2SC510 Search Results

2SA1909

Abstract: 2SC5101
Contextual Info: Inchange Semiconductor Product Specification 2SA1909 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SC5101 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline TO-3PML and symbol

C5103

Abstract: transistor C5103 C5103 Transistor
Contextual Info: 2SC5103 Datasheet NPN 5A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 5A CPT3 Collector Base Emitter 2SC5103 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1952 3) Low VCE(sat) VCE(sat)=0.3V(Max.) (IC/IB=3A/0.15A)

2SC5100

Abstract: 2SA1908
Contextual Info: JMnic Product Specification 2SC5100 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SA1908 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol

2SA1909

Abstract: 2SC5101 027S
Contextual Info: JMnic Product Specification 2SA1909 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SC5101 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline TO-3PML and symbol

Contextual Info: High-speed Switching Transistor -60V, -5A 2SA1952 Features 1) High speed switching. (tf : Typ. 0.15 s at IC = -3A) 2) Low VCE(sat). (Typ. -0.2V at IC/IB= -3/-0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103. Dimensions (Unit : mm)

2SA1908

Abstract: 2SC5100
Contextual Info: Inchange Semiconductor Product Specification 2SC5100 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SA1908 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol

CBC 548 B

Abstract: CBC 548 CBC 548 A 2SC5108FT
Contextual Info: 2SC5108FT SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC5108FT CB 2 LWB 2 LWE 4 Cpe 4 Cpb 5 LC 6 CC 1 CBC 1 Q1 6 5 4 + AREA= 1 .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM + RE + RC + XTB + EG

LT 5232

Abstract: 2SC5106
Contextual Info: TOSHIBA 2SC5106 2 S C 5 1 06 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

2SA1909

Abstract: 2SC5101
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1909 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5101 APPLICATIONS ·Designed for audio and general purpose applications

Contextual Info: T O SH IB A 2SC5106 i ç c R 1 n fi TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm FOR VCO APPLICATION + 0.5 2 .5 -0 .3 M A X I M U M RATINGS Ta = ?S°Cl CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

2SC5109

Contextual Info: 2SC5109 TOSHIBA 2 S C 5 1 09 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

Pc 614

Abstract: 2SC5107
Contextual Info: TOSHIBA 2SC5107 2 S C 5 1 07 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2.1 ±0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

Contextual Info: 2SC5108F TOSHIBA TENTATIVE TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2SC5108F Unit in mm 1.6 ± 0.1 0.85 ±0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Contextual Info: Reliability Tests Report Product Name: 2SC5108 Package Name: SSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

2SC5108FT

Contextual Info: TOSHIBA 2SC5108FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5108FT Unit in mm FOR VCO APPLICATION 1.2 ± 0.05 0.8 ± 0.05 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current

2SC5104

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5104 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 1 2 4.4±0.5 0 to 0.4 0.8±0.1 R = 0.5

2SC5108FT

Contextual Info: 2SC5108FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108FT For VCO Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage

2SC5101

Abstract: 2SA1909 DSA0016511
Contextual Info: 2SC5101 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1909 Application : Audio and General Purpose Ratings Unit ICBO VCB=200V 10max µA VCEO 140 V IEBO VEB=6V 10max µA V 140min IC=50mA VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A

Contextual Info: 2SC5107 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage

Contextual Info: 2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage

2SC5108

Contextual Info: 2SC5108 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage

2SC5103

Abstract: 2SA1757 2SA1906 2SA1952 2SC4596
Contextual Info: Transistors 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 96-603-A314 (96-199-C314) 281

2SA1952

Abstract: 2SC5103
Contextual Info: 2SA1952 Transistors High-speed Switching Transistor −60V, −5A 2SA1952 zFeatures 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC/IB = −3/−0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103.