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    2SD1857A Price and Stock

    ROHM Semiconductor 2SD1857ATV2P

    TRANS NPN 160V 1.5A ATV
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    DigiKey 2SD1857ATV2P Ammo Pack 2,500
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    ROHM Semiconductor 2SD1857ATV2Q

    TRANS NPN 160V 1.5A ATV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SD1857ATV2Q Ammo Pack 2,500
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    2SD1857A Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1857A ROHM Original PDF
    2SD1857A ROHM Power Transistor (160V , 1.5A) Original PDF
    2SD1857A ROHM ATR, ATV Transistors Scan PDF
    2SD1857A ROHM Power Transistor (160V 1.5A) Scan PDF
    2SD1857A ROHM ATR / ATV Transistors Scan PDF
    2SD1857ATV2P ROHM Power Transistor (160 V , 1.5 A) Original PDF
    2SD1857ATV2P ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS DVR NPN 160V 1.5A ATV TB Original PDF
    2SD1857ATV2Q ROHM Power Transistor (160 V , 1.5 A) Original PDF
    2SD1857ATV2Q ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS DVR NPN 160V 1.5A ATV TB Original PDF

    2SD1857A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1918

    Abstract: No abstract text available
    Text: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A zDimensions (Unit : mm) zFeatures 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1236A. 5.1


    Original     		PDF 2SD1918 2SD1857A 80MHZ) 2SB1236A. 2SD1857A 2SD1918 SC-63 R0039A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. Dimensions (Unit : mm) 5.1


    Original     		PDF 2SD1918 2SD1857A 80MHZ) 2SB1275. 2SD1918 R1010A

    Model 450

    Abstract: 2SD1857A
    Text: SPICE PARAMETER 2SD1857A by ROHM TR Div. * 2SD1857A NPN BJT model * Date: 2006/11/20 .MODEL 2SD1857A NPN + IS=450.00E-15 + BF=101.86 + VAF=9.5235 + IKF=2.0711 + ISE=450.00E-15 + NE=1.4191 + BR=22.448 + VAR=100 + IKR=.96913 + ISC=31.986E-12 + NC=1.3523 + NK=.68874


    Original     		PDF 2SD1857A Q2SD1857A 00E-15 986E-12 067E-3 88E-12 705E-12 8667E-9 Model 450 2SD1857A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 160V, 1.5A 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. Dimensions (Unit : mm)


    Original     		PDF 2SB1275 2SB1236A 50MHZ) 2SD1918 2SD1857A. 2SB1275 R0039A

    2SD2211

    Abstract: 2SB1236A 2SB1275 2SD1857A 2SD1918 80MHZ T100
    Text: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD2211 / 2SD1918 / 2SD1857A !External dimensions (Units : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.


    Original     		PDF 2SD2211 2SD1918 2SD1857A 2SD2211 80MHZ) 2SB1275 2SB1236A. 2SB1236A 2SD1857A 80MHZ T100

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 160V, 1.5A 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. Dimensions (Unit : mm)


    Original     		PDF 2SB1275 2SB1236A 50MHZ) 2SD1918 2SD1857A. 2SB1275 R0039A

    2SB1275

    Abstract: 2SB1236A 2SD1857A 2SD1918 50MHZ
    Text: 2SB1275 / 2SB1236A Transistors Power Transistor −160V , −1.5A 2SB1275 / 2SB1236A zFeatures 1) High breakdown voltage.(BVCEO = −160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.


    Original     		PDF 2SB1275 2SB1236A -160V -160V) 50MHZ) 2SD1918 2SD1857A. 2SB1275 2SB1236A 2SD1857A 50MHZ

    2SD2211

    Abstract: 2SD2211 hfe 2SB1236A 2SB1275 2SD1857A 2SD1918 80MHZ T100
    Text: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD2211 / 2SD1918 / 2SD1857A zExternal dimensions (Unit : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.


