2SC5199 Search Results
2SC5199 Price and Stock
Toshiba America Electronic Components 2SC5199-O(Q)Trans GP BJT NPN 160V 12A 120000mW 3-Pin(3+Tab) TO-3PL |
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2SC5199-O(Q) | 200 | 39 |
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2SC5199-O(Q) | 160 |
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Toshiba America Electronic Components 2SC5199-R(Q)Trans GP BJT NPN 160V 12A 3-Pin(3+Tab) TO-3PL |
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2SC5199-R(Q) | 1 | 1 |
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2SC5199 Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|---|
| 2SC5199 |
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High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-3P(L); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: output(80W); Part Number: 2SA1942 | Original | 122.33KB | 4 | |||
| 2SC5199 | Unknown | Japanese Transistor Cross References (2S) | Scan | 39.08KB | 1 | |||
| 2SC5199 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 45.31KB | 1 | |||
| 2SC5199 |
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Silicon NPN transistor for power amplifier applications. Recommended for 80W high fidelity audio frequency amplifier output stage. | Scan | 135.8KB | 2 | |||
| 2SC5199 |
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TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE | Scan | 173.01KB | 3 | |||
| 2SC5199 |
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NPN Transistor | Scan | 173.01KB | 3 | |||
| 2SC5199-O |
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2SC5199 - TRANSISTOR 12 A, 160 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power | Original | 120.48KB | 4 | |||
| 2SC5199-R |
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2SC5199 - TRANSISTOR 12 A, 160 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power | Original | 120.48KB | 4 |
2SC5199 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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2-21F1A
Abstract: 2SA1942 2SC5199
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2SA1942 2SC5199 2-21F1A 20070701-JA 2-21F1A 2SA1942 2SC5199 | |
2SC5199
Abstract: 2-21F1A 2SA1942
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2SC5199 2SA1942 2-21F1A 2SC5199 | |
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Contextual Info: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage |
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2SA1942 2SC5199 | |
2-21F1A
Abstract: 2SA1942 2SC5199
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2SA1942 2SC5199 2-21F1A 2SA1942 2SC5199 | |
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Contextual Info: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage |
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2SA1942 2SC5199 | |
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Contextual Info: 2SC5199 TOSHIBA 2 S C 5 1 99 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 20.5M A X . • • J Ì3 .3 + 0 .2 - Complementary to 2SA1942 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. |
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2SC5199 2SA1942 | |
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Contextual Info: 2SA1942 TOSHIBA 2 S A 1 942 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5M A X . • • Complementary to 2SC5199 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C |
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2SA1942 2SC5199 | |
2SA1942
Abstract: 2SC5199
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2SA1942 2SC5199 2SA1942 2SC5199 | |
2sa1942
Abstract: 2SC5199
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2SA1942 2SC5199 -160V; 2sa1942 2SC5199 | |
toshiba marking code transistor
Abstract: Audio Power Amplifier TOSHIBA TOSHIBA NOTE TOSHIBA Transistor 2SC5199 2-21F1A 2SA1942 2SC5199
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2SA1942 2SC5199 toshiba marking code transistor Audio Power Amplifier TOSHIBA TOSHIBA NOTE TOSHIBA Transistor 2SC5199 2-21F1A 2SA1942 2SC5199 | |
New Jersey SemiconductorContextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1942 Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown VoltagePIN LEASE :V(BR)CEo=-160V(Min) 2.COLLECTOR • Complement to Type 2SC5199 |
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2SA1942 -160V 2SC5199 -50mA; New Jersey Semiconductor | |
2SC5199
Abstract: 2-21F1A 2SA1942 TOSHIBA Transistor 2SC5199
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2SC5199 2SA1942 2SC5199 2-21F1A 2SA1942 TOSHIBA Transistor 2SC5199 | |
A1942
Abstract: 80W TRANSISTOR AUDIO AMPLIFIER 2-21F1A 2SA1942 2SC5199
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2SA1942 2SC5199 A1942 80W TRANSISTOR AUDIO AMPLIFIER 2-21F1A 2SA1942 | |
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Contextual Info: TO SH IB A 2SC5199 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 99 POWER AMPLIFIER APPLICATIONS. U nit in mm .3 + 0.2 20.5MAX • Complementary to 2SA1942 • Recommend for 80W High Fidelity Audio Frequency Amplifier O utput Stage. MAXIMUM RATINGS Ta = 25°C |
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2SC5199 2SA1942 | |
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Contextual Info: 2SC5199 SILICON NPN TRIPLE DIFFUSED TYPE POW ER AMPLIFIER APPLICATIONS. • • U n it in m m Complementary to 2SA1942 Recommend for SOW High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage |
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2SC5199 2SA1942 | |
2SC5199
Abstract: 2SA1942
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2SC5199 2SA1942 2SC5199 2SA1942 | |
A1942
Abstract: 2-21F1A 2SA1942 2SC5199
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2SA1942 2SC5199 A1942 2-21F1A 2SA1942 | |
2SC5199
Abstract: 2-21F1A 2SA1942
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2SC5199 2SA1942 2SC5199 2-21F1A 2SA1942 | |
2SA1942
Abstract: 2SC5199
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2SA1942 2SC5199 -160V; 2SA1942 2SC5199 | |
A1942
Abstract: 2-21F1A 2SA1942 2SC5199
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2SA1942 2SC5199 000707EAA2' A1942 2-21F1A 2SA1942 | |
2-21F1A
Abstract: 2SA1942 2SC5199
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2SC5199 2SA1942 2-21F1A 2SA1942 2SC5199 | |
2SC5199
Abstract: 2-21F1A 2SA1942
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2SC5199 2SA1942 2SC5199 2-21F1A 2SA1942 | |
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Contextual Info: 2SC5199 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V min • Complementary to 2SA1942 • Suitable for use in 80-W high fidelity audio amplifier’s output stage. |
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2SC5199 2SA1942 2-21F1A | |
2-21F1A
Abstract: 2SA1942 2SC5199
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2SA1942 2SC5199 2-21F1A 2SA1942 2SC5199 | |