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    IR0002

    Abstract: No abstract text available
    Text: 2SB229100MA 2SB229100MA La 2SB229100MA Lb Ø IR Ø Vr=100V IR=0.002mA@ 150°C Ø Ø Ø ESD Ø La 2290µm Lb 2195µm Ø Ø 2290µm X 2290µm Ø 280±20µm 2SB229100MAYY Ø 2SB229100MAYL @8.3ms VRRM 100 V IFAV 10 A IFSM 150 A TJ 150 °C TSTG -40~150 °C


    Original     		PDF 2SB229100MA 002mA@ 2SB229100MAYY 2SB229100MAYL IR0002

    Untitled

    Abstract: No abstract text available
    Text: 2SB229100MA 2SB229100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB229100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical


    Original     		PDF 2SB229100MA 2SB229100MA 002mA@ 2290mm; 2195mm;

    Untitled

    Abstract: No abstract text available
    Text: 2SB229100MA 2SB229100MA SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB229100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø


    Original     		PDF 2SB229100MA 2SB229100MA 2SB229100MAYY 2SB229100MAYL