Untitled
Abstract: No abstract text available
Text: 2SB1594 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1594 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V (min) • Complementary to 2SD2449 Absolute Maximum Ratings (Tc = 25°C) Characteristics
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2SB1594
2SD2449
2-21F1A
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2-21F1A
Abstract: 2SB1594 2SD2449
Text: 2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2449 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V (min) · Complementary to 2SB1594 Maximum Ratings (Ta = 25°C) Characteristics Symbol
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2SD2449
2SB1594
2-21F1A
2-21F1A
2SB1594
2SD2449
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2SD2449
Abstract: 2-21F1A 2SB1594
Text: 2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2449 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SB1594 Maximum Ratings (Ta = 25°C) Characteristics
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2SD2449
2SB1594
2-21F1A
2SD2449
2-21F1A
2SB1594
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2SD2449
Abstract: No abstract text available
Text: 2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2449 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SB1594 Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SD2449
2SB1594
2-21F1A
2SD2449
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2-21F1A
Abstract: 2SB1594 2SD2449
Text: 2SB1594 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1594 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V (min) • Complementary to 2SD2449 Maximum Ratings (Tc = 25°C) Characteristics Symbol
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2SB1594
2SD2449
2-21F1A
2-21F1A
2SB1594
2SD2449
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2SD2449
Abstract: 2-21F1A 2SB1594
Text: 2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2449 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SB1594 Maximum Ratings (Ta = 25°C) Characteristics
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2SD2449
2SB1594
2-21F1A
2SD2449
2-21F1A
2SB1594
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
PAL005A
UPC2581V
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228
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SC-63/64)
SC-62)
SC-59
OT-23
2SA1483
2SC3803
2SA1426
2SA1204
2SA1734
2SA2065
2SA1930 2sc5171
tpc8107 equivalent
TPC8107 application circuit
2SC4157 equivalent
2sa1930 transistor equivalent
2SA949 equivalent
2sd880 equivalent
equivalent 2SC5200
2SK2865 Equivalent
marking 4d npn
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2449 PO W ER AM PLIFIER APPLICATIONS Unit in mm 2 0.SM A X . • High Breakdown Voltage : V q e o = 160V (Min.) • Complementary to 2SB1594 ¿ 3 .3 ± 0 .2 pr y > M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SD2449
2SB1594
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2SD2449
Abstract: 2-21F1A 2SB1594 2sb15
Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2449 High Breakdown Voltage : Vqe O = 160 V (Min.) Complementary to 2SB1594 MAXIMUM RATINGS (Tc = 25°C) SYMBOL VCBO
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2SD2449
2SB1594
2SD2449
2-21F1A
2SB1594
2sb15
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2-21F1A
Abstract: 2SB1594 2SD2449
Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2449 Unit in mm PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = 160 V (Min.) Complementary to 2SB1594 M A X IM U M RATINGS (Ta = 25°C)
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2SD2449
2SB1594
2-21F1A
2SD2449
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ic 4510
Abstract: No abstract text available
Text: TO SH IB A TOSHIBA TRANSISTOR 2SB1594 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS 2 S B 1 594 Unit in mm .3 + 0.2 20.5M A X • High Breakdown Voltage : V £E O = —160V (Min.) • Complementary to 2SD2449 MAXIMUM RATINGS (Ta = 25°C)
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2SB1594
--160V
2SD2449
ic 4510
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SD2449 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2449 Unit in mm High Breakdown Voltage : V^EO = 160V (Min.) Complementary to 2SB1594 .3 + 0.2 20.5M A X MAXIMUM RATINGS (Ta = 25°C)
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2SD2449
2SB1594
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Untitled
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE DARLINGTON POWER 2SB1594 U nit in mm POWER AM PLIFIER APPLICATIONS • • 2 0 . 5 MAX High Breakdown Voltage : V c E O ~ —160V (Min.) Complementary to 2SD2449 ¿3.3*02 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SB1594
--160V
2SD2449
--50mA,
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2SB1594
Abstract: 2SD2449 toshiba 1999 semiconductor
Text: 2SB1594 TOSHIBA TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 594 SILICON PNP EPITAXIAL TYPE D ARLING TO N POWER TRANSISTOR Unit in mm High Breakdown Voltage : V^EO = —160 V (Min.) Complementary to 2SD2449 53.3 ±0.2 20.5MAX. f M A X IM U M RATINGS (Ta = 25°C)
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2SB1594
2SD2449
2SB1594
toshiba 1999 semiconductor
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AM PLIFIER APPLICATIONS • • 2SD2449 High Breakdown Voltage : V^EO = 160 V (Min.) Complementary to 2SB1594 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SD2449
2SB1594
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2SB1594
Abstract: 2SD2449
Text: 2SB1594 TO SH IBA SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 594 Unit in mm High Breakdown Voltage : V^EO = —160 V (Min.) Complementary to 2SD2449 0 3 .3 + 0.2 20.5M AX. 1 MAXIMUM RATINGS (Tc = 25°C)
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2SB1594
2SD2449
2SB1594
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR 2SB1594 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 594 Unit in mm POWER AMPLIFIER APPLICATIONS • • 20.5M AX. High Breakdown Voltage : V^EO = —160 V (Min.) Complementary to 2SD2449 gS3.3 ± 0 .2 MAXIMUM RATINGS (Ta = 25°C)
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2SB1594
2SD2449
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2SD2449
Abstract: 2-21F1A 2SB1594 transistor equivalent type
Text: TO SH IBA 2SD2449 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2449 Unit in mm High Breakdown Voltage : V q e O = 160 V (Min.) Complementary to 2SB1594 MAXIMUM RATINGS (Ta = 25°C)
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2SD2449
2SB1594
2SD2449
2-21F1A
transistor equivalent type
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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