2SC331 Search Results

2sc3310

Contextual Info: 2SC3310 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in mm SW ITCH IN G REGULATOR A N D HIGH VOLTAGE SW ITCHIN G APPLICATIONS. HIGH SPEED D C-DC CONVERTER APPLICATIONS. • • Excellent Switching Times : tr =1.0//s (Max.), tf=1.0/us (Max.) at Iç = 4A

2SC3312

Abstract: 2SA1310 IC1006
Contextual Info: Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 3.0±0.2 4.0±0.2 • Features Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

Contextual Info: Sh T Ô S H IbI 'T M S C R E T E / O P T O } 9097250 TOSHIBA DISCRETE/OPTO DE | C]0E]72S0 □ □ □7 bT 3 " 56C 07 69 3 2SC3310 D f- SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING Unit in nun APPLICATIONS'.'

Contextual Info: Transistors 2SC3313 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 4.0±0.2 • Features • Optimum for high-density mounting • Allowing supply with the radial taping • Optimum for RF amplification of FM/AM radios 15.6±0.5

Contextual Info: 2SC3317 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-220AB Features High voltage,High speed switching High reliability Applications 1 : Base 2 : Collector Switching regulators Ultrasonic generators

Contextual Info: Transistors 2SC3313 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 4.0±0.2 0.8 3.0±0.2 2.0±0.2 • Optimum for high-density mounting • Allowing supply with the radial taping • Optimum for RF amplification of FM/AM radios

2SA1323

Contextual Info: Transistors 2SA1323 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3314 Unit: mm 4.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features 7.6 0.8 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • Allowing supply with the radial taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 (0.8) 0.75 max. 15.6±0.5

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1310 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC3312 Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5

2SA1309A

Abstract: 2SC3311A
Contextual Info: Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SC3311A Unit: mm 3.0±0.2 4.0±0.2 • Features marking Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage

2SC3312

Abstract: 2SC331 2SA1310
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 15.6±0.5 • Optimum for high-density mounting

2SC3315

Contextual Info: Transistors 2SC3315 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 4.0±0.2 • Features • Optimum for high-density mounting • Allowing supply with the radial taping • Optimum for RF amplification of FM/AM radios • High transition frequency fT

2SC3315

Contextual Info: Transistors 2SC3315 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 4.0±0.2 0.8 3.0±0.2 2.0±0.2 • Optimum for high-density mounting • Allowing supply with the radial taping • Optimum for RF amplification of FM/AM radios

2SA1309A

Abstract: 2SC3311A
Contextual Info: Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 (0.8) 0.75 max. 15.6±0.5 • Optimum for high-density mounting • Allowing supply with the radial taping

2SA1309A

Abstract: 2SC3311A
Contextual Info: Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SC3311A Unit: mm 3.0±0.2 4.0±0.2 • Features marking Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 15.6±0.5 d p lan inc ea se ed lud p lan m m es ht visi

2SA1310

Abstract: 2SC3312
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5

2SA1309A

Abstract: 2SC3311A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) Th an

Contextual Info: 2SC3319 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)600 I(C) Max. (A)10 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC3310

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3310 INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. 1013MAX HIGH SPEED DC-DC CONVERTER APPLICATION. 0 3 .2 ÍO.Z FEATURES: . Excellent Switching Times : t r = l .0,us Max. , tf=1. (Xus ( M a x .)

2SC3310

Abstract: 2SC331 npn transistors 400V 1A semiconductor product DC DC converter 5v to 400V
Contextual Info: Inchange Semiconductor Product Specification 2SC3310 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High collector breakdown voltage ・Excellent Switching times APPLICATIONS ・Switching regulator ・High speed DC-DC converter ・High voltage switching

2SC3317

Abstract: 60i2 TLO 071 & FILE
Contextual Info: 2SC3317 TRIPLE DIFFUSED PLANER TYPE N P I\l= M £ f» 7 V —i-m HIGH VOLTAGE, HIGH SPEED SWITCHING I Outline Drawings Features • High speed switching • ff ifif S t t High reliability : A p p lic a tio n s • X ' i 'y f - 's 'f i 'X i . i '—^ • Switching regulators

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max.

2SC3312

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5