2SD2280 Search Results

2SD2232

Abstract: 2sb1492 2SD2255 2SD2230 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247
Contextual Info: - 286 - W c k & fè » rl ^ f± -in S m iê V'CBO V 2SD223Q 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247 2SD2249 2SD2250 2SD2252 2SD2254 2SD2255 2SD2256 2SD2258 2SD2259 2SD2260 2SD2263 2SD2265 2SD2266 2SD2273 2SD2274 2SD2275 2SD2276 2SD2280 2SD2281

2SB1507

Abstract: SB15 SR1507
Contextual Info: [^ O rd e rin g n u m b e r : EN 3 7 1 3 2SB1507/2SD2280 P N P /N P N Epitaxial Planar Silicon Transistors H igh-C urrent Sw itching Applications A p p lic a tio n s • Relay drivers, high-speed inverters, converters. F e a tu r e s • Low collector-to-em itter saturation voltage : VcE sa t = ( —)0.4Vmax.

n242d

Contextual Info: Ordering number: EN 37 13 2SB1507/2SD2280 No.3713 PNP/NPN Epitaxial Planar Silicon Transistors S A \Y O 50V/7A Switching Applications i A p p licatio n s • Relay drivers, high-speed inverters, converters. F e a tu re s • Low collector-to-emitter saturation voltage : VcE sat = (- )0.4Vmax.

400m1

Contextual Info: Ordering number:ENN3713 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1507/2SD2280 50V/7A High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039D Features [2SB1507/2SD2280] · Low collector-to-emitter saturation voltage :

2SB1507

Abstract: 2SD2280
Contextual Info: SavantIC Semiconductor Product Specification 2SB1507 Silicon PNP Power Transistors DESCRIPTION •With TO-3PML package ·Low collector saturation voltage ·Complement to type 2SD2280 ·Wide area of safe operation APPLICATIONS ·For use in relay drivers ,high-speed

EN3713

Abstract: 2SB1507 2039A
Contextual Info: Ordering number:EN3713 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1507/2SD2280 50V/7A High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039A Features [2SB1507/2SD2280] · Low collector-to-emitter saturation voltage :

2SB1507

Abstract: 2SD2280
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1507 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.4(V)(Max)@IC= -4A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2280 APPLICATIONS

Contextual Info: Continued from previous page Electrical characteristics T a = 25 t Absolute m uknum ratings hreevcEic VC Blnt) nux 0 1C • IB Type No. type AppRcatloas VCBO (V ) VCEO M 1C (A ) PC (W ) (8 > VCE(ul) max GnV) 1C (A ) IB (m A) hFE VCE (V ) frevcE-ic 1C (A )

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf

2SD1213

Abstract: e1aj 2SB1511 2SB827 2SB828 2SB829 2SB904 2SD1063 2SD1064 2SD1065
Contextual Info: sa H y o Low-Saturation Voltage Series T0-3PB,ML Package A p p l F e a t u r e s * Low V C E( sa t ) . ♦ H i g h l y r e s i s t a n t to breakdown be c a use o f wide ASO. ♦ F a s t s w i t c h i n g speed. i c a t i o n s * R elay d r iv e r s . ♦ H ig h -sp e e d i n v e r t e r s .

Contextual Info: SOfiYO Low“Saturati on Voltage Seri e s T0-3PB,ML Package F e a t u r e s ♦ L o w VCE(sat). ♦ H i g h l y resistant to breakdown because of wide ASO. ♦ F a s t switching speed. A p p l i c a t i o n s * Relay drivers. ♦ H i g h - s p e e d inverters.

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1507 Silicon PNP Power Transistor IH DESCRIPTION • Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@lc= -4A • Good Linearity of hFE

2SB1496

Abstract: 2SB1466 2SB1516 2sb148 2SB1464 2SB1465 2SB1467 2SB1468 2SB1469 2SB1470
Contextual Info: - 92 - Ta=25t5. *EP(3Tc=25?C £ 2SB1464 2SBI465 2SB1466 2SB1467 2SB1468 2SB1469 2SB1470 2SB1471 2SB1472 2SB1473 ni-m ine ¿0014l 0 2SB1488 2SB1489 2SB1490 2SB1492 2SB1493 2SB1494 2SB1496 2SB1498 2SB1500 2SB1501 2SB1502 2SB1503 2SB1504 2SB1505 2SB1507 2SB1508