2SC206 Search Results

2SA934

Abstract: 2SA934 transistor 2sc2060
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2060 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR z Power dissipation PCM: 0.75 W (Tamb=25℃) z Low saturation voltage (VCE(sat)=0.15V at 500mA) z Complementary pair with 2SA934

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2060 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR z Power Dissipation PCM: 0.75 z Low Saturation Voltage (VCE(sat)=0.15V at 500mA) z Complementary Pair with 2SA934

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2060 ＴＯ－９２ＭＯＤ TRANSISTOR（ NPN ） 1.EMITTER FEATURE Power dissipation PCM : 0.75 W（Tamb=25℃） Collector current ICM : 1 A Collector-base voltage

2SC2062

Abstract: 2SC2062B 2SC2062-C LEA100
Contextual Info: ROHM CO 4DE LTD » Di ODOSb'iö 2 13RHM js 7 > y X $ /Transistors 2SC2062 -T - 3 S - 2 ? V —m NPN y U 3 > ? - V > h > b y > y Z $ g i i l i & 7.^ High Gain Amp. & Switching

KT601

Abstract: 2SC1708 2SC2675 kt601am 2SC2089BL KT601A 2SC3328Y LOW-POWER SILICON NPN SM-150 diode 2SC1627Y
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 >= 20 2S0438 2S0875 2SC3359 2SC3359 2SC1198K 2S01782K A 2S01782K (A) 2SC2061 ~~~~ ~ t~~ ~~g~~~~ 25 30 Rohm Corp Rohm Corp Rohm Co Ltd Indust Mexi NECElecslnc NEC Corp JA Sanken Elec Rohm Co Ltd ~anyo E!ect

2sc2060

Contextual Info: Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SC2060 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.75 W (Tamb=25℃) 3. BASE Collector current 1 A ICM: Collector-base voltage 40 V V(BR)CBO:

Contextual Info: h ~7> V ^ $ /Transistors 2SC2063/2SC4039 NPN v 'J ä ä jm 0 * 0* A ä Z5 C 4 0 3 9 h 7 > y ^ ^ Epitaxial Planar N P N Silicon Transistors J i> Ä iS ll i f f l / R F Am plifier • Dimensions U n it: mm 1) (Cob= 1 .6 p F Typ.) 2) rbb- v * t'o • Features

2SC2060

Contextual Info: 2SC2060 2SC2060 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.75 W (Tamb=25℃) 3. BASE Collector current 1 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

2sa934

Abstract: 2sc2060
Contextual Info: MOE D ROHM CO LT» • TñSñ'm OQOShTS 1 ■ R H M 2SC2060 / T ransistors ; 2SC 20S0 — » ■ 7 T 2 7 - ; r Xb?$*ri/7JUyis-?M NPN 4 J ^3;tH,Illffi/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistor • i+Jfi \H£E3/Dim ensions U n it: mm

lc 4011

Contextual Info: 2SC2063M/2SC4011 I ' 7 > v ^ £ /Transistors 2SC 2063M 2S C 4011 I t : £=*•'> 7 ^ 7 ^ - ^ NPN Epitaxial Planar NPN Silicon Trannsistors ¡ÜJil>j£*Blliffl/R F Amplifier • M fé '+ ìiE I/D im e n s io n s Unit : mm •» ft (Cob= 1 .6 p F T y p .)

2SC2060

Abstract: 2SA934 transistor
Contextual Info: 2SC2060 TO-92MOD Transistor NPN TO-92MOD 5.800 6.200 1. EMITTER 1 2 3 2. COLLECTOR 8.400 8.800 3. BASE 0.900 1.100 0.400 0.600 Features 13.800 14.200 — Power dissipation PCM: 0.75 — Low saturation voltage (VCE(sat)=0.15V at 500mA) — Complementary pair with 2SA934

2SD2470

Contextual Info: 2SD2142 K / 2SC2062S 2SD2470 Transistors I High-gain Amplifier Transistor 32V, 12V 2SD2142K / 2SC2062S •F e atu res • A b so lu te maximum rating« (Ta=25°C) 1 ) Darlington connection for a high hre. (Min. 5 0 0 0 at V ce /Ic =3 V /0 .1 A ) 2 ) H igh input im pedance.

ulma 200

Contextual Info: 2SC2068 ss 100 30 0.3 a 5 C O L L E C T O R - E M I T T E R VOLTAGE v C E sat ~ COLLECTOR CURRENT V CE ^ V ) Ic 50 (mAJ Tc COMMON E MITT E R IC/ IB = 1C To.<= 25"C «J to < o Q3 30 50 Q5 COLLECTOR CURRENT T O S H I B A C O R P O R A T I O N Ic (mA) 30 200 500

2SC2063

Abstract: 2SC4039
Contextual Info: V ROHM CO LTD' 4QE - D El 7 Û S ê cH cJ O Q D S 7 Q D h 7 > V ^ 5 / T ransistors 7 BRHfi 2SC2063/2SC4039 7 ^ 3 /-/7 2 S C 2 0 6 3 v 'j3 > h 7 > v ^ Amplifier Epitaxial Planar NPN Silicon Transistors • • 8 :1 iM&^JiBl/Dim ensions Unit: mm (C ob= 1 .6 p F Typ.)

