2SB1495 Search Results

B1495

Abstract: 2SB1495 2SD2257 100-C3000
Contextual Info: 2SB1495 東芝トランジスタ シリコンPNPエピタキシャル形 2SB1495 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 • 飽和電圧が低い。 : VCE sat = −1.5 V (最大) (IC = −1.5 A)

D2257

Abstract: 2SB1495 2SD2257
Contextual Info: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495

2SB1495

Abstract: 2SD2257
Contextual Info: SavantIC Semiconductor Product Specification 2SB1495 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2257 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·High power switching applications

b1495

Abstract: 2SB1495 2SD2257
Contextual Info: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257

B1495

Abstract: 2SB1495 2SD2257
Contextual Info: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257

Contextual Info: SILIC O N P N P EP IT A X IA L T Y P E 2SB1495 U nit in mm HIGH PO W ER SW ITCH IN G APPLICATIONS. I0 ± 0 .3 • • • High DC Current Gain : h p E = 2000 M in. (at V cE = _ 2V, I c = —2A) Low Saturation Voltage : VCE(sat) = - 1-5V(MAX.)(at IC = -1 .5 A )

toshiba b1495

Contextual Info: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257

2SB1495

Abstract: 2SD2257
Contextual Info: TO SH IBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 495 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE= _ 2 V , Ic = -2A ) Low Saturation Voltage : VCE (sa t)= -l-5 V (MAX.) (IC= -1 .5 A )

Contextual Info: TO SHIBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2SB1495 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • • High DC Current Gain : hpE = 2000 Min. (VCE = - 2 V , I c = - 2 A ) Low Saturation Voltage • Complementary to 2SD2257 10±0.3

Contextual Info: , One. J cs TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 2SB1495 Silicon PNP Darlington Power Transistor us A DESCRIPTION • High DC Current Gain- "2 : hFE= 2000(Min)@ (VCE= -2V, lc= -2A) • Low-Collector Saturation Voltage: VCE(satr -1.5V(Max.)@lc= -1.5A

Contextual Info: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495

Contextual Info: TOSHIBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 149 5 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • 10 +0.3 High DC Current Gain : hFE = 2000 Min. (VCe = -2 V , IC = -2 A ) Low Saturation Voltage : VCE( s a t ) =— (MAX.) (IC = -1.5A )

2SB1495

Abstract: 2SD2257
Contextual Info: TOSHIBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 495 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • High DC Current Gain : hFE = 2000 Min. (VCE= -2 V , IC= -2 A ) Low Saturation Voltage : VCE(sat)=—1-5V (MAX.) (IC= -1.5A ) Complementary to 2SD2257

Contextual Info: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257

2SB1495

Abstract: 2SD2257
Contextual Info: SavantIC Semiconductor Product Specification 2SD2257 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1495 ·DARLINGTON APPLICATIONS ·High power switching applications

2SB1495

Abstract: 2SD2257
Contextual Info: TO SH IBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 495 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE= _ 2 V , Ic = -2A ) Low Saturation Voltage : VCE (sa t)= -l-5 V (MAX.) (IC= -1 .5 A )

D2257

Abstract: 2SB1495 2SD2257
Contextual Info: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495

d2257

Contextual Info: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495

Contextual Info: T O SH IB A 2SD2257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2257 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 1 Q ± 0 -3 • • • High DC Current Gain : hjrj; = 2000 MIN. Low Saturation Voltage : V^ e (sat) = 1.5V (MAX.)

2SB1495

Abstract: 2SD2257
Contextual Info: TO SH IBA 2SD2257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2257 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2 2.7±Q 2 CO • • • High DC Current Gain : hjrE = 2000 MIN. Low Saturation Voltage :

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2SB1495

Abstract: 2SD2257
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 2000 Min @ (VCE= -2V, IC= -2A) ·Low-Collector Saturation Voltage: VCE(sat)= -1.5V(Max.)@IC= -1.5A ·Complement to Type 2SD2257

D2257

Abstract: 2SB1495 2SD2257
Contextual Info: 2SD2257 東芝トランジスタ シリコンNPNエピタキシャル形 2SD2257 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 最小 (VCE = 2 V, IC = 2 A)