2SD886 Search Results

Contextual Info: 2SD886 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SD886 3A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 Low frequency power amplifier High Current 1Emitter 2Collector 3Base Collector 2 REF. 3

2SD886

Contextual Info: 2SD886 2SD886 TRANSISTOR NPN TO-126C FEATURES Power dissipation PCM: 1. EMITTER 1 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55℃ to +150℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB776 TRANSISTOR PNP TO – 126C FEATURES z High Current Output up to 3A z Low Collector-Emitter Saturation Voltage z Complement to 2SD886 1. EMITTER 2. COLLECTOR

2SD886

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD886 TRANSISTOR NPN TO—126 FEATURES Power dissipation PCM: 1. EMITTER 1 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage 50 V V(BR)CBO:

Contextual Info: 2SB776 2SD886 2SB776 PNP Epitaxial Planar Transistors 2SD886 NPN Epitaxial Planar Transistors TO-126 P b Lead Pb -Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Symbol PNP/2SB776 NPN/2SD886 Unit Collector-Emitter Voltage

Contextual Info: TO-126 Plastic-Encapsulate Transistors 2SD886 TRANSISTOR NPN TO—126C FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25℃) 2.COLLECTOR Collector current 3 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range

2SD886

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD886 TRANSISTOR NPN TO-126C FEATURES Power dissipation PCM: 1. EMITTER 1 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage 50 V V(BR)CBO:

2SD892

Abstract: 2SD893 2SD886 2SD886A 2SD892A 2SD893A
Contextual Info: PANASONIC INDL/ELEK-CSEMI} 72C D | biääflSM " q d D w T cl Y ' =Z > y V 7 < f9 2SD886, 2SD886A 2SD886, 2S D8 86A '> ij zj > NPN ELMtäf&y l' —i ' M / S i NPN Triple Diffused Planar K liftiS ifS ä p , S t e f f l/H ig h hKE, AF Power Amplifier U n it * mm

Contextual Info: 2SD886 Plastic-Encapsulate Transistors NPN Features Power dissipation PCM: TO—126 1 W Tamb=25℃ Collector current ICM: 3 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD886 TRANSISTOR NPN TO – 126 FEATURES z Low Voltage z High Current 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

hFE-75

Abstract: g14a 2SD886 2SD886A 800-1500
Contextual Info: 2SD886, 2SD886A 2SD886, 2SD886A V IJ =i ^ N PN = m & W l 7 l s — f M / S i NPN Triple Diffused Planar « ra n « * , &mmnt M^m/mgh hFE, AF Power Amplifier 10.5 + 0.5 • 4# ^ /F e a tu re s • U nit ! mm £ hFE t5 ''S 5 / H i g h hFE 4.8max. 9.8max. Om

2SD886

Contextual Info: Transys Electronics L I M I T E D TO-126 Plastic-Encapsulated Transistors 2SD886 TRANSISTOR NPN TO—126 FEATURES Power dissipation PCM: 1. EMITTER 1 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range

2SD886

Contextual Info: 2SD886 2SD886 TRANSISTOR NPN TO—126 FEATURES Power dissipation PCM: 1. EMITTER 1 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55℃ to +150℃

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SD915

Abstract: 2SD877 2SD889 2SD870 2SD878 2SD873 2SD866 2SD866A 2SD867 2SD868
Contextual Info: - 228 - m n Ta=25cC, *EP(ÏTc=25‘ C 32 2SD866 & ír £ föT ffl & PSW VcBO VcEO ICCDC) Pc Pc* (V) (V) (A) (W) (W) 130 80 7 i.CBO. (max) (/¿A) 40 . HF VcB (V) 10 100 (min) 60 M (max) 260 te Vc e (V) (Ta=25*C) (max) (V) Ic / I e (A) 2 [*EPfätyp<S] (V)

2SB776

Abstract: 2SD886 QW-R204-003
Contextual Info: UTC 2SB776 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB776 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES 1 *High current output up to 3A

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

2SD1039

Abstract: to-53 BUW64A
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220

A150D

Abstract: 2SB776 2SD886
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB776 PNP PLANAR TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC 2SB776 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES * High Current Output Up to 3A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

an6512n

Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.

2SD369A

Abstract: to-53 2SC1025 MJE2491 KT816V matsua
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A PD r 'CBO Max hFE fT on ON) Min (Hz) 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 40 40 40 40 40 25 40 40 40 40 40 60 60 10 10 10 10 10 20 20 20 20 25 25 2 0M 10M 10M 1 0M 3 0M

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components