2SC27 Search Results

2SC3340

Abstract: 2SA1324 2SC3339 2SC3426
Contextual Info: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage

2SA1145

Contextual Info: 2SA1145 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS. • • • Complementary to 2SC2705. Small Collector Output Capacitance : C0b = 2.5pF (Typ.) High Transition Frequency : f'r = 200MHz (Typ.) M A X IM U M RATING S (Ta = 25°C)

hp 2503

Abstract: 2SC2713
Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2713 A U D I O FREQ UENC Y G E N E R A L A P P L IC A T IO N S PUR PO SE A M P L IF IE R Unit in mm + 0i5 2.5-0.3 + Û2 5 1.5— a 15 FEATURES : . High Voltage vCEO =120V Od . Excellent hpg Linearity +I ÊE- : hF E 0.1mA /hpE(2mA)=0.95(Typ.)

2SC2768

Contextual Info: JMnic Product Specification 2SC2768 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E 2SC2714 U nit in mm H IG H F R E Q U E N C Y A M P L IF IE R A P P L IC A T IO N S . F M , RF, M IX , IF A M P L IF IE R A P P L IC A T IO N S . +C12 5 1.3-015 FEATURES : • dd +l HO EE­ Small Reverse Transfer Capacitance: Cre = 0.7pF Typ.

2SC2216

Abstract: 2SC2717
Contextual Info: T O S H IB A 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 U nit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . High Gain : Gpe = 33dB Typ. (f=45M Hz) • Good Linearity of hpE- SYMBOL CHARACTERISTIC Collector-Base Voltage

2222J

Abstract: 2SC2707 2SA1147
Contextual Info: AOK AOK Semiconductor P roduct S pecification 2SA1147 S ilicon PNP Pow er T ransistors DESCRIPTION • W ith TO-3 package • High power dissipations • Complement to type 2SC2707 APPLICATIONS • For power switching amplifier and general purpose applications

2SC2738

Abstract: 25r-r
Contextual Info: PANASONIC INDL/ELEK -CIO 12E D • 1^35055 Q01Q4SS h Silicon NPN Triple Diffused Power Transistors r 33 os 2SC2738 NPN " TO-220 Package ) Absolute Maximum Ratings (Ta=25°G) ftem Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Collector Current

2sc2712

Abstract: C 029 Transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR „ 3 FEATURES 1 2 * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE

2SC2788

Contextual Info: Inchange Semiconductor Product Specification 2SC2788 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN

2SC2703

Contextual Info: 2SC2703 SILICON NPN EPITAXIAL TYPE PCT PROCESS A U D IO POW ER AMPLIFIER APPLICATIONS. • U n it in m m H ig h DC C u rre n t G ain : h p E = 1 00~ 320 M A X IM U M RATINGS (T a = 2 5 °C ) C H A RA CTERISTIC SYM BOL RATING U N IT C ollector-B ase V oltage

marking VA

Abstract: 2SC2776 marking va transistors
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2776 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

Contextual Info: SILICON NPN EPITAXIAL TYPE TRANSISTOR 2SC2712 Unit in mm A U D IO FR EQUENCY GENERAL PURPOSE AM PLIFIER APPLIC A TIO N S High Voltage and High Current : Vq eo = 50V, Ic = 150mA Max. • Excellent hj’E Linearity : hfE (Iq = 0.1mA) / hpE (Ic = 2mA) =0.95 (Typ.)

ic 5ma transistor

Abstract: RF POWER TRANSISTOR NPN 230MHZ VHF RF TRANSISTOR 2SC2736 CG transistor
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2736 DESCRIPTION •Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF~ VHF local oscillator, frequency converter. ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL PARAMETER

C2703

Abstract: 2SC2703
Contextual Info: 2SC2703 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2703 ○ 低周波電力増幅用 • 単位: mm 直流電流増幅率が高い。: hFE = 100~320 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧

2SC2712

Abstract: C1000-BL 2SA1162 SC 1000 BL
Contextual Info: 2SC2712 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC2712 ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 単位: mm • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) •

2SC2710

Abstract: 2SA1150
Contextual Info: 2SC2710 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2710 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • 2SA1150 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)

2SA1150

Abstract: 2SC2710
Contextual Info: 2SA1150 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1150 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC2710 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)

33PFX4

Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF
Contextual Info: TO SHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 80W Min. (f= 175MHz, V e e = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING

Contextual Info: 2SC2712 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw 1/4 12-Dec-2013 2SC2712 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics Symbol Min Typ Unit Max ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitter Saturation Voltage

2SC2791

Contextual Info: SavantIC Semiconductor Product Specification 2SC2791 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·High speed and high voltage switching ·Switching regulator ·High speed DC-DC converter

2SC2740

Contextual Info: SavantIC Semiconductor Product Specification 2SC2740 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High speed switching ·High VCBO ·Low saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1

2SC2792

Abstract: DC DC converter 50mA 400V
Contextual Info: SavantIC Semiconductor Product Specification 2SC2792 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·High breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator and high voltage ·Switching applications ·High speed DC-DC converter applications

2SC2761

Contextual Info: SavantIC Semiconductor Product Specification 2SC2761 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls PINNING See Fig.2 PIN DESCRIPTION