    Original     		PDF 2SD2211 2SD1918 2SD1857A 80MHZ) 2SB1275 2SB1236A. 2SD2211 2SD2211 hfe 2SB1236A 2SD1857A 80MHZ T100

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. Dimensions (Unit : mm) 5.1


    Original     		PDF 2SD1918 2SD1857A 80MHZ) 2SB1275. 2SD1918 R1010A

    2SD1763A

    Abstract: 2sd2400a 2SB1186A 2SB1275 2SB1236A 2SB1569A 2SD1857A 2SD1918 2SD2211 2SB1569
    Text: Transistors 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A 96-612-A58 (96-744-C58) 277


    Original     		PDF 2SB1275 2SB1236A 2SB1569A 2SB1186A 2SD2211 2SD1918 2SD1857A 2SD2400A 2SD1763A 96-612-A58) 2SD1763A 2SB1186A 2SB1569

    2SD2211

    Abstract: 80MHZ 2SB1275 2SD1857A 2SD1918 PW200
    Text: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Dimensions (Unit : mm) Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. 5.1


    Original     		PDF 2SD1918 2SD1857A 80MHZ) 2SB1275. 2SD1918 R1010A 2SD2211 80MHZ 2SB1275 2SD1857A PW200

    2SB1275

    Abstract: 2SD1918 2SB127 160V2 2SB1236A 2SD1857A 50MHZ
    Text: Power Transistor 160V, 1.5A 2SB1275 / 2SB1236A Dimensions (Unit : mm) Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.


    Original     		PDF 2SB1275 2SB1236A 50MHZ) 2SD1918 2SD1857A. 2SB1275 R0039A 2SB127 160V2 2SB1236A 2SD1857A 50MHZ

    2SB1236A

    Abstract: 2SB1275 2SD1857A 2SD1918 2SD2211 80MHZ T100
    Text: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD2211 / 2SD1918 / 2SD1857A !External dimensions (Units : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.


    Original     		PDF 2SD2211 2SD1918 2SD1857A 2SD2211 80MHZ) 2SB1275 2SB1236A. 2SB1236A 2SD1857A 80MHZ T100

    2SB1236A

    Abstract: 2SB1275 2SD1857A 2SD1918 50MHZ
    Text: 2SB1275 / 2SB1236A Transistors Power Transistor −160V , −1.5A 2SB1275 / 2SB1236A !External dimensions (Units : mm) !Features 1) High breakdown voltage.(BVCEO = −160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ)


    Original     		PDF 2SB1275 2SB1236A -160V -160V) 50MHZ) 2SD1918 2SD1857A. 2SB1275 2SB1236A 2SD1857A 50MHZ

    2SD1665

    Abstract: 2SD1857A
    Text: 2SD1665AM/2SD1857A h -p > v ^ £ /T ra n s is to rs 2SD1665AM 2SD1857A • X tf £ y 7 JU7° \s — NPN y>J = l> Epitaxial Planar NPN Silicon Transistors Power Amp. WA \f&[3l/Dimensions Unit : mm « 1) iHiiW15T&#39;<fc 5 o 2SD1665AM B V ceo=160V 2 ) f T* ' < ,


    OCR Scan     		PDF 2SD1665AM/2SD1857A 2SD1665AM 2SD1857A iHiiW15T 2SD1665AM 2SB1130AM, 2SB1236A 2SD1665 2SD1857A

    d1763a

    Abstract: d2400a 1763A 2SD1763A D1763 d1857a B 1186a 2SB1186A 2sb1569a 1569a
    Text: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor —160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •F e a t u r e s 1 ) High breakdown voltage. (BV ceo~ — 160V) 2 ) Low collector output capacitance. (Typ. 30pF at V cb= 1 0 V )


    OCR Scan     		PDF 2SB1275 2SB1236A 2SB1569A 2SB1186A 2SD2211 2SD1918 2SD1857A 2SD2400A 2SD1763A 2SD1918/2SD1857A/2SC d1763a d2400a 1763A 2SD1763A D1763 d1857a B 1186a 1569a

    2SD1857A

    Abstract: No abstract text available
    Text: 2SB1236A Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • 2SB1236A (ATVTV2) • high collector breakdown voltage BV qeo = —160 V high transition frequency • low output capacitance • complementary pair with 2SD1857A


    OCR Scan     		PDF 2SB1236A 2SD1857A 2SB1236A

    d2400a

    Abstract: transistor d2400a 2SD1916 2sd2400a 2SD1763A 2SB1275 2SD2211 SD1763A 2SB1186A 2SB1236A
    Text: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor — 160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te m axim um rating s ( T a = 2 5 t) • F e a tu re s


    OCR Scan     		PDF 2SB1275 2SB1236A 2SB1569A 2SB1186A 2SD2211 2SD1918 2SD1857A 2SD2400A 2SD1763A d2400a transistor d2400a 2SD1916 2SD1763A SD1763A

    2SB1275

    Abstract: 2SB1236A 2SD1918
    Text: 2SB1275 / 2SB1236A Transistors Power Transistor -1 6 0 V , - 1 .5A 2SB127512SB1236A •Features 1) High breakdown voltage.(BVcEO = -1 60V) 2) Low collector output capacitance. (Typ. 30pF at V cb = 10V) 3) High transition frequency.(fr = 50MHz) 4) Complements the 2SD1918/2SD1857A.


    OCR Scan     		PDF 2SB1275 2SB1236A -160V, 2SB127512SB1236A -160V) 30pFatVcB 50MHz) 2SD1918 /2SD1857A. 2SB1275 2SB1236A

    2SB1275

    Abstract: 2SD1857A 2SD1918 2SD2211 T100
    Text: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD1857A •Features 1) High breakdown voltage.(BVcEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at Vcb = 10V) 3) High transition frequency.(fr = 80MHz) 4) Complements the 2SB1275/2SB1236A.


    OCR Scan     		PDF 2SD2211 2SD1918 2SD1857A 2SD221112SD191812SD1857A 80MHz) 2SB1275 /2SB1236A. 100ms 2SD1857A T100

    2SD1857A

    Abstract: Transistor CD 120 Q
    Text: 2SD1857A Transistor, NPN Features Dimensions Units : mm • available in ATV TV2 package • high collector breakdown voltage, BVq^ q = 160 V • high transition frequency (fj) and low output capacitance (Cob) • complementary pair with 2SB1236A 2SD1857A (ATV-TV2)


    OCR Scan     		PDF 2SD1857A 2SB1236A Collect120 2SD1857A Transistor CD 120 Q

    2SB909M

    Abstract: 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2SA1548 2Sc4776 2SB1130
    Text: ATR • ATV Approximately the same size as the TO -92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package , VcEO V ATV ATR A pplication ^VcES ^ V c E R Part No. - 2SA937AMLN L ow Noise 2SA937AM Pre Am p


    OCR Scan     		PDF 2SA937AMLN 2SC2021MLN 2SA937AM 2SA1547A 2SC2021M 2SC4010 2SC4776M 2SC4778 2SA874M 2SA1548 2SB909M 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2Sc4776 2SB1130

    Untitled

    Abstract: No abstract text available
    Text: 2SB1130AM/2SB1236A h 7 > y 7 i i / I ransistors 2SB 1130AM 2SB1236A PNP y ' J - ¡ > Epitaxial Planar PNP Silicon Transistors 't'ii^ jiite ffl/M e d iu m Power Amp. • \Ü £ |3 |/D im e n s io n s Unit : mm 2SB 1236A 2SB 1130A M BV c e o = — 160V 6.8± 0.2


    OCR Scan     		PDF 2SB1130AM/2SB1236A 1130AM 2SB1236A 2SD1665AM 2SD1857A 2SD1857A. SC-71

    C2021M

    Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
    Text: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)


    OCR Scan     		PDF 2SC2021LJNE) 2SB821 2SA937ALN \2SC2021LN 2SB1276 2021M 2SA937AM 2SB737 2SD786 2SA1137 C2021M B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240