2SC3072 Search Results

Contextual Info: 2SC3072 SILICON NPN EPITAXIAL T Y P E STROBO FLASH APPLICATIONS. Unit in iran MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES: . High DC Current Gain: hFE=140-~450 VCE=2V, IC=0.5A hFE=70(Min.) (VcE=2V, Ic =4A) . Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) (Ic=4A, Ib =0.1A)

Contextual Info: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •

2SC3072

Contextual Info: TO SH IBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 Unit in mm STROBE FLASH APPLICATIONS (A) MEDIUM POWER AMPLIFIER APPLICATIONS 6.8MAX., 5 .2 1 0 .2 r- • • • I 'l P in 0.6M AX. - t f - High DC Current Gain : hpE = 140~450

Contextual Info: T O SH IB A 2SC3072 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 MEDIUM POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hpE —140~450 (Vç e = 2V, I ç = 0.5A) h p E -7 0 (Min.) (Vç e = 2V, I ç = 4A)

2SC3072

Contextual Info: TOSHIBA 2SC3072 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hpE = 140~450 (VCE = 2V, IC = 0.5A) hFE = 70 (Min.) (VCE = 2 V, IC = 4 A)

C3072

Abstract: 2SC3072 c3072 npn
Contextual Info: 2SC3072 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3072 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (最小) (VCE = 2 V, IC = 4 A)

C3072

Abstract: c3072 npn 2SC3072
Contextual Info: 2SC3072 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3072 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (最小) (VCE = 2 V, IC = 4 A)

2SC3072

Abstract: C3072
Contextual Info: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •

c3072

Abstract: 2SC3072 c3072 npn
Contextual Info: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •

c3072

Abstract: 2SC3072 c3072 npn
Contextual Info: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) ·

c3072

Abstract: c3072 npn 2SC3072
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SC3072 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High DC current gain. +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1

transistor LT 5210

Contextual Info: TOSHIBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 Unit in mm STROBE FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS 6.8M A X (A ) • High DC Current Gain : = 140~450 (VCE = 2 V, IC = 0.5 A) 0.6 + 0.15 hFE = 70 (Min.) (VCE = 2 V, IC = 4A )

MAX12001

Abstract: 2sc3072
Contextual Info: TO SH IBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 Unit in mm STROBE FLASH APPLICATIONS (A) MEDIUM POWER AMPLIFIER APPLICATIONS 6.8MAX., 5.210.2 r- • • P in 0.6MAX. - t f - High DC Current Gain : hpE = 140~450 (\Tn-n

Contextual Info: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •

2SC3072

Abstract: C3072
Contextual Info: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •

2SC3072

Contextual Info: 2SC3072 SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS. M ED IUM PO W ER AMPLIFIER APPLICATIONS. • High DC C urrent Gain : hpE = 140-450 (Vc e = 2V, I ç = 0.5A) hFE = 70 (Min.) ( V = 2V, I = 4A) Low Collector Saturation Voltage

Contextual Info: TOSHIBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hpg = 140~450 (Vc e = 2 V, IC = 0.5 A) hFE = 70 (Min.) (Vc e = 2 V, Ic = 4A)

2SC3072

Contextual Info: TO SH IBA 2SC3072 T O S H IB A T R A N S IS T O R SIL IC O N N P N E P IT A X IA L T Y PE PCT PR O C ESS 2SC3072 S T R O B E FLASH A P P L IC A T IO N S M E D IU M P O W E R A M P L IF IE R A P P L IC A T IO N S • H igh DC Current G ain : h p g = 1 4 0 ~ 4 5 0

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current