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    Panasonic Electronic Components 2SC19530S

    TRANS NPN 150V 0.05A TO126B-A1
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    2SC1953 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC1953 Panasonic NPN Transistor Original PDF
    2SC1953 Panasonic Silicon NPN epitaxial planar type Original PDF
    2SC1953 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC1953 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC1953 Unknown Silicon NPN Transistor Scan PDF
    2SC1953 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC1953 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC1953 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC1953 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC1953 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC1953 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC1953 Unknown Cross Reference Datasheet Scan PDF
    2SC1953 Panasonic Silicon NPN Epitaxial Planar Power Transistor Scan PDF
    2SC19530S Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN HF 150VCEO 50MA TO-126 Original PDF
    2SC1953Q Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF
    2SC1953R Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF
    2SC1953R Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF
    2SC1953S Panasonic NPN Epitaxial Planar Silicon Transistors Scan PDF
    2SC1953T Panasonic NPN Epitaxial Planar Silicon Transistors Scan PDF

    2SC1953 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA914

    Abstract: 2SC1953
    Text: Product Specification www.jmnic.com 2SA914 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1953 ・Good linearity of hFE ・High VCEO APPLICATIONS ・For audio frequency power pre-amplifier PINNING PIN DESCRIPTION


    Original     		PDF 2SA914 O-126 2SC1953 -30mA -100V; -10mA 2SA914 2SC1953

    2SA0914

    Abstract: 2SC1953
    Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type Unit: mm For low-frequency power pre-amplification Complementary to 2SA0914 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 4.6±0.2 Symbol Rating Unit VCBO 150 V Collector to emitter voltage VCEO 150


    Original     		PDF 2SC1953 2SA0914 2SA0914, O-126B 2SA0914 2SC1953

    2SC1953

    Abstract: 3202 a ic
    Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type Unit: mm For low-frequency power pre-amplification Complementary to 2SA0914 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 4.6±0.2 Symbol Rating Unit VCBO 150 V Collector to emitter voltage VCEO 150


    Original     		PDF 2SC1953 2SA0914 2SA0914, O-126B 200MHz 2SC1953 3202 a ic

    2SA0914

    Abstract: 2SA914 2SC1953
    Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)


    Original     		PDF 2SA0914 2SA914) 2SC1953 O-126B-A1 2SA0914 2SA914 2SC1953

    2SA0914

    Abstract: 2SC1953
    Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type For audio system/pre-drive Complementary to 2SA0914 Unit: mm 8.0+0.5 –0.1 3.2±0.2 0.75±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 0.5±0.1 4.6±0.2 Rating 0.5±0.1 1 VCBO 150


    Original     		PDF 2SC1953 2SA0914 O-126B-A1 2SA0914, 2SA0914 2SC1953

    2SA0914

    Abstract: 2SA914 2SC1953
    Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type Unit: mm For low-frequency power pre-amplification Complementary to 2SA0914 2SA914 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 4.6±0.2 Symbol Rating Unit VCBO 150 V Collector to emitter voltage


    Original     		PDF 2SC1953 2SA0914 2SA914) 2SA0914, O-126B 2SA0914 2SA914 2SC1953

    2SA914

    Abstract: 2SC1953
    Text: Inchange Semiconductor Product Specification 2SA914 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC1953 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency power pre-amplifier PINNING PIN DESCRIPTION


    Original     		PDF 2SA914 O-126 2SC1953 -30mA -100V; -10mA 2SA914 2SC1953

    2SA0914

    Abstract: 2SA914 2SC1953
    Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 Symbol 1.9±0.1 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2 Collector-base voltage (Emitter open) VCBO −150


    Original     		PDF 2SA0914 2SA914) 2SC1953 O-126B-A1 2SA0914 2SA914 2SC1953

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type For audio system/pre-drive Complementary to 2SA0914 Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 0.5±0.1 4.6±0.2 Rating 16.0±1.0


    Original     		PDF 2SC1953 2SA0914

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 Symbol 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2 Collector-base voltage (Emitter open) VCBO −150 V Collector-emitter voltage (Base open)


    Original     		PDF 2SA0914 2SA914) 2SC1953

    2SC1953

    Abstract: power transistors semiconductor product 2SA914 NPN Power Transistors
    Text: SavantIC Semiconductor Product Specification 2SC1953 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


    Original     		PDF 2SC1953 O-126 2SA914 -10mA 2SC1953 power transistors semiconductor product 2SA914 NPN Power Transistors

    2SA0914

    Abstract: 2SA914 2SC1953
    Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 1.9±0.1 0.75±0.1 Symbol Rating Unit Collector to base voltage


    Original     		PDF 2SA0914 2SA914) 2SC1953 O-126B-A1 2SA0914 2SA914 2SC1953

    2SA0914

    Abstract: 2SA914 2SC1953
    Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol 1.9±0.1 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2


    Original     		PDF 2SA0914 2SA914) 2SC1953 O-126B-A1 2SA0914 2SA914 2SC1953

    POWER TRANSISTORS

    Abstract: 2SC1953 semiconductor product 2SA914
    Text: Inchange Semiconductor Product Specification 2SC1953 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


    Original     		PDF 2SC1953 O-126 2SA914 -10mA POWER TRANSISTORS 2SC1953 semiconductor product 2SA914

    2SA0914

    Abstract: 2SA914 2SC1953
    Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol 1.9±0.1 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2


    Original     		PDF 2SA0914 2SA914) 2SC1953 O-126B-A1 2SA0914 2SA914 2SC1953

    2SA0914

    Abstract: 2SC1953
    Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type For audio system/pre-drive Complementary to 2SA0914 Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Collector-emitter voltage Base open


