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    2SD0814 Search Results

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    2SD0814 Price and Stock

    Panasonic Electronic Components 2SD0814ARL

    TRANS NPN 185V 0.05A MINI3
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    DigiKey 2SD0814ARL Reel 3,000
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    Quest Components 2SD0814ARL 7,183
    • 1 $0.416
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    2SD0814ARL 16
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    Panasonic Electronic Components 2SD0814ASL

    TRANS NPN 185V 0.05A MINI3
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    Panduit Corp 2SD0814ARL

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    Bristol Electronics 2SD0814ARL 8,979
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    Panasonic Electronic Components 2SD0814AR

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    Bristol Electronics 2SD0814AR 2,990
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    2SD0814 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD0814 Panasonic NPN Transistor Original PDF
    2SD0814 Panasonic Silicon NPN epitaxial planer type small signal transistor Original PDF
    2SD0814A Panasonic NPN Transistor Original PDF
    2SD0814A Panasonic Transistor for high breakdown voltage low-frequency and low-noise amplification Original PDF
    2SD0814A Panasonic Silicon NPN epitaxial planer type small signal transistor Original PDF
    2SD0814A Panasonic Silicon NPN epitaxial planar type Original PDF
    2SD0814ALQ Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD0814ALR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD0814ALS Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD0814ARL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 185VCEO 50MA MINI-3P Original PDF
    2SD0814ASL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 185VCEO 50MA MINI-3P Original PDF

    2SD0814 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD0814A

    Abstract: 2SD814A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)


    Original     		PDF 2002/95/EC) 2SD0814A 2SD814A) 2SD0814A 2SD814A

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d 0.4±0.2 5° 2


    Original     		PDF 2SD0814, 2SD0814A 2SD814, 2SD814A) 2SD0814 2SD0814A

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features M Di ain sc te on na tin nc ue e/ d 0.40+0.10 ñ0.05 5° 0.4±0.2 2.8+0.2 -0.3 2 1 (0.95) (0.95)


    Original     		PDF 2SD0814, 2SD0814A 2SD814, 2SD814A)

    2SD0814

    Abstract: 2SD814 XN01507 XN1507
    Text: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD0814(2SD814) x 2 elements +0.1 +0.2 1.1 -0.1


    Original     		PDF XN01507 XN1507) 2SD0814 2SD814) 2SD814 XN01507 XN1507

    2SB0792

    Abstract: 2SB0792A 2SB792 2SB792A 2SD0814 2SD814
    Text: Transistor 2SB0792, 2SB0792A 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0814 (2SD814) Unit: mm +0.2 2.8 –0.3 2SB0792 base voltage 2SB0792A Collector to 2SB0792 –150 V –185


    Original     		PDF 2SB0792, 2SB0792A 2SB792, 2SB792A) 2SD0814 2SD814) 2SB0792 2SB0792 2SB0792A 2SB792 2SB792A 2SD0814 2SD814

    2SD0814A

    Abstract: 2SD814A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ 2 1 (0.95) (0.95)


    Original     		PDF 2002/95/EC) 2SD0814A 2SD814A) 2SD0814A 2SD814A

    2SD0814

    Abstract: 2SD0814A 2SD814 2SD814A
    Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features Collector to 2SD0814 base voltage 2SD0814A Collector to 2SD0814 1.45 0.95 0.95 +0.1


    Original     		PDF 2SD0814, 2SD0814A 2SD814, 2SD814A) 2SD0814 2SD0814 2SD0814A 2SD814 2SD814A

    2SB792A

    Abstract: 2SB0792 2SB0792A 2SB792 2SD0814 2SD814 203 transistor
    Text: Transistor 2SB0792, 2SB0792A 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0814 (2SD814) Unit: mm 0.40+0.10 ñ0.05 • Features Parameter Symbol Collector to 2SB0792 base voltage


    Original     		PDF 2SB0792, 2SB0792A 2SB792, 2SB792A) 2SD0814 2SD814) 2SB0792 2SB792A 2SB0792 2SB0792A 2SB792 2SD0814 2SD814 203 transistor

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Rating Unit VCBO


    Original     		PDF 2002/95/EC) 2SD0814A 2SD814A)

    2SD0814A

    Abstract: 2SD814A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05


    Original     		PDF 2002/95/EC) 2SD0814A 2SD814A) SC-59 2SD0814A 2SD814A

    2SD0814A

    Abstract: 2SD814A
    Text: Transistor 2SD0814A 2SD814A Silicon NPN epitaxial planar type Unit: mm For high breakdown voltage low-frequency and low-noise amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High collector to emitter voltage VCEO


    Original     		PDF 2SD0814A 2SD814A) 2SD0814A 2SD814A

    2SD0814A

    Abstract: 2SD814A
    Text: Transistors 2SD0814A 2SD814A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2SD0814A 2SD814A) 2SD0814A 2SD814A

    2SD0814

    Abstract: 2SD814 XN01507 XN1507
    Text: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 5 2 1 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element Parameter 0 to 0.1 2SD0814(2SD814) x 2 elements ■ Absolute Maximum Ratings


    Original     		PDF XN01507 XN1507) 2SD0814 2SD814) 2SD814 XN01507 XN1507

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)


    Original     		PDF 2002/95/EC) 2SD0814A 2SD814A)

    2SD0814

    Abstract: 2SD814 XP01507 XP1507
    Text: Composite Transistors XP01507 XP1507 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 High breakdown voltage and for low noise amplification 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SD0814(2SD814) x 2 elements 0 to 0.1 ● 0.7±0.1


    Original     		PDF XP01507 XP1507) 2SD0814 2SD814) 2SD814 XP01507 XP1507

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SD0814

    Abstract: 2SD814 XN01507 XN1507
    Text: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 5 2 Parameter (Ta=25˚C)


    Original     		PDF XN01507 XN1507) 2SD0814 2SD814 XN01507 XN1507

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 1.50+0.25 –0.05 3 Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XN01507 XN1507) 2SD0814 2SD814)

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    ON3105

    Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
    Text: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S


    Original     		PDF MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 ON3105 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013

    2SD0814

    Abstract: 2SD814 XP01507 XP1507
    Text: Composite Transistors XP01507 XP1507 Silicon NPN epitaxial planer transistor ● 5 4 Features 0.2±0.1 Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 5° ● 0.20±0.05


    Original     		PDF XP01507 XP1507) 2SD0814 2SD814) 2SD814 XP01507 XP1507