2SB1462 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462 • Package • High forward current transfer ratio hFE

Contextual Info: Transistor 2SD2216J Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 0.50 0.27±0.02 0.50 +0.05 1.00±0.05 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat .

Contextual Info: Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462 Unit: mm 0.2+0.1 –0.05 3 0.75±0.15 5˚ • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

2SB1462L

Abstract: 2SD2216L
Contextual Info: Transistors 2SD2216L Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1462L 0.035±0.005 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of

2SB1462G

Abstract: 2SD2216G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SD2216G • Features ue pl d in an c se ed lud pl vi an m m es

2SB1462

Abstract: 2SD2216 SC-75
Contextual Info: Transistor 2SB1462 Silicon PNP epitaxial planar type Unit: mm For general amplification Complementary to 2SD2216 0.2+0.1 –0.05 0.15+0.1 –0.05 • High forward current transfer ratio hFE • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

2SB1462J

Abstract: 2SD2216J SC-89
Contextual Info: Transistors 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 0.375 2 0 to 0.02 (0.50)(0.50) (0.80) 1 0.27±0.02 5˚ 0.70+0.05 –0.03 • High forward current transfer ratio hFE

2SB1462L

Abstract: 2SD2216L
Contextual Info: Transistors 2SB1462L Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216L Unit: mm 0.020±0.010 2 0.80±0.05 3 • Features 4 1 1.00±0.05 0.60±0.05 0.30±0.03 Parameter Symbol Rating Unit Collector-base voltage Emitter open

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 (0.375) 2 0 to 0.02

Contextual Info: Transistors 2SD2216L Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462L Unit: mm 0.020±0.010 2 M Di ain sc te on na tin nc ue e/ d 0.80±0.05 3 • Features 4 1 Parameter Symbol Rating Unit Collector-base voltage Emitter open

2SB1462J

Abstract: 2SD2216J
Contextual Info: Transistor 2SB1462J Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 VCBO –60 V VCEO –50 V Emitter to base voltage VEBO –7 V Peak collector current ICP –200 mA Collector current

2SB1462L

Abstract: 2SD2216L
Contextual Info: Transistors 2SB1462L Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216L Unit: mm M Di ain sc te on na tin nc ue e/ d 0.020±0.010 2 4 1 1.00±0.05 Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

2SB1462L

Abstract: 2SD2216L
Contextual Info: Transistors 2SD2216L Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462L Unit: mm M Di ain sc te on na tin nc ue e/ d 0.020±0.010 2 4 1 0.20±0.03 1.00±0.05 • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage Emitter open

2SB1462G

Abstract: 2SD2216G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216G Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462G • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro

2SB1462J

Abstract: 2SD2216J
Contextual Info: Transistor 2SD2216J Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 0.50 0.27±0.02 0.50 +0.05 1.00±0.05 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat .

IC4800

Abstract: 2SB1462J 2SD2216J
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462J • Features ue pl d in an c se ed lud pl vi an m m es

2SB1462J

Abstract: 2SD2216J SC-89
Contextual Info: Transistor 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Unit: mm For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 5˚ Symbol Rating Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage

Contextual Info: Transistors 2SB1462 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 • High forward current transfer ratio hFE • SS-Mini type package allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462G Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216G • Features ■ Package • High forward current transfer ratio hFE • SS-Mini type package, allowing downsizing of the equipment and

Contextual Info: 2SD2216L Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1462L 0.035±0.005 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 • High forward current transfer ratio hFE

2SB1462L

Abstract: 2SD2216L
Contextual Info: Transistors 2SB1462L Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD2216L 0.020±0.010 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of

2SB1462

Abstract: 2SD2216 SC-75
Contextual Info: Transistors 2SB1462 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 1˚ 3 • Absolute Maximum Ratings Ta = 25°C 2 0.3 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 (0.4) • High forward current transfer ratio hFE