2SD2470

Abstract: 2SD2142K 2SC2062S
Contextual Info: Transistors 2SD2142K / 2SC2062S 2SD2470 94L-570-D25 (SPEC-D230) 316 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

2SC288A

Abstract: 2SC202 2sc281 2SC233 2SC274 2SC273 2sc257 2SC219 2SC225 2sc246
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SC201 20 300 650 2SC202 80 300 650 2SC203 40 200 350 2SC204 30 5 200 350 2SC205 80 200 350 2SC206 20 2 25 200 2SC207 20 3 25 200 2SC208 20 3 25 200 2SC209 20 3 25 200 2SC210

B0815

Abstract: csc2821c bd817 B0817 2SC2068 2SC2068R 2SC2068Y BF858 BF859 CSC2611
Contextual Info: TO-202 PLASTIC PACKAGE TRANSISTORS NPN No. 2SC2068 'C B O V CBO V ECO V EBO (V) (V) (V) (PA) Min Mir Min Max 300 300 5.0 1.0 « vCB hFE 300 300 5.0 1.0 Min 240 240 300 300 5.0 1.0 2SC2068Y 300 300 5.0 1.0 120 BF859 300 300 5.0 0.1 CSC2611 300 300 5.0 CSC2621

2sc2060

Abstract: TO 92L NPN Transistor 2SA934 transistor
Contextual Info: 2SC2060 TO-92L Transistor NPN TO-92L 1. EMITTER 4.700 5.100 2. COLLECTOR 7.800 8.200 3. BASE 1 Features 2 3 0.600 0.800 — Power dissipation PCM: 0.75 — Low saturation voltage (VCE(sat)=0.15V at 500mA) — Complementary pair with 2SA934 W (Tamb=25℃) 0.350

transistor bc 570

Contextual Info: 2SC2062 h -y > '> Z $ /T ra n s is to rs 2 S C 2 6 2 * - u> k> * * Epitaxial Planar NPN Silicon Darlington Transistor ¡Hf,Jf#*Blii/H ig h Gain Amp. • £Hfê‘+ Ü 0 ,/D in ie n s io n s (Unit : mm) 1) h > » « •? * h F E T *5 o 4.8± 0.2 hFE= 5000 (M in.)

2SC2063

Abstract: 2063M
Contextual Info: 2SC2063M/2SC4011 h "7 > V X $ / T ransistors 2SC 2063M 2SC4011 X tr 5 # > 7 \s7° U - ^JfcNPN ¡M 3& 4M SÆ /R F Amplifier Epitaxial Planar NPN Silicon Transistors £ W Ì\H iE I/D im e n s io n s Unit : mm) (Cob= 1.6p F Typ.) 2) rbb'^/Jv éf < , a f l J Î l T ' ^ & Î Î l É ^ J:

2SC2060

Abstract: 2SA934 2SC2060 Q transistor 2SC2060
Contextual Info: 2SC2060 h 7 > v ^ £ /Transistors « w w w Epitaxial Planar NPN Silicon Transistor /Medium Power Amp. • • ft* 1 jiE l/D im e n s io n s Unit : mm) P c A ''* il'o S .8 ± 0 .2 4.8 ±0.2 PC =750m W 2) VcE(sat)*'' < LTl' 5 0 V c E (s a t)= 0 .1 5 V (Typ.)

2SC2061

Contextual Info: h 7 > y X ^ / T ransistors 2SC2061 2SC2061 NPN '> U = 1 > 43ï ^ 3 ^ lliffl/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistor • £1-Jfi"\t'5ilH/Dimensions Unit : mm 1 ) ra ifilŒ T 'Æ > -5 (V c e o = 8 0 V ) o 2) "7 "Is V x $ (lc = 7 0 0 m A )o

Contextual Info: 2SD2142K / 2SC2062S 2SD2470 Transistors High-gain Amplifier Transistor 32V, 12V 2SD2142K / 2SC2062S I •F e a tu re s 1 ) Darlington connection for a high Fif e . (Min. 5000 atVcE/lc~3V/0.1A) 2 ) High input impedance. •A b s o lu te maximum ratings (Ta—2 5 t )

2SA934

Abstract: 2SA934 transistor 2sc2060
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SC2060 TRANSISTOR NPN 1. EMITTER FEATURE z Power dissipation PCM: 0.75 z Low saturation voltage (VCE(sat)=0.15V at 500mA) z Complementary pair with 2SA934