2SC4742 Search Results

2SC4742

Contextual Info: Inchange Semiconductor Product Specification 2SC4742 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Built-in damper diode ・High breakdown voltage APPLICATIONS ・Character display horizontal deflection output applications PINNING PIN

2SC4742

Contextual Info: HITACHI 2SC4742 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output Feature TO-3P * H igh breakdown voltage V rE S ~ 1500 V • B u ilt-in dam per diode type Absolute Maximum R;ttings 'Ta = 25°C Item Symbol Rating Unit Collector to emitter voltage

Contextual Info: 2SC4742 Silicon NPN Triple Diffused HITACHI Application Character display horizontal deflection output Feature • High breakdown voltage V CES = 1500 V • Built-in damper diode type Outline T O -3 P 2 1. Base |'o O- 2. C o lle c to r F la n g e 3. E m itte r

2SC4742

Abstract: power diode specification
Contextual Info: Product Specification www.jmnic.com 2SC4742 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Built-in damper diode ・High breakdown voltage APPLICATIONS ・Character display horizontal deflection output PINNING PIN DESCRIPTION 1 Base 2

2SC4742

Contextual Info: 2SC4742 Silicon NPN Triple Diffused HITACHI Application Character display horizontal deflection output Feature • High breakdown voltage VCES = 1500 V • Built-in damper diode type Outline T O -3 P 2SC4742 Absolute Maximum Ratings Ta = 25 °C Item Symbol

2SC4742

Contextual Info: SavantIC Semiconductor Product Specification 2SC4742 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Built-in damper diode ·High breakdown voltage APPLICATIONS ·Character display horizontal deflection output applications PINNING PIN DESCRIPTION

2sc4742

Contextual Info: 2SC4742 Silicon NPN Triple Diffused Application Character display horizontal deflection output Feature • High breakdown voltage VCES = 1500 V • Built-in damper diode type Outline TO-3P 2 1. Base 2. Collector Flange 3. Emitter 1 2 1 ID 3 3 2SC4742 Absolute Maximum Ratings (Ta = 25°C)

2SC4742

Abstract: Hitachi DSA00164
Contextual Info: 2SC4742 Silicon NPN Triple Diffused Application Character display horizontal deflection output Feature • High breakdown voltage VCES = 1500 V • Built-in damper diode type Outline TO-3P 2 1. Base 2. Collector Flange 3. Emitter 1 2 1 ID 3 3 2SC4742 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SC4742 Silicon NPN Triple Diffused HITACHI Application Character display horizontal deflection output Feature • High breakdown voltage VCES= 1500 V • Built-in damper diode type Outline 2SC4742 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings

2SC4742

Contextual Info: HITACHI 2SC4742-Silicon NPN Triple Diffused Character Display Horizontal Deflection Output Feature TO-3P • High breakdown voltage V CES = 1500 V • B u ilt-in damper diode type Absolute Maximum Ratings Ta = 25°C Item S ym b o l R ating Unit

2SC3365 -TO3

Abstract: 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979
Contextual Info: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

k 3878

Abstract: t 3866 2SC3759 2SD1847 2sc4291 2sc3866 2SC4423 2sc3052 3882 2SC3729
Contextual Info: - ü 4t £ Type No. ^ 2SC 3860 2SC 3861 2SC 3862 2SC 3863 ✓ 2SC 3864 2SC 3865 £ Manuf. ^ S Z * SANYO = $ te T X 2 TOSHIBA B m NEC B ÎL HITACHI RN1211 2SC2548 S ± S FUJITSU A MATSUSHITA MITSUBISHI — ROHM ÜN42Í5 RT1NÍ40S DTC114ÎS te t h m. □ 175

2SC3998

Abstract: 2sc4640 4793 2SC1815 2sd637 2sc2555 2SC4804 C4463 4802 2SD1546
Contextual Info: - m « Type No. a € Manuf. H * SANYO X £ TOSHIBA B Is NEC B 3¿ HITACHI S ± Ä FUJITSU fâ T MATSUSHITA 2SC 4773 □— A 2SC4406 2SC4244 2SC4463 2SC3932 2SC 4774 * □— A 2SC4407 2SC4250 2SC44S3 2SC4670 2SC 4775 □— A 2SC 4776 □— A 2SC4640 2SC1815

2SC4714

Abstract: 2SC4691 2SC4703 2SC470-3 2SC4723 HV COB 2SC4692 2SC4693 2SA1827 2SC4695
Contextual Info: - 212 - 13=25*0, *En(àTc=25tî m 2SC4691 2SC4692 2SC4693 2SC4694 2SC4695 2SC4696 2SC4699K 2SC4700 2SC4702 2SC4703 2SC4704 2SC4705 2SC4708 2SC4709 2SC4710 2SC4713K 2SC4714 2SC4723 2SC4727 2SC4728 2SC4729 2SC4730 2SC4731 2SC4735 2SC4736 2SC4737 2SC4740 2SC4741

2sc2899 transistor

Abstract: 2SC4739 2SD1527 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899
Contextual Info: 24 HIT ACH I/ O P T O E L E C T R O N I C S blE ]> • 44^205 0013776 TO? ■ HIT4 HITACHI 4. Power Bipolar Transistors 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

3892A

Abstract: 2SC3435 2SC3885 2SC3584 EN1402 mitsubishi 2sc 2SC3884 2sc3886 2SD1849 DTC143TS
Contextual Info: - 17 6 - m « T y p e No. ft € Manuf. 2SC 3892A 2SC 3893 > H M ~£. 2SC4123 iK 2 2SC4124 T O SHIBA H if 2SC3884 2SC 3895 ^ ✓ =. % =. % = n — F:•»*r 2SC3885 2SC 3896 2SC 3899 / = 2SC 3900 X = 2SC 3901 / 3 2SC 3902 / H ft ft ft ft 2SC 3905 2SC 3906 ^

FN1016

Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773

2SC4927

Abstract: 2SK1269 2sc2610 transistor 2sd2300 transistor 2sk 2SC2611 2SC4896 TO-22OAB 2SB566 2SB566A
Contextual Info: 24 HITACHI 4. Power Bipolar Transistors 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment. 4.2 Planar Process Technology

sc 4145

Abstract: NEC 4164 2SC4116 2SC4667 2SC4145 2SC4211 c3503 2sc4153 2SC3170 rohm 4157
Contextual Info: - m « M an u f. u— A m ED 2SC 4148 / 2SC 4149 2SC 4150 S 2SC345Ö n— A 2SC35Ö3 ifim T C 2SC3254 2SC3255 2SD1212 S t^ t c 2SC 4 1 5 1 X 2SC 4 1 5 3 / 2SC 4154 v-y'ry h m z m 4155 2SC 4157 —' 2SC 4 1 5 9 J M S = 2SC 4160 2SC 4 1 6 1 2SC 4162 = Z ft ft