2SC31 Search Results

2SC31

Abstract: m15t
Contextual Info: 2SC31 22 SILICQN NPN EPITAXIAL PLANAR TYPE t r a n s is t o r T V V H F RF A M P LIF IE R A PP LIC A T IO N S . FEATURES : • High Gain : Gpe = 24dB Typ. (f=200M Hz) • Low Noise : NF = 2.0dB (Typ.) (f=200MHz) • Excellent Forward AGC Characteristics.

1SV211

Abstract: 2SC2348 2SC2347 3SK240 1SV259 2SC382 3SK146 3SK275
Contextual Info: Transistors & Diodes for TV Receiver Tuner F5 ~ ~ '^ Ç » ck a g e A p p lic a tio n -^ TO-92 Super Mini SC-59 USM (SC-70) SMQ (SC-61) SSM RF 3SK146 3SK207 3SK153 3SK232 #3SK240 3SK249 2SC3828 #3SK250 3SK259 2SC4214 MIX 2SC3121 2 SC4246 2SC3120 2SC4245

2SC3136

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR -2SC3136 TV VHF M IX E R A PPLICATIONS. • • U n i t in m m High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) M A X IM U M RATIN GS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

RF POWER TRANSISTOR NPN

Abstract: 15 w RF POWER TRANSISTOR NPN RF TRANSISTOR 2SC3123 vhf high gain transistor ic 5ma transistor high gain low capacitance NPN transistor
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3123 DESCRIPTION •High Conversion Gain Gce = 23dB TYP. ·Low Reverse Transfer Capacitance Cre = 0.4pF TYP. APPLICATIONS ·Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS Ta=25℃

2SC3121

Abstract: 30MHZ
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3121 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Exellent Linearity 0.55 High Transition Frequency :fT=1500MHz Typ. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

2SC3163

Contextual Info: Inchange Semiconductor Product Specification 2SC3163 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage ・High speed switching PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings Ta=25℃

2SA1265N

Abstract: 2SC3182 2SA1265
Contextual Info: Inchange Semiconductor Product Specification 2SA1265N Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC3182 ·2SA1265 with short pin APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA1265N

Abstract: 2SC3182 2SA1265
Contextual Info: JMnic Product Specification 2SA1265N Silicon PNP Power Transistors DESCRIPTION ・With TO-3P I package ・Complement to type 2SC3182 ・2SA1265 with short pin APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

Contextual Info: 2SC3124 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, VHF OSCILLATOR APPLICATIONS. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation

2SC3158

Contextual Info: JMnic Product Specification 2SC3158 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High voltage ・High switching speed APPLICATIONS ・For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-220F and symbol

2SA1249

Abstract: 2SC3117
Contextual Info: JMnic Product Specification 2SA1249 Silicon PNP Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2SC3117 ・High breakdown voltage ・Large current capacity APPLICATIONS ・For color TV sound output,converters, Inverters applications

2SC3149

Abstract: NPN 800V
Contextual Info: Product Specification www.jmnic.com 2SC3149 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage: VCBO=900V Min ・Fast switching speed. ・Wide ASO (Safe Operating Area) APPLICATIONS ・800V/1.5A switching regulator applications

2SC3645

Contextual Info: Type No. 2SA 1257 2S A 1415 2 S A 1418 2 S A 1419 2S A 1552 2 S A 1682 2S A 1700 2S A 1740 2S A 1772 2 S A 1773 2SC3143 2SC3645 2SC 3648 2SC 3649 2SC4003 2SC4027 2SC4412 2SC 4548 2SC4597 2SC 4598 2SC4599 2SC 4600 2SC4601 2SC 4602 2SC 4615 2SC 4616 FX510 Page

2SC3173

Contextual Info: SANYO SEMICONDUCTOR CORP 12E » I 7 CH 7 0 7 L , 0004311 7 T ' 53-11 2SC3173 NPN Epitaxial Planar Silicon Transistor 201OA C R T Display Horizontal Deflection Output Applications 1309B Features: ’ High switching speed • Especially suited for use in high-definition CRT display Vcc=6 to 12V

2SC3156

Contextual Info: Inchange Semiconductor Product Specification 2SC3156 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage : VCBO=900V Min ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications

2SA1249

Abstract: 2SA124 500ma 40v pnp *a1249 2SC3117 2sc311
Contextual Info: Inchange Semiconductor Product Specification 2SA1249 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC3117 ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color TV sound output,converters, Inverters applications

200MHZ

Abstract: 2SC3123 marking he
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3123 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Reverse Transfer Capacitance : Cre=0.4F TYP. 0.55 High Conversion Gain :Gce=23dB(TYP.) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

marking HB

Abstract: 2SC3120
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3120 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25

2SC3181N

Abstract: 2SA1264N
Contextual Info: Inchange Semiconductor Product Specification 2SC3181N Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・Complement to type 2SA1264N APPLICATIONS ・Power amplifier applications ・Recommend for 55W high fidelity audio frequency amplifier output stage

2SC3171

Abstract: SC-65
Contextual Info: Pow er Tra n sisto rs 2SC3171 2SC3171 Silicon PNP Triple-Diffused Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching Unit I mm 4.7 max. 15.5max._ 13.5max. ll.Omax. • Features • High sp eed switching 1 • High collector current <Ic

2SC3113

Contextual Info: 2SC3113 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 For Audio Amplifier and Switching Applications • Unit: mm High DC current gain: hFE = 600~3600 • High breakdown voltage: VCEO = 50 V • High collector current: IC = 150 mA max • Small package

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3104 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2 S C 3 1 0 4 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING Dimensions in mm cally designed for UHF power amplifier applications. FEATURES •

2SC3104

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3104 NPN E P IT A X IA L PLANAR TY PE DESCRIPTION 2 S C 3 1 0 4 is a silicon NPN epitaxial planar typ e transistor sp e cifi­ OUTLINE DRAW ING D im ension s m m m cally designed for U H F pow er am plifier applications. FEATURES

2SA1258

Abstract: 2SC3144
Contextual Info: Ordering number:ENN1058D PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SA1258/2SC3144 60V/3A for High-Speed Drivers Applications Features Package Dimensions • High fT. · High switching speed. · Wide ASO. unit:mm 2010C [2SA1258/2SC3144] 10.2 3.6