2SC2629 Search Results

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2629 NPN EPITAXIAL PLANAR TYPE DESCRIPTION O UTLINE DRAWING 2 S C 2 6 2 9 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band m obile radio applications. Dimensions in mm C 1 .5 M A X

2SC636

Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Contextual Info: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2629 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2629 is a silicon NPN epitaxial planar typ e transistor designed fo r RF power am plifiers in V H F band m obile radio applications. Dimensions in mm C 1 .5 M A X

2SC2629

Abstract: 2sc262 vco 17.5mhz
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2629 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2629 is a silicon NPN epitaxial planar typ e transistor designed fo r RF power am plifiers in V H F band m obile radio applications. Dimensions in mm C 1 .5 M A X

2SC635

Abstract: MHW820-1 2SC636 TP3008 sd1393 2sc1729 TP3034 SD1470 2SC2897 TP5051
Contextual Info: POWER RF CROSS REFERENCE INDUSTRY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642

2SC2897

Abstract: 2SC3660A SD1477 2SC2890 2SC2891 nec 2sc3660A 2sc635 2SC1804 2sc573 sd2900
Contextual Info: June 1999 ST CROSS REFERENCE WITH NEC INDUSTRY PART NUMBER 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 2SC2628 2SC2629

B0599

Abstract: PT9796A 2N5983 2N5862 2n5036 2N6368 B0301 tlp560 2N5037 acrian inc
Contextual Info: POWER SILICON NPN Item Number Part I C 5 10 Number 20 TIP57A TIP561 TIP58A TIP58A TIP58A FT413 FT413 TIP537 ~:~g • 25 30 BU207A BU208A BU412 BU412 BU411 BU411 40633 40633 ~~:~g 35 · 40 MJ4247 MRF240 J·ZER03055 2SC2629 S25-12 2N6368 PT9796 PT9796A ~~~~~~H

MRF648

Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Contextual Info: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

2SC1216

Abstract: sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2sc1364 2SC1368B 2SC2320L 2sc1162
Contextual Info: - 11 2 - ñ £ tt Type No. * 2SC 1343 H B 2SC 1344 B 2SC 1345 B 2SC 1345K « Manuf. a & h TOSHIBA 2SC1570 2SC732TM 2SC1842 2SC1570 2SC732TM 2SC1843 2SC2001 ÍI ÍL ÎL íL m b SANYO NEC 2SD734 2SC3419 * 2SC 1347 fé T 2SC2274 2SC3419 * 2SC 1354 fé T * 2 SC 1358

2SC2625

Abstract: 2SC2558-MA 2SC2559 2SC2559-MA 2SC2624 2SC2626 2sc2562 2SC2585 2sc2592 251C
Contextual Info: - 128 - Ta=25°C,*EDÍSTc=25^> M 2SC2556 £ fâT 2SC2556A 2SC2553-KA B U 2 S C 2 5 5 8 —M A an n nn œ. sn 2SC2559-KA 2SC2559-MA 2SC2562 2SC2570A s 2SC2585 fâ"F B€ 2SC2590 fâT 2SC2582 & £ 2SC2591 2SC2592 fôT 2SC2594 & T 2SC2603 VcBO Vce o (V (V)

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SC 143 SANYO

Abstract: nec 2651 2SC2283 2sc2317 2SC2570A 2SC1730 2sc2644 2SC2389 2SC2101 2SC2627
Contextual Info: - m % tt € Manuf. Type No. & H. SANYO 2SC 2627 / ~ 2SC 2828 " 2SC 2629 *<-• » M. Q TOSHIBA NEC 2SC2101 2SC2281 2SC2102 2SC2282 i HITACHI Sä ± il FUJITSU fé T MATSUSHITA z m MITSUBISHI * 2SC2420 2SC 2630 ^ H m 2SC2782 2SC 263 1 ta T 2SC2909 2SC 2632

2SC1668

Abstract: 2sc2894 2SC2166 2SC1907 2SD1226A 2SC1971 2sc1978 2SC693 2SC1842 2SC387A
Contextual Info: 94 - M £ Type No. tt £ m h Manuf. SANYO Ü 2 TOSHIBA 2SC 677 ^ % 2SC1617 2SC 678 •£. % 2SC1617 ÍL ÍL 2SC1617 2SC 679 * 2SC 681 ^ * 2SC 681A * 2SC 682 * 2SC 683 ED * " s i 2SC 684 * * 2SC 686 2SC 687 *» * * * 2SC 688 h 2SC 689 H e. * * 2SC 690A *

SC-1303

Abstract: 2SC1312 2SC1335 2SC1303 2Sc1327 2SC1328 2sc1740s 2sc4640 2sc1313 2SC1476
Contextual Info: - m % € Manuf. T y p e No. H $ SANYO TOSHIBA * 2 SC 1303 fö T * 2SC 13 0 4 3 2SC782 2SC934 1 m NEC i HITACHI * ± a tä T MATSUSHITA FUJITSU 2SC2323 =. s MITSUBISHI □ 111 — A ROHM 2SC2851 * 2SC 1306 1m 2SC1678 * 2 SC 1307 a 2SC2098 * 2SC 13 0 8 * 2 SC

2sc2538

Abstract: hpa b 110 2SC2S39 2SC5125 2sc4624 2SC2094
Contextual Info: 150MHz B and 13.5V S eries fo r M obile Radios <Tc = 25*C> Max. ratings Application 2SC20S3 HPA S ,NPN,EP VM ° 40 2SC1970 HPA S ,NPN,EP 40 2SC730 3K* V Structure •' - 0.3 4 0.6 & Rttv-c 5 + 150 25 fc /w 0.61 + 135 183 w 4 Pç W) Ve (min) {%) {«ax) i* A )