2SC3474 Search Results

2sc3474

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC3474 INDUSTRIAL APPLICATIONS Unit in mm SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. &8MAX. FEATURES : . High DC Current: Gain : hFE=500 Min. (Ic=400mA) . Low Saturation Voltage: VcE(sat)=0 •5V(Max.) (Ic=300mA) 06±015

Contextual Info: T O S H IB A 2SC3474 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3474 SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SOLENOID DRIVE APPLICATIONS • • U n it in mm High DC Current Gain : hpE = 500 Min. (Iç = 400 mA) Low Saturation Voltage : VcE (sat) = 0.5 V (Max.) (Iç = 300 mA)

C3474

Abstract: 2SC3474
Contextual Info: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

C3474

Abstract: 2SC3474
Contextual Info: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

2SC3474

Contextual Info: 2SC3474 SILICON NPN EPITAXIAL TYPE INDUSTRIAL APPLICATIONS Unit in a SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. S8MAX. FEATURES : . High DC Current Gain : hFE=500 Min. (Ic=400mA) . Low Saturation Voltage: VcE(sat)=0-5V(Max.)(Ic=300mA) Û 9 5M A X .

b0239c

Abstract: diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N5000 2N5150 2N5602 2N5154 2N6717 92GU06 92PU06 B0379-16 ~~~~~ 30 SOT5513 SOT5513 SOT5913 B0379-25 2SC3474 2S01914 2S01981 SK3512 - :g~~:~ - 25 35 -40 45 -50 RCA1A03 S2N4863-2 S2N4863-3 SMl5509 SMl5514

Contextual Info: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

Contextual Info: 2SC3474 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

C3474

Abstract: 2SC3474
Contextual Info: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

C3474

Abstract: 2SC3474
Contextual Info: 2SC3474 東芝トランジスタ シリコンNPNエピタキシャル形 2SC3474 ○ スイッチング用 ○ ソレノイドドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 500 最小 (IC = 400 mA) • コレクタ•エミッタ間飽和電圧が低い。

Contextual Info: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

C3474

Abstract: 2SC3474
Contextual Info: 2SC3474 東芝トランジスタ シリコンNPNエピタキシャル形 2SC3474 ○ スイッチング用 ○ ソレノイドドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 500 最小 (IC = 400 mA) • コレクタ•エミッタ間飽和電圧が低い。

Contextual Info: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

C3474

Abstract: 2SC3474
Contextual Info: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

2SC3474

Abstract: 2U211
Contextual Info: TOSHIBA 2SC3474 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC3474 INDUSTRIAL APPLICATIONS SOLENOID DRIVE APPLICATIONS • • High DC Current Gain : hpE = 500 Min. (Iç; = 400 mA) Low Saturation Voltage : (sat) = 0.5 V (Max.) (Iç; = 300 mA)

2SC347

Abstract: 2SC3474
Contextual Info: TO SH IBA 2SC3474 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC3474 INDUSTRIAL APPLICATIONS SOLENOID DRIVE APPLICATIONS • • High DC Current Gain : hpE = 500 Min. (Iç; = 400 mA) Low Saturation Voltage : (sat) = 0.5 V (Max.) (Iç; = 300 mA)

2SC3474

Contextual Info: TOSHIBA 2SC3474 ? <;r 3 a.7 a. TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • High DC Current Gain : hpE = 500 Min. (Iq = 400 mA) • Low Saturation Voltage : V çje (sat) = 0.5 V (Max.) (10 = 300 mA)

2SC3474

Contextual Info: TO SH IBA 2SC3474 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC3474 SOLENOID DRIVE APPLICATIONS • • High DC Current Gain : hpE = 500 Min. (Iç; = 400 mA) Low Saturation Voltage : (sat) = 0.5 V (Max.) (Iç; = 300 mA) MAXIMUM RATINGS (Tc = 25°C)

SSG 23 TRANSISTOR

Contextual Info: TOSHIBA 2SC3474 TOSHIBA TRANSISTOR V SILICON IMPN EPITAXIAL TYPE W • M A■ SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm SOLENOID DRIVE APPLICATIONS. 6.8MAX A 0.6 MAX 5.2 ± 0 .2 _ i • H igh DC C u rre n t G ain : h p ^ —500 (Min.) (I(} = 400mA)

2sd1878

Abstract: 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431
Contextual Info: - 264 - m « tt € Type No. Manuf. SANYO ÍL ÍL ±L ÍL 2SD1403 « 2SD1841 2SD 2298 2SD 2299 2SD 2300 2SD 2301 2SD 2302 « ± 2SD 2303 « d t« m±wM 2SD 2304 n = 36 2 TOSHIBA 2SC3887A m NEC B ÍI HITACHI ± Ü FU JITSU fâ T MATSUSHITA 2SD1274D ZSU56Ö

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink