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    2SC1658 Search Results

    2SC1658 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC1658 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC1658 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC1658 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC1658 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC1658 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC1658 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC1658 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC1658C NEC NPN Silicon High Speed Switching Transistor Scan PDF

    2SC1658 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC1658C Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V)10 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)10


    Original     		PDF 2SC1658C

    2sc1695

    Abstract: 2SC1694 2SC1693 2sc1696 2sc1700 2sa835 2sc1611 2SC1699 2SC1648 2SC1616
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) DC Current Gain VCBO VEBO Ic Pc Tj fab/ft* Cob hFE PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SC1601 35 100 200 175 150 6 1 200* 2 2SC1602 35 100 150 125


    Original     		PDF 2SC1601 2SC1602 2SC1603 2SC1604 2SC1605 2SC1605A 2SC1606 2SC1607 2SC1608 2SC1609 2sc1695 2SC1694 2SC1693 2sc1696 2sc1700 2sa835 2sc1611 2SC1699 2SC1648 2SC1616

    2SC1957

    Abstract: 2SC2407 2SC2101 2SC1943 2SC1914A 2SC1971 2sc2098 2SC2229 2SC2329 2SC3800
    Text: - m « Type No. tt 2SC 1935 Ìd r ìl 2SC 1936 m ir i! 2SC 1937 ̱ il 2 SC 1938 «± a 2SC 1939 • ± il 2SC 1940 < •- a a 2SC 194 ^ b a a sl 2SC 1942 % Manuf. — 2SC 1943 SANYO M £ TOSHIBA H * tSO 1945,. 3 « 2SC2909 tenonin ù O K /ùJIV Jx 2SC1658


    OCR Scan     		PDF 2SC1912 2SC1658 2SC1911 2SCZ909 2SC2229 2SD666A 2SC1567A 2SC1957 2SC2407 2SC2101 2SC1943 2SC1914A 2SC1971 2sc2098 2SC2229 2SC2329 2SC3800

    2SC144

    Abstract: 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A
    Text: - 126 - m € T y p e No. Manuf. SANYO 3í 2 T O SHIBA B NEC B HITACHI ti S i l F U J ITSU ta t MATSUSHITA m ' h MITSUBISHI □ - A ROHM 2SC 1898 Ü3 r B $ f 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC 1899 SrBÍS 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC1845


    OCR Scan     		PDF 2SC2839 2SC1393 2SC1S55 2SC1047 2SC180S 2SC1855 2SC1809 2SC144 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    Untitled

    Abstract: No abstract text available
    Text: NEC NE98108 NE98141 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: f ï = 7 GHz The NE981 series of NPN silicon transistors is designed for microwave amplifiers up to 6 GHz and ultrahigh speed


    OCR Scan     		PDF NE98108 NE98141 NE981 NE98141 s-117

    2SC1730

    Abstract: 2SC1688 2SC1740A 2SC1673 2SA933LN 045PG 2SC1708 2SC1661 2SC1654 2SC1655
    Text: - 108 - Ta=25sC, *EPÎïTc=25‘ C *± 2SC1653 2SC1654 £ BM BM BW. m 1% VcBO Vc e o Ic(DC) Pc (V) (V) (A) (W) Pci (W) fs. m hF E I.CBO, (max) V'c b (V) (Uh) (min) (Ta-25T!) w t ( (max) ic/ÎE (A) VCE (V) [*EPiÎtyp{g] VcE(sat <,max) (V) (V) le (A) 1e (A)


    OCR Scan     		PDF 2SC1653 2SC1654 2SC1655 2SC1655A 2SC1656 2SC1657 2SC1658 102C2C1B1E1 2SC1731 2SC1732 2SC1730 2SC1688 2SC1740A 2SC1673 2SA933LN 045PG 2SC1708 2SC1661

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711