2SD207 Search Results

Contextual Info: TO SHIBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)

D2079

Abstract: 2SD2079 2SB1381
Contextual Info: 2SD2079 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2079 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE (1) = 2000 (min) • Low saturation voltage: VCE (sat) (1) = 1.5 V (max)

Contextual Info: Transistor 2SB1377 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SD2071 Unit: mm 1.05 2.5±0.1 ±0.05 1.0 1.0 0.65 max. • Absolute Maximum Ratings 0.5 4.5±0.1 Allowing supply with the radial taping.

2SD2079

Abstract: 2SB1381
Contextual Info: T O S H IB A 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 r ^3.2 ±0.2 2.7±Q 2 <v> High DC Current Gain cn CO O o : h p E (:L) = 2000 (Min.)

2SB1381

Abstract: 2SD2079
Contextual Info: SavantIC Semiconductor Product Specification 2SB1381 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2079 ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications

2SD2079

Abstract: 2SB1381
Contextual Info: JMnic Product Specification 2SB1381 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2079 ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications

OC139

Contextual Info: TOSHIBA 2SD2079 Field Effect Transistor Unit in mm 03.2 ±0.2 10 ± 0.3 Silicon NPN Triple Diffused Type 2.7±0.2 - - 1 / - -O 00 Hammer Drive and Pulse Motor Drive Applications o> ñ 15 ± 0 . 3 kcY High Power Switching Applications,

2SB1381

Abstract: 2SD2079
Contextual Info: SavantIC Semiconductor Product Specification 2SD2079 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1381 APPLICATIONS ·High power switching applications

2SD2074

Contextual Info: Transistor 2SD2074 Silicon NPN epitaxial planer type Unit: mm For low-frequency output amplification For muting For DC-DC converter 6.9±0.1 4.0 2.5±0.1 0.8 (0.5) (1.0) (0.2) 4.5±0.1 0.7 (1.0) 0.65 max. ● ● ● ● Low collector to emitter saturation voltage VCE(sat).

2SD2074

Contextual Info: Transistors 2SD2074 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 0.8 • Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron • High forward current transfer ratio hFE

2SD2074

Contextual Info: Transistor 2SD2074 Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 ● 14.5±0.5 +0.1 0.45–0.05 2.5±0.5 * Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20

Contextual Info: 2SD2079 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2079 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE (1) = 2000 (min) • Low saturation voltage: VCE (sat) (1) = 1.5 V (max)

2SD2074

Contextual Info: Transistor 2SD2074 Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 ● 14.5±0.5 +0.1 0.45–0.05 2.5±0.5 * Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20

2SD2071

Abstract: 2SB1377 transistor HFE 400 1w
Contextual Info: Transistor 2SD2071 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SB1377 Unit: mm 1.05 2.5±0.1 ±0.05 ● Low collector to emitter saturation voltage VCE sat . Output of 1W is obtained with a complementary pair with

Contextual Info: Transistors 2SD2074 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 2.5±0.1 0.8 • Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron • High forward current transfer ratio hFE

Contextual Info: TOSHIBA 2SD2075A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 3<;n?ii7RA HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S LAMP, SOLENOID DRIVE APPLICATIONS • a w H ig h DC C urrent G ain : h p E = 500~1500 Iç = lA T

A1046

Abstract: h10u BA 7515
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2079 HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. . High DC Current Gain Unit in 10±0.3 : hFE= 2000 Min. (Vc e =3V, Ic =3A) 03.2 ±0.2 s . Low Saturation Voltage: Vc£(sat)=1.5V(Max.)(Ic “3A)

3202 a ic

Abstract: njc5
Contextual Info: SILICON NPN EPITAXIAL TYPE 2SD2075 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. LAMP SOLENOID DRIVE APPLICATIONS. 10.3MAX jZ<3.2±0.2 . High DC Current Gain : hFE=500~1500 Ic=lA . Low Collector Saturation Voltage : VCE(sat)=0.3V(Max.) (Ic=5A)

DARLINGTON 3A 100V npn

Abstract: 2SB1381 2SD2079
Contextual Info: Inchange Semiconductor Product Specification 2SD2079 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SB1381 APPLICATIONS ・High power switching applications

Contextual Info: Transistors 2SD2074 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 2.5±0.1 0.8 (1.0) (0.2) 4.5±0.1 • Features M Di ain sc te on na tin nc ue e/ d • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Transistor 2SD2071 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SB1377 Unit: mm 1.05 2.5±0.1 ±0.05 ● 0.5 4.5±0.1 Low collector to emitter saturation voltage VCE sat . Output of 1W is obtained with a complementary pair with

2SB1381

Abstract: 2SD2079
Contextual Info: TO SH IBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 HIGH POWER SWITCHING APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0 .3 ^ 3 .2 ± 0.2 2.7±Q 2 r CO High DC Current Gain cn ro o : ^FE ( 1) = 2000 (Min.)

2SD2075A

Abstract: Scans-0058768 UU100
Contextual Info: TO SH IBA 2SD2075A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2075A HIGH CURRENT SWITCHING APPLICATIONS Unit in mm LAMP, SOLENOID DRIVE APPLICATIONS 10 ± 0 .3 r ^ 3 .2 ± 0.2 -y < tY ' High DC Current Gain : hFE = 5 0 0-1500 Ie = lA o 2.7±Q 2

2SD2071

Abstract: 2SB1377
Contextual Info: Transistor 2SB1377 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SD2071 Unit: mm 1.05 2.5±0.1 ±0.05 • Features Allowing supply with the radial taping. 1.0 1.0 14.5±0.5 0.65 max. ■ Absolute Maximum Ratings