    Original     		PDF 2SC1953 2SA0914 O-126B-A1 2SA0914 2SC1953

    common base amplifier circuit designing

    Abstract: common base amplifier circuit common collector amplifier circuit designing common emitter amplifier common emitter amplifier circuit designing TO-220 packing methods 2SA0914 2SC1953
    Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type For audio system/pre-drive Complementary to 2SA0914 Unit: mm 8.0+0.5 –0.1 3.2±0.2 0.75±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 0.5±0.1 4.6±0.2 Rating Collector-base voltage Emitter open


    Original     		PDF 2SC1953 2SA0914 2SA0914, O-126B common base amplifier circuit designing common base amplifier circuit common collector amplifier circuit designing common emitter amplifier common emitter amplifier circuit designing TO-220 packing methods 2SA0914 2SC1953

    2SA914

    Abstract: 2SC1953
    Text: Power Transistors 2SA914 2SA914 Silicon PNP Epitaxial Planar Type • Package Dimensions AF Power Pre-amplifier Complementary Pair with 2SC1953 ■ Features • Good linearity of DC cu rre n t gain • High collector-em itter voltage V (Iife ceo ) • Low collector output capacitance (Cot)


    OCR Scan     		PDF 2SA914 2SC1953 O-126 100MHi 2SA914 2SC1953

    2SA914

    Abstract: 2SC1953
    Text: Power Transistors 2SA914 2SA914 Silicon PNP Epitaxial Planar Type • Package Dimensions AF Power Pre-amplifier Complementary Pair with 2SC1953 ■ Features • Good linearity of DC current gain Iife • High collector-emitter voltage (Vceo) • Low collector output capacitance (C„b)


    OCR Scan     		PDF 2SA914 2SC1953 100MHi 2SA914 2SC1953

    sC4633

    Abstract: 2sc1947 2sc1949 2SC1969 2sc1972 2sc1971 SC-4633 2SC1940 2SC1914A 2SC1913A
    Text: - 112 - <Ta=25‘C.*EP àïc=25<C m 2SC1913A 2SC1914A 2SC1921 2SC1922 2SC1923 2SC1924 2SC1925 2SC1926 2SC1927 2SC1929 2SC1941 2SC1942 2SC1944 2SC1945 2SC1946 2SC1946A 2SC1947 2SC1949 2SC1952 2SC1953 2SC1955 2SC1959 2SC1965 2SC1965A 2SC1966 2SC1967 2SC1968A


    OCR Scan     		PDF 2SC1913A 2SC1914A 2SC1921 2SC1922 2SC1923 2SC1924 2SC1925 2SC1955 2SA562TM O-92JÃ sC4633 2sc1947 2sc1949 2SC1969 2sc1972 2sc1971 SC-4633 2SC1940 2SC1913A

    2SC2720

    Abstract: 2SC2720-A 2SD772 nec 2SC3S31 2SC3098 2SC3358 2SC3531 2SC1730 nec 2sd772 2SC3110
    Text: - M £ tt € Manuf. Type No. 2SC 3786 / H 2SC 3 7 8 7 / " = 2SC 3788 = ft ft 2SC 3 7 8 9 ^ = 2SC 3790 = B * SANYO TOSHIBA 'S NEC B tL HITACHI ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — b. ROHM 2MJ1Z7Ö 2SD1692 $ * 173 2SC1953 2SC3620 2SC2682 2SC2258


    OCR Scan     		PDF 2SD1692 2SD1276 2SC1953 2SC3620 2SC2682 2SC2258 2SC3271F 2SC2688 2SC1501 2SC2720 2SC2720-A 2SD772 nec 2SC3S31 2SC3098 2SC3358 2SC3531 2SC1730 nec 2sd772 2SC3110

    2SC1953

    Abstract: 2SA914 h11a
    Text: Power T ransistors 2SG1953 2SC1953 Silicon NPN Epitaxial Planar Type ;• Package Dimensions AF Power Pre-Amplifier Complementary Pair with 2SA914 ■Features • High cd llector-em itter voltage V ceo • Small collector output capacitance (C„b) • Optimum for 60—100W p re-d riv er in com plem entary pair w ith 2SA914


    OCR Scan     		PDF 2SG1953 2SC1953 2SA914 001b3bb 2SC1953 2SA914 h11a

    2SA914

    Abstract: 2SC1953
    Text: PANASONIC INDL/ELEKiSEMI} 75C D J 1^35654 □00fl77feJ □ h *_ T ‘ 5 3 " 7 2SA914 2SA914 '> iJ zj > PN P x fcf£ ^r'> 7 Jl^y Is PNP Epitaxial Planar '(g;^;SWi HU liltiffl/AF Power Pre-amplifier 2SC1953 >J/Complementary Pair with 2SC1953 • ^/Features


    OCR Scan     		PDF 0Dfl77t, 2SA914 2SC1953 2SC1953 100MHÃ 2SA914

    2SC1953

    Abstract: 2SA914 2SG1953
    Text: Power Transistors 2SG1953 2SC1953 Silicon N P N Epitaxial P lan ar Type A F Pow er Pre-A m plifier C om plem entary Pair with 2 S A 9 1 4 P ackage Dim ensions . • F eatures • High cdllector-emitter voltage V ceo • Small collector output capacitance (C„b)


    OCR Scan     		PDF 2SG1953 2SC1953 2SA914 0--100W --10mA, 200MHz 132fl5E 001b3bb 2SC1953 2SA914 2SG1953