2SC36 Search Results

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 ST0R0B0 FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. Unit in ram . High DC Current Gain and Excellent hFE Linearity : hFE(l)=140~450 (VCE=2V, : h F E(2)=70(Min.) Ic =0.5A) (VC E=2V, IC=4A) . Low Saturation Voltage

Contextual Info: 2SC3607 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. 3.6 MAX . • Low Noise Figure, High Gain N F = l.ld B , |S2leP = 9-5dB f= 1.7 MAX. jg L MAXIMUM RATINGS (Ta = 25°C CHARACTERISTIC Collector-Base Voltage

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 AUDIO POWER AMPLIFIER APPLICATIONS. • High DC Current Gain: MAXIMUM RATINGS Unit in mm hpE=100~320 (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage v CBO 30 V Collector-Emitter Voltage VCEO

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3657 INDUSTRIAL APPLICATIONS U n i t in mm S W I T C H I N G R E G U L A T O R A N D HI G H V O L T A G E SWITCHING APPLICATIONS. 15.9M A X. HIGH SPEED DC-DC CONVERTER APPLICATION. ' FE ATURES: 7 . Excellent Switching Times

smd diode ua

Abstract: transistor smd marking 2SC3648
Contextual Info: Transistors SMD Type High-Voltage Switching Applications 2SC3648 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

marking mh

Abstract: 2SC3606
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC3606 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz 1 0.55 Low noise figure, high gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1

2SC3686

Contextual Info: Product Specification www.jmnic.com 2SC3686 Silicon NPN Power Transistors ESCRIPTION ・High breakdown voltage ・High reliability adoption of HVP process . ・Fast speed ・Adoption of MBIT process. ・With TO-3PN package APPLICATIONS ・Ultrahigh-definition color display horizontal

2SC3678

Contextual Info: Product Specification www.jmnic.com 2SC3678 Silicon NPN Power Transistors ESCRIPTION ・High Voltage Switching ・With TO-3PN package APPLICATIONS ・ Switching Regulator ・ General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SC3688

Contextual Info: JMnic Product Specification 2SC3688 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage ・High speed APPLICATIONS ・Ultrahigh-definition color display horizontal deflection output applications PINNING PIN DESCRIPTION

2SC3694

Abstract: 2SC369 TO-220FA
Contextual Info: Power Transistors www.jmnic.com 2SC3694 Silicon NPN Transistors Features BCE ﹒With TO-220Fa package ﹒High speed ,power switching applications Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage

ic power 22E

Abstract: power 22E IC 12E MARKING
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3607 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm FEATURES : 1.6MAX 4.6 MAX. . Low Noise Figure, High Gain. 0.4±a05 1.7MAX. . N F = 1 .ldB, IS21e l2=9.5dB f=lGHz MAXI M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC

2SC3609

Abstract: ic power 22E 12E MARKING power 22E power 22E IC power Ic 22e
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3609 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. + Q .2 2.9- a 3 FEATURES: • Low Noise Figure, High Gain. • N F=1.ldB, IS2 1 e |2=13dB f=lGHz +a25 MAXIMUM RATINGS 1 .5 0 — 0 .1 5 (Ta=25°C) h o CHARACTERISTIC

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3606 U nit in mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = l.ldB , |S2lel2= lld B f=lGHz M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage

2SA1482

Contextual Info: O rd e rin g n um b e r : EN 1 7 8 8 A N° 1788A II 2SA1418/2SC3648 P N P/N PN E p itax ial P la n a r Silicon T ran sisto rs S A t Y O High-Voltage Switching, _Predriver Applications A pplications . Color TV audio output, converter, in v e rter

2SC3645

Contextual Info: Type No. 2SA 1257 2S A 1415 2 S A 1418 2 S A 1419 2S A 1552 2 S A 1682 2S A 1700 2S A 1740 2S A 1772 2 S A 1773 2SC3143 2SC3645 2SC 3648 2SC 3649 2SC4003 2SC4027 2SC4412 2SC 4548 2SC4597 2SC 4598 2SC4599 2SC 4600 2SC4601 2SC 4602 2SC 4615 2SC 4616 FX510 Page

Contextual Info: ^O rd e rin g number . EN 2 0 0 5 A 2SA1416/2SC3646 NO.2005A PN P/N PN Epitaxial Planar Silicon Transistors SAiYO i High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity. . Fast switching time.

transistor NEC K 946

Abstract: C947 BU x460 2SC3618
Contextual Info: — S7 • $ /— h '> > ; = ! > t . 9 h S ilic o n T ra n s is to r 2SC3618 N 2SC 3618Ü , P N X t 0 ^ + 7 '> ; i / ^ ' > y ~7" '] "/ Y l C m A ' B ' < - v ' r - y ^ M m ^ W 7 > y X ? T", =1 > h h = 7 7 . 9 ^ - {i : mmj K 7 -i 1.5 + 0.1 M # 3 _ O h p E i ' ^ i 9 ÿ i3 ' C i s i l' ' ' o

Contextual Info: Ordering number:EN1637C NPN Triple Diffused Planar Silicon Transistor 2SC3638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.

Contextual Info: 2SA1418 / 2SC3648 Ordering number : EN1788B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1418 / 2SC3648 High-Voltage Switching, Preriver Applications Applications • Color TV audio output, inverter. Features • • •

Contextual Info: DATA SHEET SILICON TRANSISTORS 2SC3622, 3622A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA

Contextual Info: Ordering number:EN1614C NPN Triple Diffused Planar Silicon Transistor 2SC3636 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.

Contextual Info: 2SA1416 / 2SC3646 Ordering number : EN2005B SANYO Semiconductors DATA SHEET 2SA1416 / 2SC3646 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.

2SC361

Abstract: 2SC3617
Contextual Info: — S • S /— h ' > > ; = ] > S ilic o h = 7 > n T r a 7 n , s i s t o 9 r 2SC3617 2SC 3617l i '7" 'i ' > 9' X 9 T ' # i S K 7 -1" # îiffihpE 1- y K IC ffl/J "/ ^ ÏÏ^ H l ìp -iì • m m f t S T 't o i l l $ o ï Ô ~ Z Ï i w j '- '^ o O h p E ^ j^

2SC3644

Abstract: 777T
Contextual Info: O rd e rin g n u m b e r: EN 1628C N0.1628C 2SC3644 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition Display Horizontal Deflection Output Applications i oi i— Features • High reliability Adoption of HVP process . • High speed. • High breakdown voltage.