2SB935 Search Results

2SB935

Abstract: 2SB935A
Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB935A TO-252 +0.1 0.80-0.1 +0.1 0.60-0.1 2.3 2.30 +0.8 0.50-0.7 3 .8 0 +0.15 1.50 -0.15 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High-speed switching. Unit: mm +0.1 -0.1 +0.15 5.55 -0.15 6.50 +0.2 5.30-0.2 +0.15

Contextual Info: 2SB935P Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A)10 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)600m @I(C) (A) (Test Condition)7

2SB935

Abstract: 2SB935A
Contextual Info: Power Transistors 2SB935, 2SB935A Silicon PNP epitaxial planar type 3.4±0.3 8.5±0.2 Unit: mm 6.0±0.5 1.0±0.1 M Di ain sc te on na tin nc ue e/ d • Features 1.5±0.1 10.0±0.3 For low-voltage switching 2.0 10.5min. 0.8±0.1 0.5max. 2.54±0.3 Absolute Maximum Ratings TC=25˚C

2SB935

Abstract: 2SB935A
Contextual Info: Power T ransistors 2SB935, 2SB935A 2SB935, 2SB935A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching • Features • Low collector-emitter saturation voltage V ceissh • High speed switching ' • “N Type” package configuration with a cooling fin for direct soldèring

2SB935

Abstract: 2SB935A
Contextual Info: Power Transistors 2SB935, 2SB935A 2SB935, 2SB935A S ilicon P N P E p ita x ia l P la n a r Type Package Dimensions Low Voltage Switching Unit ! mm • Features 2SB935 Collectorbase voltage 2SB935A 2SB935 Collectoremitter voltage 2SB935A Emitter-base voltage ,s

Contextual Info: Product specification 2SB935A TO-252 +0.1 0.80-0.1 +0.1 0.60-0.1 2.3 2.30 +0.8 0.50-0.7 3 .8 0 +0.15 1.50 -0.15 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High-speed switching. Unit: mm +0.1 -0.1 +0.15 5.55 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 0.127 max +0.25 2.65 -0.1

2SB935

Abstract: 2SB935A
Contextual Info: Power Transistors 2SB935, 2SB935A Silicon PNP epitaxial planar type 3.4±0.3 8.5±0.2 Unit: mm 6.0±0.5 1.0±0.1 0.8±0.1 0.5max. 2.54±0.3 Absolute Maximum Ratings TC=25˚C 2SB935 –50 –20 VCEO emitter voltage 2SB935A –40 V VEBO –5 V Peak collector current

Contextual Info: Product specification 2SB935 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1

2SB935

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB935 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15

Contextual Info: Power Transistors 2SB935, 2SB935A Silicon PNP epitaxial planar type 3.4±0.3 8.5±0.2 Unit: mm 6.0±0.5 1.0±0.1 • Features Low collector to emitter saturation voltage VCE sat High-speed switching N type package enabling direct soldering of the radiating fin to

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SC4714

Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F

2SB909

Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

B1548

Abstract: 2SB1299A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SB927

Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M
Contextual Info: - 66 - T a = 2 5 cC , *EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc* w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

sa1306

Abstract: 2SB793 2sb1370 2SA1306 2SB1186B 2SB1085B 2SA1770 2SA1175 2SA1306A 2SB1212
Contextual Info: - m « Type No. 2SB m 8 6 > 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 S8 2SB 2SB 2SB 2 S8 2SB 2SB 2SB 2SB tt □—A □- A 1186A 118 7 / □— A □— A 1188 / □—A 1189 y 119 0 fé T 113 0A *2 T 1191

b0246

Abstract: PH2955T 045H2 SMCP055 SGS-Ates B0246A B0-246 MJE2955T ST MJE2901K MJE2955K
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 SOT3805 SOT3825 SOT3825 SOT3825 SOT3105 SOT3115 SOT3125 ST29051 ~gH~g~ 35 40 SOT3807 SOT3827 SOT3827 SOT3827 2SB871A 2SB936A 2SB948A 2SB896A ~~~~~~~ 45 50 SK3183 BOW22 B0664 B0664 B0246 B0206

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,