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    2SC2530 Search Results

    2SC2530 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2530 Fujitsu Silicon High Speed Power Transistors, NPN Ring Emitter Transistor (RET) Scan PDF
    2SC2530 Fujitsu Silicon High Speed Power Transistor Scan PDF
    2SC2530 Fujitsu Silicon High Speed Power Transistor Scan PDF
    2SC2530 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2530 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2530 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2530 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2530 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2530 Unknown Cross Reference Datasheet Scan PDF
    2SC2530 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2530 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2530 Unknown The Japanese Transistor Manual 1981 Scan PDF

    2SC2530 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2530

    Abstract: 2SA1080
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1080 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -40V(Min.) ·Good Linearity of hFE ·Complement to Type 2SC2530 APPLICATIONS ·Designed for medium power amplifier applications.


    Original     		PDF 2SA1080 2SC2530 -10mA; -10mA 10MHz 2SC2530 2SA1080

    Untitled

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1080 IP \ i PIN 1.BASE 2.COLLECTOR DESCRIPTION 3. EMITTER • Collector-Emitter Breakdown Voltage- TO-220C package


    Original     		PDF 2SA1080 O-220C 2SC2530 -10mA; -10mA 10MHz

    2sa1046

    Abstract: 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2sa1066 2SA1094 2SA1027 2SC2525 2SC2375
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1001 -130 -4.5 -8A 80W(Tc=25ºC) 150 100 -5 -500 40* 350


    Original     		PDF 2SA1001 2SA1002 2SA1003 1602SA1004 2SA1005 2SA1006 2SA1006A 2SA1006B 2SA1007 2SA1096 2sa1046 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2sa1066 2SA1094 2SA1027 2SC2525 2SC2375

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    2sa 940

    Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu
    Text: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are


    OCR Scan     		PDF 2SC2530 35MHz 2sa 940 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu

    2SC2530

    Abstract: No abstract text available
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC2530 Silicon High Speed Power Transistor DESCRIPTION T h e 2S C 2 5 3 0 is a silicon N P N M .C .*H e ad a m p lifie r use transistor fabricated w ith Fujitus's unique Ring E m itte r Transistor R E T technology. R E T devices are


    OCR Scan     		PDF 2SC2530 300ns 2SC2530

    2SC2530

    Abstract: balast fujitsu ring emitter TRANSISTOR 2SC fujitsu transistor transistor 2SC2530 OL14 2sa fujitsu
    Text: FUJITSU MIC ROELEC TRON ICS 31E D E3 374*J7b2 ÜDlbSSb 2 ES FMI January 1990 Edition 1.1 : FUJITSU P R O D U C T P R O F IL E : 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with


    OCR Scan     		PDF 2SC2530 35MHz T-33-09 2SC2530 balast fujitsu ring emitter TRANSISTOR 2SC fujitsu transistor transistor 2SC2530 OL14 2sa fujitsu

    2SC2509

    Abstract: 2SC2541 2SC2534 2SC2499 2SC2539 2sc2547 2SC2495 2SC2510 2SC2530 2sc2555
    Text: - 126 - Ta=25QC, *EpííTc=25°C m 2SC2495-KA 2SC2495—MA 2SC2496A 2SC2497 2SC2497A 2SC2498 2SC2499 2SC2500 2SC2509 2SC2510 2SC2512 2SC2516 2SC2516A 2SC2517 2SC2518 2SC2522 2SC2523 2SC2527 2SC2528 2SC2530 2SC2532 2SC2534 2SC2535 2SC2538 2SC2539 2SC2540


    OCR Scan     		PDF 2SC2495-KA 2SC2495-MA 2SC2496A 2SC2497 2SC2497A 2SC2498 2SC2499 2SC2500 O-220ABÂ 2SC2535 2SC2509 2SC2541 2SC2534 2SC2539 2sc2547 2SC2495 2SC2510 2SC2530 2sc2555

    2SC2526

    Abstract: FT1551 2SA1075 2SA1076 2SA1250 2SC2428 2SC2431 FT2551 2SC2530 2SC2530 to-3
    Text: FUJITSU MICROELECTRONICS T? DE I 37Mci7ba D ü o n s s 5 3 7C Q .19 5 5 7^- <3 3 - Q /_ -_ 37 4 9 7 6 2 F u j i t s u m i c h o e l e c t r o n i c s 020000060101020100000048020202 F U J IT S U ! P1WEB Ï1 M S T 0 H LOW V O L T A G E HIGH SPEED POWER T R A N S IS T O R


    OCR Scan     		PDF 3iA97fa2 37MT7Ed5 2SC2530 2SA1080 O-220 FT1551 FT2551 2SC2528 2SA1078 2SC2526 2SA1075 2SA1076 2SA1250 2SC2428 2SC2431 2SC2530 to-3

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


    OCR Scan     		PDF S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2SC2494

    Abstract: 2SC2553 2SC2431 2SC2534 2SC2495 2SC2430 2SC2443 2SC2530 2sc2555 2SC2410S
    Text: - 124 - w X Ë f à m 2SC2410S 2SC2411K 2SC2412K 2SC2412KLN 2SC2413K 2SC2427 2SC2428 2SC2429 2SC2429A 2SC2430 2SC2431 2SC2432 2SC2433 2SC2434 2SC2437 2SC2438 2SC2440 2SC2442 2SC2443 2SC2458 2SC2458L 2SC2459 2SC2462 2SC2463 2SC2464 2SC2465 2SC2466 2SC2467 2SC2468


    OCR Scan     		PDF 2SC2410S 2SC2411K 2SC2412K 2SC2412KLN 2SC2413K 2SC2427 2SC2428 2SC2543 2SC2544 2SC2545 2SC2494 2SC2553 2SC2431 2SC2534 2SC2495 2SC2430 2SC2443 2SC2530 2sc2555

    HS 153 SP

    Abstract: 2SA1152 2SA1154 2SA1115 G 2sc2681 2sc2720 2SA1138 2sa1151 2sc2592 2SC2719
    Text: - 22 - T a = 2 5 U *EP(iTc=25^ m z m g & VcBO (V) 2SA1077 VCEO (V) Ic(DO (A) (W) % m Pc* Pc & 14 (Ta=25^) , Ic BO »ÜB (V) Itili) W (V) ic/lE (A) [*EP(ítypí l / . . (V) (V) « le (A) Ib (A) SN Reg/DDC/LF PA -120 -120 -10 60 -50 -120 60 200 -5 -1 -1.8


    OCR Scan     		PDF 2SA1077 2SA1080 2SA1081 2SA1082 SA1063 150mV O-92JB 2SA1137 2SC2676 2SA1138 HS 153 SP 2SA1152 2SA1154 2SA1115 G 2sc2681 2sc2720 2SA1138 2sa1151 2sc2592 2SC2719

    TO-220 JEDEC

    Abstract: 2SA1042 2SC2431 Jedec TO-3 FT2551 JEDEC
    Text: Section 1 Ring Emitter Transistors — At a Glance Devio# C a a a n a Polarity M axim um Rating« V c e o (V ) lc (A ) 1-3 2SA1041 2SA1042 2SC2431 2SC2432 JEDEC TO-3 PNP PNP NPN NPN -120 -70 120 70 -15 -15 15 15 1-7 2SA1043 2SA 1044 2SC2433 2SC2434 JEDEC TO-3


    OCR Scan     		PDF 2SA1041 2SA1042 2SC2431 2SC2432 2SA1043 2SC2433 2SC2434 2SA1072 2SA1072A 2SA1073 TO-220 JEDEC Jedec TO-3 FT2551 JEDEC