstract: 2SD2118
Contextual Info: Low VCE sat transistor (strobe flash) 2SD2118 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. 2SD2118 zStructure Epitaxial planar type

2SB1326

Abstract: 2SB1386 2SB1412 2SD2097 2SD2098 2SD2118 T100
Contextual Info: 2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 / 2SB1326 !External dimensions (Units : mm) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 +0.1 0.4−0.05 2SB1326 4.4±0.2 0.9 (2) 14.5±0.5 (3) 2.54 2.54 1.05 ROHM : ATV

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 2SB1412 TRANSISTOR PNP TO-251 TO-252-2L FEATURES Power amplifier applications 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value

b1412

Abstract: 2SB1412R 2SB1412Q
Contextual Info: 2SB1412-P MCC TM Micro Commercial Components Features x x • • • • 2SB1412-Q
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1412-R PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage

transistor

Abstract: B204 2SB1412 2sb1386 2SD2098 hFE is transistor 2SD2166 2SB1436 2SB1326 data sheet transistor PNP
Contextual Info: Transistors Low Frequency Transistor *20V,*5A 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.