2SC2715 Search Results

2N2458

Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

2SC2715

Abstract: TRANSISTOR MARKING FA
Contextual Info: 2SC2715 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • + 0.5 2.5-0.3 + 0.25 High Power Gain : Gpe = 2dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2715 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR z z High Power Gain: Gpe=2dB(Typ.)(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV. IF Stage.

oscilator

Abstract: 2SC2715
Contextual Info: 2SC2715 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =600MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C

2SC2715

Contextual Info: ST 2SC2715 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g

2SC2715

Contextual Info: 2SC2715 SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in HIGH FREQUENCY AMPLIFIER APPLICATIONS. FEATURES : High Power Gain : Gpe = 2dB Typ. (f= 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage. CE­ C IM A X IM U M RATINGS (Ta = 25°C)

bfw34 diode

Abstract: 2SC562 BSX70 LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

2SC2715

Contextual Info: ST 2SC2715 NPN Silicon Epitaxial Planar Transistor for FM RADIO, MIX, CONV, OSC and IF amplifier . The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92 Plastic Package Weight approx.0.19g Absolute Maximum Ratings Ta = 25oC

2SC2715

Abstract: 2SC2715-Y 2SC2715-O 2SC2715-R
Contextual Info: 2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2715 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta = 25°C)

2SC2715

Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2715 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Recommended for FM IF, OSC stage and AM CONV. IF stage. 1 0.55 High power gain: Gpe = 2dB typ. (f = 10.7 MHz). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)

2SA1152

Abstract: 2SC2719 2SC2770 2SC2724 2SA1154 2SC2110 2SC2132 2SC2727 2SC2159 2SC2718
Contextual Info: - 132 - M X Ë f à Ta=25‘C, *£P(ÍTc=25‘C } m % & 2SC2712 2SC2713 2SC2714 2SC2715 2SC2716 2SC2717 2SC2718 2SC2719 2SC2720 2SC2721 2SC2724 2SC2727 2SC2731 2SC2732 2SC2733 2SC2734 2SC2735 2SC2736 2SC2738 2SC2739 2SC2740 2SC2749 2SC2750 2SC2751 2SC2752

marking AM sot-23

Abstract: 2SC2715
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2715 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR z z High Power Gain Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SC2715

Contextual Info: 2SC2715 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 HIGH FREQUENCY AMPLIFIER APPLICATIONS. + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 FEATURES : • High Power Gain : Gpe = 2dB (Typ.) (f = 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2715 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR z z High Power Gain Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

marking NF

Abstract: 2SC2715-O
Contextual Info: 2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2715 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC stage and AM CONV. IF stage. Absolute Maximum Ratings (Ta = 25°C)

2SC2715

Contextual Info: ST 2SC2715 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g

2SC2715

Contextual Info: ST 2SC2715 NPN Silicon Epitaxial Planar Transistor for FM RADIO, MIX, CONV, OSC and IF amplifier . The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92 Plastic Package Weight approx.0.19g Absolute Maximum Ratings Ta = 25oC

2SC2715

Contextual Info: 2SC2715 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • High Power Gain : Gpe = 2dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage. + 0.5

OSCILATOR

Abstract: cb sot23-3 2SC2715
Contextual Info: 2SC2715 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =600MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm o ABSOLUTE MAXIMUM RATINGS Ta=25 C

KZL 140 C

Abstract: 2SC2715
Contextual Info: 2SC2715 SILICON NPN EPITAXIAL PLANAR TYPE U nit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. + Oil Û255 1.5— FEATURES: High Power Gain : Gpe = 2dB Typ. (f = 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage. dd +1 HO EE- -e dci +1 M A X IM U M RATINGS (Ta = 25°C)

2SC2715M

Abstract: 30MHZ
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)

marking NF

Contextual Info: 2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2715 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC stage and AM CONV. IF stage. Absolute Maximum Ratings (Ta = 25°C)