2SB1642 Search Results
2SB1642 Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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2SB1642 | Unknown | Japanese Transistor Cross References (2S) | Scan | 39.16KB | 1 | ||
2SB1642 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 36.23KB | 1 | ||
2SB1642 |
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Silicon PNP transistor for audio frequency power amplifier applications | Scan | 182.32KB | 3 | ||
2SB1642 |
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TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE | Scan | 183.16KB | 3 |
2SB1642 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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B1642 transistor
Abstract: B1642 2SB1642
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2SB1642 B1642 transistor B1642 2SB1642 | |
B1642 transistor
Abstract: B1642 2sb1642
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2SB1642 B1642 transistor B1642 2sb1642 | |
2SB1642Contextual Info: JMnic Product Specification 2SB1642 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2.5A,IB=-0.25A ・Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ・Audio frequency power amplifier applications |
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2SB1642 O-220F O-220F) 2SB1642 | |
B1642 transistor
Abstract: B1642 2sb1642
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2SB1642 B1642 transistor B1642 2sb1642 | |
Contextual Info: 2SB1642 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1642 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS « « • Low Collector Saturation Voltage : V ce sat = - 1.5V (Max.) (IC = - 2.5A, IB = - 0.25A) Collector Power Dissipation : P q = 25W (Tc = 25°C) |
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2SB1642 | |
2sb1642Contextual Info: 2SB1642 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 642 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Low Collector Saturation Voltage . . « • AT i-\ 1 n T /"IV/r ± . u v u v J-a -x .; \ (T - « 10 ±0.3 r O C A j.B |
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2SB1642 2sb1642 | |
2sb1642Contextual Info: TO SH IBA 2SB1642 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 642 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Low Collector Saturation Voltage . . « • AT i-\ 1 n T /"IV/r ± . u v u v J-a -x .; \ (T - « 10 ±0.3 r O C A j.B |
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2SB1642 2sb1642 | |
2SB1642Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1642 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Collector Power Dissipation: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -2.5A, IB= -0.25A) |
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2SB1642 -10mA 2SB1642 | |
Contextual Info: ^zmi-L-onauetoi iJ^ioaucti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SB1642 DESCRIPTION • Collector-Emitter Breakdown Voltage• "(BNJCfcCJ -uuv \IVINI; |
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2SB1642 O-220F -10mA | |
transistor
Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
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2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220 | |
2SB1642Contextual Info: Inchange Semiconductor Product Specification 2SB1642 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2.5A,IB=-0.25A ・Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS |
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2SB1642 O-220F O-220F) 2SB1642 | |
2sb1642Contextual Info: SavantIC Semiconductor Product Specification 2SB1642 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2.5A,IB=-0.25A ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·Audio frequency power amplifier applications |
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2SB1642 O-220F O-220F) 2sb1642 | |
B1642 transistorContextual Info: 2SB1642 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1642 Audio Frequency Power Amplifier Applications • Low collector saturation voltage: VCE sat = −1.5 V (max) • Collector power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is fully covered with mold resin. |
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2SB1642 B1642 transistor | |
Contextual Info: R1152N SERIES Limited High Input Voltage Tolerant Boost Voltage Regulator NO.EA-108-120404 OUTLINE The R1152N Series are CMOS-based positive voltage regulator controller ICs with high output voltage accuracy, low supply current. The high output current regulator can be composed with this IC, an external power transistor, and capacitors. |
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R1152N EA-108-120404 Room403, Room109, | |
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R1152N050B
Abstract: 2SA1645 2SB1642 R1152N R1152N025B R1152N033B
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R1152N OT-23-5 OT-23-5 10kHz) 2SA1645 R1152N025B R1152N120B 2SB1642 R1152N050B 2SA1645 2SB1642 R1152N025B R1152N033B | |
R1152N034B
Abstract: R1152N04 R1152N114B R1152N033B R1152N038B mark code SA package sot-23-5
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R1152N EA-108-0601 2N114B R1152N115B R1152N116B R1152N117B R1152N118B R1152N119B R1152N120B R1152N034B R1152N04 R1152N114B R1152N033B R1152N038B mark code SA package sot-23-5 | |
R1152NContextual Info: R1152N Series 18V Input LDO with External Tr. The R1152N Series are CMOS-based LDO regulators with external power transistor. By using an external PNP transistor, a low dropout voltage regulator ranging from several tens of mA to several hundreds mA can be configured. Use a low saturation type PNP |
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R1152N Room403, Room109, | |
2SA1941 amp circuit
Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
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BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 | |
2SA1645 equivalentContextual Info: R1152N SERIES High Input Voltage Tolerant Boost Voltage Regulator NO.EA-108-100402 OUTLINE The R1152N Series are CMOS-based positive voltage regulator controller ICs with high output voltage accuracy, low supply current. The high output current regulator can be composed with this IC, an external power transistor, and capacitors. |
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R1152N EA-108-100402 Room403, Room109, 2SA1645 equivalent | |
2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
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SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn | |
THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
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2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747 | |
R1152N064B
Abstract: 2SA1645 2SB1642 R1152N R1152N025B R1152N108B sot 23-5 transister
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R1152N EA-108-0601 R1152N049B R1152N080B R1152N111B R1152N050B R1152N081B R1152N112B R1152N051B R1152N064B 2SA1645 2SB1642 R1152N025B R1152N108B sot 23-5 transister | |
2sc5088 horizontal transistors
Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
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BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a |