2SC508 Search Results

Contextual Info: 2SC5086 SILICQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r V H F -U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • U n it in mm Low N oise F ig u re , H igh G ain . 1.« ±0.2 N F = l . l d B , |S 2 le P = l l d B f = l G H z 0 8 ±0.1

CBC 328

Abstract: 2SC5086FT bf 478
Contextual Info: 2SC5086FT SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC5086F 1 2 3 CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LC 6 1 CC 1 3 CBC 1 2 Q1 6 5 4 + AREA= 1 .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM

2SC5084

Contextual Info: TOSHIBA 2SC5084 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5084 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , Unit in mm + 0.5 2 .5 - 0.3 |S2 lel 2—lld B f= 1GHz MAXIMUM RATINGS (Ta = 25°C)

2SC5086

Contextual Info: TOSHIBA 2SC5086 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5086 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2lel2—lld B f= 1GHz Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SC5086F

Contextual Info: TOSHIBA TENTATIVE 2SC5086F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5086F Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F—l.ldB , |S2 1 e|2—He f—1GHz 1.6 ± 0.1 0.85 ± 0.1 ^8 MAXIMUM RATINGS (Ta = 25°C)

SL6 TRANSISTOR

Abstract: hitachi power transistor
Contextual Info: 2SC5081 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline C M P A K -4 £ ! S a!l!tlQr £

Contextual Info: T O SH IB A 2SC5086FT 7<;r ^nsfiFT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F =l.ldB , |S21el2 = lldB f=lG H z 1.2 ± 0 .0 5 MAXIMUM RATINGS (Ta = 25°C)

Hitachi DSA002756

Contextual Info: 2SC5080 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline 2SC5080 Absolute Maximum Ratings Ta = 25°C

2SC5084

Contextual Info: TOSHIBA 2SC5084 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5084 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2 lel 2—lld B Unit in mm + 0.5 f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

SL6 TRANSISTOR

Abstract: Hitachi Transistor Hitachi DSA002746
Contextual Info: 2SC5081 Silicon NPN Epitaxial Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline CMPAK–4 4 3 1 2 1. Collector

Hitachi DSA002756

Contextual Info: 2SC5081 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline 2SC5081 Absolute Maximum Ratings Ta = 25°C

2SC5087

Contextual Info: TOSHIBA 2SC5087 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5087 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2lel2= 13dB Unit in mm + 0.2 2 .9 -0 .3 -fr f=lGHz MAXIMUM RATINGS (Ta = 25°C)

2sc5084

Contextual Info: TO SH IBA 2SC5084 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5084 Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F = l.ld B , |S2lel2—lldB f=lGHz + 0.5 2 . 5 - 0.3 + MAXIMUM RATINGS (Ta = 25°C)

2SC5086FT

Contextual Info: 2SC5086FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

742 IC

Abstract: 2SC5087 ic 742
Contextual Info: 2SC5087 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5087 ○ VHF~UHF 低雑音増幅用 • 単位: mm 雑音特性が優れています。 : NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz 絶対最大定格 (Ta = 25°C) 項 目

2SC5086FT

Abstract: MA80240
Contextual Info: 2SC5086FT 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5086FT ○ VHF~UHF 低雑音増幅用 • 単位: mm 雑音特性が優れています。 : NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz 絶対最大定格 (Ta = 25°C) 項

Contextual Info: 2SC5085 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol

2SC5085

Abstract: transistor C 2240
Contextual Info: 2SC5085 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol

2SK2752

Abstract: 2sk1326 3SK234 2SK431 3SK238 3SK229 3SK197 2SK1479 1535M 2SK190
Contextual Info: SMALL SIGNAL TRANSISTOR •High frequency amplifier Package code Type No. CMPAK 2SC4903 2SC4906 2SC4965 2SC4967 2SC5051 CMPAK-4 2SC4994 2SC4995 2SC5079 2SC5081 MPAK 2SC2619 2SC2620 2SC2732 2SCZ733 2SC2734 2SC2735 2SC2736 2SC2776 2SC3127 2SC3513 2SC3793 2SC3867

Contextual Info: 2SC5081 Silicon NPN Epitaxial HITACHI Application V H F / U H F w ide band am plifier Features • H igh gain bandw idth product fx = 13.5 G H z T yp • H igh gain, low noise figure PG = 18 dB Typ, N F = 1.1 dB T yp at f = 900 M Hz Outline CMPAK-4 4 T 1. Collector

transistor z 0607

Abstract: z 0607 ma Z 728
Contextual Info: H ITACH I 2SC5080-Silicon NPN Epitaxial Transistor Application V H F & U H F w ide band am plifire MPAK-4 Features • H igh gain bandw idth product fx = 13.5 G H z typ • H igh gain, low noise figure PG = 18 dB typ, N F = 1.1 dB typ at f = 900 M H z

Contextual Info: 2SC5088 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5088 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol

2SC5088

Abstract: transistor A726
Contextual Info: 2SC5088 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5088 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol

ZO 607 MA

Abstract: transistor zo 607 2SC5080 2SC5080ZD-TL-E AB5S
Contextual Info: 2SC5080 Silicon NPN Epitaxial REJ03G0742-0300 Previous ADE-208-1132A Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz