2SC4563 Search Results

2SC4411

Abstract: 2SC4563
Contextual Info: Ordering number:EN4728 PNP Epitaxial Planar Silicon Transistor 2SC4563 Ultrahigh-Definition CRT Display Video Output Applications Package Dimensions unit:mm 2010C [2SC4411] 10.2 3.6 4.5 5.1 2.7 1.3 18.0 15.1 • High fT : fT=1.2GHz typ. · High breakdown voltage : VCEO≥80V.

N4728

Abstract: 2SC4563 ITR07208 ITR07209 ITR07210 ITR07211 ITR07212 ITR07213 MA400A
Contextual Info: 注文コード No. N 4 7 2 8 2SC4563 No. N4728 21500 エピタキシァルプレーナ形シリコントランジスタ 2SC4563 特長 ・高 fT である：fT=1.2GHz typ。 ・高耐圧である：VCEO ≧ 80V。 ・大電流である：IC=500mA。 超高精細度 CRT ディスプレイ

2SC4411

Abstract: 2SC4563
Contextual Info: Ordering number:EN4728 PNP Epitaxial Planar Silicon Transistor 2SC4563 Ultrahigh-Definition CRT Display Video Output Applications Package Dimensions unit:mm 2010C [2SC4411] 10.2 3.6 4.5 5.1 2.7 1.3 18.0 15.1 • High fT : fT=1.2GHz typ. · High breakdown voltage : VCEO≥80V.

2SC4563

Contextual Info: Ordering n um b e r:E N 4 7 2 8 2SC4563 N o.4728 E p ita x ia l P la n a r Silicon T ra n sisto r SANYO i Very High-Definition CRT Display Video Output Applications F e a tu re s • H igh fT :fT = 1.2GHz typ. • H igh b reakdow n voltage : V q e o —80V.

4712 4723

Abstract: 2SC4933 2SC4566 2SC4717 4735 2SC2705 2Sc3468 2SC2242 2SC2688 2SC3611
Contextual Info: - m % Type No. tt « Manuf. h a m SANYO TOSHIBA m. NEC ±L HITACHI 'M dr il FUJITSU fâ T MATSUSHITA 2 2SC 4705 H ft 2SC 4706 X 1ty >r y 2SC3451 2 SC 4707 X S 2SC4485 2SC 4708 V tL 2SC4563 2SC 4712 cn 2 SC 4713 □ — a 2SC427Û 2SC3Ì22 2SC 4714 fò T 2SC4075

BX-1681

Contextual Info: Ordering number : EN 4728 _ 2SC4563 NPN Epitaxial Planar Silicon Transistor Ultrahigh-Definition CRT Display Video Output Applications F e a tu re s • High f j : fr = 1.2GHz typ. • High breakdown voltage : V c e O — 8 0 V . • High c u rre n t: Ic = 500mA.

40320

Abstract: 2sc497 2SA1849 2SA1752 2SC482 2SC3781 2SA1751 2sc4566
Contextual Info: SA0YO T r a n s i s t o r s for V e r y Hi gh-Def i ni t ion C R T D i s p l a y V i d e o O u t p u t Use Our transistors for CRT display use are fabricated using our original process technology. They are designed to meet the characteristic requirements for CRT use.

2SC3953

Abstract: TRANSISTOR T0220 2SC3597
Contextual Info: Horizontal deflection output composite transistor Absolute maximum ratings _ . I Package . Application T IT Vcbo Vcbo nn (V) HPA72R* T03PBL °"!fk (wilh high-speed damper diode) HPA100R T03PBL “ H PA.M T03PBL * “ “ “ Ä T Vceo Vceo lc >c Electrical characteristics (T, = 25 deg. C)

transistor 2SB1142

Abstract: sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788
Contextual Info: SA0YO M IC A LE SS T 0-126M L T R A N SIST O R S F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting ♦ Plastic-covered heat sink facilitating high-density mounting ♦ Increased collector dissipation when a transistor alone is operated

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2sc4496a

Abstract: 2SD3181 2Sc3246 2sc3928 2SC3209 4468 2SC2644 2SD1404 2SD773 2sc3514
Contextual Info: - SI « T y p e No. tt « Manuf. Z i# SANYO it 2? TOSHIBA ÌL 2SC4403 ÎL 2SC4854 2SC2644 2 SC 4468 ^ V- v i r v 2SD1047 2SC3182N 2SC 4469 * ± S 1 * 2SC 4470 * 2SC 4472 n —U — :í¿ 2SC 4473 _ 2SC 4474 3 # 2SC 4477 h m NEC HITACHI 2SC4478 ± Ä F U JITSU

smd transistor marking 12W

Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
Contextual Info: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3

Contextual Info: Electrical characteristics Ta = 25 Absolute maximum ratings Package type Device Applications VCBO (V VCEO (V) Vebo (V) ic (mA) PC <W) Icbo max @ Vcb A Icbo max (HA) Vcb (V) C) hFE @ VCE ' Ic h FE »T @ VcE * Ic fr VcE (V) ic (mA) (MHZ) VcE (V) Ic (mA) 2SC3954

2sa1850

Abstract: 2SC3953 2SA1723 2SA1848 2SC3956 2SA1849 2SC482 2SC3595 SANYO SC-62 2sc456
Contextual Info: T r a n s i s t o r s f o r V e r y H i gh-Def in i t i o n C R T D i s p l a y V i d e o O u t p u t Use Our transistors for CRT display use are fabricated using our original process technology. They are designed to meet the characteristic requirements for CRT use.

2SC4633

Contextual Info: Ultrahigh-resolution Display Video Output Transistors FBET Absoluto maximum ratings Type No. Packag* Ha* Bad iteli characteristics (Ta •25 TC) ICBO mut VCB Applications VCBO Veto VEBO 1C cw (V) (V) (mA) PC (W) db ICBOmax O.A) bFESVCE ■1C Vca (V) hFE

2SC4566

Abstract: 2sa1752 2SA1852 2SC3781 2SA1474
Contextual Info: SA0YO T r a n s i s t o r s for Ver y Hi gh-Def ini t i on C R T D i s p l a y V i d e o Output Use Our transistors for CRT display use are fabricated using our original process technology. They are designed to meet the characteristic requirements for CRT use.