2SC489 Search Results

2SC4891

Abstract: EN4138 c 4138
Contextual Info: Ordering number:EN4138 NPN Triple Diffused Planar Silicon Transistor 2SC4891 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).

2SC4898

Contextual Info: Power Transistors 2SC4898 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Symbol Rating Collector to base voltage VCBO 1 000 V Collector to emitter voltage

2SC4872

Abstract: 2SC4837 2SC4853 2SC4854 2SC4855 2SC4856 2SC4857 2SC4858 2SC4859 2SC4860
Contextual Info: - 216 - W. Ä T a = 2 5 ^ , * £ P iâ T c = 2 5 T î WH 2SC 4837 2SC4853 2SC4854 2SC4855 2SC4856 2SC4857 2SC4858 2SC4859 2SC4860 2SC4861 2SC4862 2SC4863 2SC4864 2SC4865 2SC4866 2SC4867 2SC4868 2SC4869 2SC4870 2SC4872 2SC4873 2SC4884 2SC4885 2SC4890 2SC4891

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4892 Silicon NPN triple diffusion planar type For power switching • Features 1.0±0.2 5.0±0.1 M Di ain sc te on na tin nc ue e/ d 2.5±0.1 13.0±0.2 • High-speed switching

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4892 Silicon NPN triple diffusion planar type For power switching • Features 1.0±0.2 2.5±0.1 13.0±0.2 • High-speed switching • High collector-base voltage (Emitter open) VCBO

Contextual Info: 2SC4899 Silicon NPN Epitaxial REJ03G0732-0300 Previous ADE-208-1126A Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 14.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz

2SC4899

Abstract: PTSP0003ZA-A
Contextual Info: 2SC4899 Silicon NPN Epitaxial REJ03G0732-0300 Previous ADE-208-1126A Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 14.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz

2SC4892

Contextual Info: Power Transistors 2SC4892 Silicon NPN triple diffusion planar type For power switching • Features 1.0±0.2 2.5±0.1 13.0±0.2 • High-speed switching • High collector-base voltage Emitter open VCBO • Satisfactory linearity of forward current transfer ratio hFE

Contextual Info: HITACHI 2SC4896-Silicon NPN Triple Diffused Application TO-3PL TV / character display horizontal deflection output Features • High speed switching t f < 0.5 |j s • High breakdown voltage VCBO = 1700 V 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Ta = 25°C

2SC4892

Contextual Info: Power Transistors 2SC4892 Silicon NPN triple diffusion planar type For power switching Unit: mm 5.0±0.1 • Features ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 900 V VCES 900 V VCEO 800 V Emitter to base voltage

Contextual Info: 2SC4896 Silicon NPN Triple Diffused HITACHI Application TV/character display horizontal deflection output Features • High speed switching tf < 0.5 |js • High breakdown voltage VCB0 = 1700 V Outline 1. B a s e 2. C o lle c to r 3. E m itte r 2SC4896 Absolute Maximum Ratings Ta = 25 °C

2SC4890

Contextual Info: Ordering number:EN4137 NPN Triple Diffused Planar Silicon Transistor 2SC4890 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).

Contextual Info: 2SC4897 Silicon NPN Triple Diffused HITACHI Application Character display horizontal deflection output Features • High speed switching time: 0.5 |_is max • High breakdown voltage, high current: VCB0 = 1500 V, Ic = 20 A • Suitable for large size CRT display

2SC4891

Abstract: EN4138
Contextual Info: Ordering number:EN4138 NPN Triple Diffused Planar Silicon Transistor 2SC4891 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).

zo 103 ma

Abstract: 2SC4899 DSA003637
Contextual Info: 2SC4899 Silicon NPN Epitaxial ADE-208-1126A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 14.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline

Contextual Info: I Ordering number: EN4138 f 2SC4891 N PN T riple Diffused P la n a r Silicon T ra n sisto r Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications F e a tu r e s • H igh Speed tf= 100ns typ . • H igh reliability (Adoption of HVP process).

Contextual Info: 2SC4896 Silicon NPN Triple Diffused HITACHI Application TV/character display horizontal deflection output Features • High speed switching tf < 0.5 jiS • High breakdown voltage VCbo = 1700 V Outline 1 Base 2 Collector 3 Emitter 2SC4896 Absolute Maximum Ratings Ta = 25°C

transistor c 4137

Abstract: 16AF a006 2SC4890 le1110A BU510
Contextual Info: Ordering number: E N 4 1 3 7 N°-4i37. II 2SC4890 N P N T riple Diffused P la n a r Silicon T ra n s isto r Very High-Defmition CRT Display Horizontal Deflection Output Applications F e a tu re s • H ig h Speed tf= 100ns typ . •H igh re lia b ility (A doption of H V P process).

B0937

Abstract: KT817G 2SC1984 B0241B 2SC1025 BUW64A to-53 2S093
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 35 40 45 50 SSP62B B0241B TIP31B 2N424A 2N424 BOT29B BOT29B BOT29BF B0179 2Nl647 2S094 2N2308 R4923 2SC489 2N3419 2N2983 BOT31BF BOT31BF MJE31B 2N4233 2N4233A 042Cl0 2N4075 2S0129 2S0297 2S0317A

2SC4892

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4892 Silicon NPN triple diffusion planar type For power switching 10.0±0.2 • Features 18.0±0.5 Solder Dip ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open)

Contextual Info: HITACHI 2SC4899-Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 14.0 dB typ, NF = 1.2 dB typ at f = 900 MHz t Table 1 Absolute Maximum Ratings Ta = 25°C

2SC4896

Contextual Info: 2SC4896 Silicon NPN Triple Diffused Application TO–3PL TV / character display horizontal deflection output Features • High speed switching tf ≤ 0.5 µs • High breakdown voltage VCBO = 1700 V 1 2 1. Base 2. Collector 3. Emitter 3 Absolute Maximum Ratings Ta = 25°C

Contextual Info: Ordering num ber: E N 4137 2SC4890 No.4137 N PN Triple Diffused P la n a r Silicon T ran sisto r , Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications , F e a tu r e s • H igh Speed tf= 100ns typ . - H igh reliability (Adoption of H V P process).

Hitachi DSA00164

Contextual Info: 2SC4897 Silicon NPN Triple Diffused Application Character display horizontal deflection output Features • High speed switching time: 0.5 µs max • High breakdown voltage, high current: VCBO = 1500 V, IC = 20 A • Suitable for large size CRT display Outline