2SD2195 Search Results

darlington Ib 0.1A

Abstract: darlington transistor for audio power application 2SD1980 100V 2A MPT3 2SB1316 2SB1580 2SD1867 2SD2195 T100 DPT-100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor 100V, 2A 2SD2195 / 2SD1980 / 2SD1867 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316.

2SD2195

Contextual Info: h "7 > y / I ransistors 2SD2195 2SD 2195 X M$ * y 7 J\>-f Is - +MNPN V lJ □ > h 7 > V * 2 Epitaxial Planar NPN Silicon Transistor Darlington /M e d iu m Power Amp. • il-ffi rfi&H/Dimensions (U nit: mm) 1) IJ > h hFE 2) K fcrtK 3) A . - X • x = 4) Pc = 2 W T 'a fe 5

2SD2195

Abstract: is2764 BF 246 Darlington npn BF800
Contextual Info: SPICE PARAMETER 2SD2195 * 2SD2195 DARLINGTON NPN BJT model * Date: 2006/12/11 * BJTs with a diode and resistors *C B E .SUBCKT 2SD2195 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model .8071 D1 3 1 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9

2SD2398

Abstract: 2SB1316 2SB1567 2SB1580 2SD1867 2SD1980 2SD2195 T100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor 100V , 2A 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 !External dimensions (Units : mm) 2SD2195 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) Darlington connection for high DC current gain.

2SD2195

Abstract: 100V 2A MPT3 2SB1316 2SB1580 2SD1867 2SD1980 T100 DPT-100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor 100V, 2A 2SD2195 / 2SD1980 / 2SD1867 zExternal dimensions (Unit : mm) 2SD2195 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.

2SD2398

Abstract: 2SB1287 2SB1316 2SB1567 2SB1580 2SD1765 2SD1867 2SD1980 2SD2195 96-227-D85
Contextual Info: Transistors 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 / 2SD1765 96-139-B85 (96-227-D85) 287

Marking DP

Abstract: 2SD2398 ROHM MARKING CODE 3J 100V 2A MPT3 2SD1867 2SB1316 2SB1567 2SB1580 2SD1980 2SD2195
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor 100V , 2A 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 •Features •E xternal dimensions (Units: mm) 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.

TRANSISTOR D 1765

Abstract: TRANSISTOR D 2398 MARKING BB5 ic b1316 ic bb5 B1580 12SB1316 DIODE B1316 transistor 1765
Contextual Info: 2SB1580 12SB1316 / 2SB1567 / 2SB1287 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 / 2SD1765 Transistors I Power Transistor —100V, —2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 •F e a tu re s 1 2 3 4 ) ) ) ) •A b s o lu te maximum ratings (Ta~25"C } D arlington connection fo r high D C current gain.

DIODE C05-10

Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor 100V , 2A 2SD2195 / 2SD1980 / 2SD1867 zExternal dimensions (Units : mm) 2SD2195 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.

2SD2398

Abstract: 2SD2195 2SD1980 100V 2A MPT3 2SB1316 2SB1567 2SB1580 2SD1867 T100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor 100V , 2A 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 !External dimensions (Units : mm) 2SD2195 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) Darlington connection for high DC current gain.

2SD1960

Abstract: 2sd1960 transistor 2SD1765 2SD2398 100V 2A MPT3 2SB1287 2SB1316 2SB1567 2SB1580 2SD1867
Contextual Info: 2SB1580 / 2SB1316 / 2SB1567 / 2SB12B7 2SD2195 / 2SD1960 / 2SD1867 / 2SD2398 / 2SD1765 Transistors I Power Transistor —100V, —2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 •F e a tu re s •A b s o lu te maximum ratings (Ta=25'C ) 1 ) Darlington connection for high DC current gain.

2SD1980

Abstract: 2SD2195 2SD1867 100V 2A MPT3 2SB1316 2SB1580 T100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor 100V , 2A 2SD2195 / 2SD1980 / 2SD1867 zExternal dimensions (Units : mm) 2SD2195 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.

Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

100V 2A MPT3

Abstract: 2SB1316 2SB1580 2SD1980 2SD2195 T100
Contextual Info: 2SB1580 / 2SB1316 Transistors Power Transistor −100V , −2A 2SB1580 / 2SB1316 zExternal dimensions (Units : mm) 2SB1580 4.0 1.5 0.4 1.0 2.5 (1) 0.5 1.6 (2) 3.0 0.5 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.

113 marking code transistor ROHM

Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

B1182

Abstract: B 1182 b1184 D1664
Contextual Info: T r T r a n s sto rs ★ Package m ounted on ceram ic 14 x 18 x 0.7m m • MPT SOT-89 , CPT (DPAK) Types Ty pe . (A) 32 -1 2* MPT (A) CPT 2 S B 1132 — — 2 S B 1184 -5 0 3 — 15 2 S B 1188 2 S B 1182 -32 2 2* 10 2 S B 1189 — 80 2 S B 1260 2SB1181

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

100V 2A MPT3

Abstract: 2SB1316 2SB1580 2SD1980 2SD2195 T100
Contextual Info: 2SB1580 / 2SB1316 Transistors Power Transistor −100V , −2A 2SB1580 / 2SB1316 zExternal dimensions (Unit : mm) 2SB1580 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.

100V 2A MPT3

Abstract: 2SB1316 2SB1580 2SD1980 2SD2195 T100
Contextual Info: 2SB1316 Transistors Power Transistor −100V , −2A 2SB1316 zExternal dimensions (Unit : mm) 2SB1580 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

rkm 33 transistor

Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
Contextual Info: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.

TA143E

Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Contextual Info: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0

Contextual Info: 2SB1316 Transistors Power Transistor −100V , −2A 2SB1316 zExternal dimensions (Unit : mm) 2SB1580 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.