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    2SC5824 Search Results

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    2SC5824 Price and Stock

    ROHM Semiconductor 2SC5824T100R

    TRANS NPN 60V 3A MPT3
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    DigiKey 2SC5824T100R Cut Tape 888 1
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    ROHM Semiconductor 2SC5824T100Q

    TRANS NPN 60V 3A MPT3
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    DigiKey 2SC5824T100Q Cut Tape 812 1
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    Ameya Holding Limited 2SC5824T100Q 70 1
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    2SC5824 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5824 ROHM Power transistor (60V, 3A) Original PDF
    2SC5824 ROHM Power transistor (60V, 3A) Original PDF
    2SC5824T100Q ROHM High speed switching Transistor; Package: MPT3; Constitution materials list: Packing style: taping; Package quantity: 1000; Original PDF
    2SC5824T100Q ROHM Power Transistor (60 V, 3 A) Original PDF
    2SC5824T100Q ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN 60V 3A SOT-89 Original PDF
    2SC5824T100R ROHM TRANSISTOR NPN 60V 3A SOT-89 TR Original PDF
    2SC5824T100R ROHM Power Transistor (60 V, 3 A) Original PDF
    2SC5824T100R ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 60V 3A SOT-89 MPT3 Original PDF

    2SC5824 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)


    Original     		PDF 2SC5824 SC-62) OT-89> 2SA2071 A/200mA) R1102A

    Untitled

    Abstract: No abstract text available
    Text: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)


    Original     		PDF 2SC5824 SC-62) OT-89> 2SA2071 A/200mA) R1102A

    Untitled

    Abstract: No abstract text available
    Text: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825


    Original     		PDF 2SA2701 2SA2702 2SA2071 SC-62) OT-89> 2SC5824 2SC5825 -500mV 2SA2072 SC-63)

    2SA2071

    Abstract: 2SC5824 T100
    Text: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 !External dimensions (Units : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) !Applications NPN Silicon epitaxial planar transistor 0.4 1.5


    Original     		PDF 2SC5824 200mV 200mA) 2SA2071. 2SA2071 2SC5824 T100

    2SA2071

    Abstract: 2SC5824 T100
    Text: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 !External dimensions (Units : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) !Applications NPN Silicon epitaxial planar transistor 0.4 1.5


    Original     		PDF 2SC5824 200mV 200mA) 2SA2071. 2SA2071 2SC5824 T100

    2SA2071

    Abstract: 2SC5824 T100
    Text: Power transistor 60V, 3A 2SC5824 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SC5824 200mV 200mA) 2SA2071. R1120A 2SA2071 2SC5824 T100

    11308

    Abstract: 2SC5824 Q2SC5824
    Text: SPICE PARAMETER 2SC5824 by ROHM TR Div. * 2SC5824 NPN BJT model * Date: 2006/12/04 .MODEL 2SC5824 NPN + IS=3.3000E-12 + BF=248.92 + VAF=100 + IKF=5.2602 + ISE=3.3000E-12 + NE=1.7608 + BR=7.4847 + VAR=100 + IKR=1.1308 + ISC=8.9866E-12 + NC=3.3932 + NK=.87107


    Original     		PDF 2SC5824 Q2SC5824 3000E-12 9866E-12 000E-3 2090E-3 35E-12 685E-12 11308 2SC5824

    Untitled

    Abstract: No abstract text available
    Text: 2SA2071 / 2SA2072 Datasheet PNP -3.0A -60V Middle Power Transistor Outline Parameter Value VCEO IC 60V 3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> Features 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825


    Original     		PDF 2SA2071 2SA2072 2SA2071 SC-62) OT-89> 2SC5824 2SC5825 500mV SC-63)

    2SC5824

    Abstract: 2SA2071 T100 2SC582 2SA20
    Text: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 zExternal dimensions (Unit : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) zApplications NPN Silicon epitaxial planar transistor 0.4 1.5 0.4


    Original     		PDF 2SC5824 200mV 200mA) 2SA2071. 2SC5824 2SA2071 T100 2SC582 2SA20

    2SC5824

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SC5824 Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071.


    Original     		PDF 2SC5824 200mV 200mA) 2SA2071. R1120A 2SC5824

    Untitled

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SC5824 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SC5824 200mV 200mA) 2SA2071. R1120A

    2SA2071

    Abstract: 2SC5824 T100 60V transistor npn 2a switching applications
    Text: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SC5824 200mV 200mA) 2SA2071. 2SA2071 2SC5824 T100 60V transistor npn 2a switching applications

    2SA2071

    Abstract: 2SC5824 T100
    Text: Power transistor 60V, 3A 2SA2071 Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SA2071 200mV 2SC5824 R1120A 2SA2071 2SC5824 T100

    2SA2071

    Abstract: 2SC5824 T100
    Text: 2SA2071 Transistor Power transistor −60V, −3A 2SA2071 !External dimensions (Units : mm) MPT3 4.0 2.5 0.5 (1) 0.5 3.0 1.5 0.4 1.0 (2) 1.6 4.5 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −3A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −2A, IB = −0.2A)


    Original     		PDF 2SA2071 -200mV 2SC5824 2SA2071 2SC5824 T100

    mn2510

    Abstract: 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"
    Text: Low voltage power bipolar transistors Selection guide October 2007 www.st.com/bipolar SOT-223 Part number NPN PNP STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 2STN1360 2STN2360 STN1802 STN851 STN951* STN715 STN817A IC [A] VCE [V] VCE sat @


    Original     		PDF OT-223 STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 mn2510 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"

    catalog transistor

    Abstract: 2SC5824
    Text: MP6X3 Transistors Medium Power Transistor 60V, 3A MP6X3 zDimensions (Unit : mm) zApplication Low frequency amplifier High speed switching MPT6 zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC=3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC=2A, IB=200mA)


    Original     		PDF 200mV 200mA) 2SC5824-dies catalog transistor 2SC5824

    2SA20

    Abstract: MP6Z3
    Text: MP6Z3 Transistors Medium Power Transistor 60V, 3A MP6Z3 zFeatures 1) High speed switching. (tf : Typ. : 30ns at Ic= 3A) 2) Low saturation voltage, typically (Typ. : 200mV at Ic = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 200mV 200mA) 2SC5824-die 2SA2071-die 2SA20 MP6Z3

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


    Original     		PDF O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027

    Untitled

    Abstract: No abstract text available
    Text: MP6Z3 Transistors Medium Power Transistor 60V, 3A MP6Z3 zFeatures 1) High speed switching. (tf : Typ. : 30ns at Ic= 3A) 2) Low saturation voltage, typically (Typ. : 200mV at Ic = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 200mV 200mA) 2SC5824-die 2SA2071-die

    pioneer mosfet audio amp ic

    Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
    Text: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great


    Original     		PDF 2008-Feb. SC-75A OT-416 50P5876E pioneer mosfet audio amp ic 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114

    2SC6144

    Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
    Text: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.


    Original     		PDF R0039A 52P6215E 2SC6144 IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114

    Untitled

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SA2071 Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SA2071 200mV 2SC5824 R1120A

    Untitled

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SA2071 Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SA2071 200mV 2SC5824 R1120A