2SD1415A Search Results

D1415A

Abstract: 2SD1415A d1415
Contextual Info: 2SD1415A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1415A ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 3 V, IC = 3 A)

D1415A

Abstract: transistor D1415A 2SD1415A d1415
Contextual Info: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

2SD1415A

Contextual Info: SavantIC Semiconductor Product Specification 2SD1415A Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications

2SD1415A

Abstract: 100L
Contextual Info: T O S H IB A 2SD1415A 2 S D 1 4 1 5A TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE D AR LIN G TO N Unit in mm HIGH POWER SW ITCHING APPLICATIONS H A M M E R DRIVE, PULSE M O TO R DRIVE APPLICATIONS • ±0.2 -*03.2 •- 10 ±0.3 . - -I

D1415A

Abstract: 2SD1415A
Contextual Info: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

2SD1415A

Contextual Info: TO SH IBA 2SD1415A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D 1 4 1 5A HIGH POWER SWITCHING APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0 .3 . 0 3 . 2 ± 0.2 2 .7 ± Q . 2 IP • High DC Current Gain

D1415A

Abstract: transistor D1415A d1415 2SD1415A
Contextual Info: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

2SD1415A

Contextual Info: TO SH IBA 2SD1415A 2 S D 1 4 1 5A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 High DC Current Gain : hFE = 2000 (Min.) (VCE = 3 V, IC = 3 A)

transistor D1415A

Contextual Info: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

Contextual Info: TOSHIBA 2SD1415A 2 S D 1 4 1 5A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH POWER SWITCHING APPLICATIONS H A M M E R DRIVE, PULSE M O TOR DRIVE APPLICATIONS • • High DC Current Gain : hFE = 2000 (Min.) (Vq e = 3 V, Iç = 3 A)

Contextual Info: TOSHIBA TENTATIVE 2SD1415A TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE D ARLING TO N 3 < ; n i d i R A HIGH POWER SW ITCHING APPLICATIONS H A M M E R DRIVE, PULSE M O TO R DRIVE APPLICATIONS • High DC Current Gain : h p E = 2000 (Min.) (VCE = 3V, Ic = 3 A )

2SD1415A

Abstract: 2SD1415 DARLINGTON 3A 100V npn
Contextual Info: Inchange Semiconductor Product Specification 2SD1415A Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications

transistor D1415A

Abstract: D1415A
Contextual Info: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

D1415A

Abstract: 2SD1415A d1415 TR20
Contextual Info: 2SD1415A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1415A ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 3 V, IC = 3 A)

B1020A

Abstract: 2SB1020A 2SD1415A
Contextual Info: 2SB1020A シリコンPNP三重拡散形 ダーリントン接続 東芝トランジスタ 2SB1020A 通 信 工 業 用 ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = −3 V, IC = −3 A)

2SB1020A

Abstract: 2SD1415A
Contextual Info: TO SH IBA 2SB1020A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SB1020A HIGH POWER SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0.3 • High DC Current Gain : hFE = 2000 (Min.) (at VnE = -3 V , IC = -3 A )

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

B1020A

Contextual Info: 2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington Power 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

B1020A transistor

Contextual Info: 2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington Power 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

Contextual Info: 2SB1020A TOSHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER 7 < ; R i n 7 H A INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : hFE = 2000 (Min.) (at VCE= -3V , I q = -3A )