2SJ32 Search Results

Hitachi DSA001651

Contextual Info: 2SJ323 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

2sj322

Abstract: Hitachi DSA001651
Contextual Info: 2SJ322 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

Contextual Info: 2SJ321 Silicon P C h a n n e l M O S F E T Application T0-220CFM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC —DC

2SJ328

Abstract: 2SJ328-Z J0502
Contextual Info: NEC M O S ^ l # ^ l / \ “7 - M O S F E T M O S Field Effect P ow e r Transistors 2SJ328,2SJ328-Z P ^ q U U /N ^ - M x 2 S J 3 2 8 1 ÎP 5 1 + J U W -M O S FETT * O S F E T i f f i m tt : m m ) > S S * ' i''{6 < X -f •> Y 7 ? - E lï# ^ D C - D C = l> /S - ^ iC Â T !- r o £ £ ,

Contextual Info: 2SJ323 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

Contextual Info: 2SJ322 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

10 HFK

Abstract: 2SJ326 2SJ326-Z MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 DATA SHEET A MOS FIELD EFFECT POWER TRANSISTORS 2SJ326, 2SJ326-Z SWITCHING P-CHANNEL POWER MOS FET

2SJ328

Abstract: 2SJ328-Z MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 DATA SHEET NEC P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR iB— r 2SJ328, 2SJ328-Z SWITCHING P-CHANNEL POWER MOS FET

TC-2461

Contextual Info: I'i4 ì Ci S H E E ! MOS FIELD EFFECT POWER TRANSISTORS 2SJ326,2SJ326-2 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION Th e 2 S J3 2 6 is P-channel M O S Field Effect Transisto r de­ PACKAGE DIMENSIONS in millimeters signed for solenoid, m otor and lam p driver.

transistor t20

Abstract: 2sj328
Contextual Info: P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SJ328,2SJ328-Z SWITCHING P-CHANNEL POWER MOS PET INDUSTRIAL USE DESCRIPTION T he 2SJ328 is P-channel M O S Field Effect Transistor designed PACKAGE DIMENSIONS in millimeters fo r solenoid, m o to r and la m p driver.

NEC C 324 C

Abstract: TC-7959 2SJ324
Contextual Info: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistors 2SJ324,324-Z Pチャネル・パワーMOS FET スイッチング用 2SJ324は，Pチャネル・パワーMOS FETでオン抵抗が低く，またスイッチング特性が優れており，各種アクチュエー

2SJ325

Contextual Info: IC MOSFET SMD Type MOS Field Effect Power Transistors 2SJ325 TO-252 +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3.80 VGS=-4V,ID=-1.6A Built-in G-S Gate Protection Diode +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)=0.15 Unit: mm +0.1 2.30-0.1 +0.25

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ324,324-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 solenoid, motor and lamp driver. +0.2 The 2SJ324 is P-channel MOS Field Effect Transistor designed for 5.0 ±0.2

2SJ328

Abstract: 2SJ328-Z MEI-1202 TEA-1035
Contextual Info: DATA SHEET NEC P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR iB— r 2SJ328, 2SJ328-Z SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ328 is P-channel MOS Field Effect Transistor designed in m illim e te rs for solenoid, m otor and lamp driver.

cds28

Abstract: 2SJ326 2SJ326-Z MEI-1202 TEA-1035 08CC0
Contextual Info: NEC J i_ r DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ326, 2SJ326-Z SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ326 is P-channel MOS Field Effect Transistor de­ in millimeters signed for solenoid, motor and lamp driver.

2SJ322

Contextual Info: 2SJ322 Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC —DC

Contextual Info: 2SJ321 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter

2SJ329

Abstract: MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET N E C kf * A P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SJ329 SWITCHING P-CHANNEL POWER MOS FET

2SJ325

Abstract: 2SJ325-Z MEI-1202 TEA-1035
Contextual Info: DATA SHEET NEC .r _ • _ MOS FIELD EFFECT POWER TRANSISTORS 2SJ325, 2SJ325-Z A SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ325 is P-channel M O S Field Effect Transistor de­ in m illim eters signed fo r solenoid, m otor and lam p driver.

2SJ327

Abstract: 2SJ327-Z MEI-1202 TEA-1035 TC-2462
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET A MOS FIELD EFFECT POWER TRANSISTORS 2SJ327, 2SJ327-Z SWITCHING P-CHANNEL POWER MOS FET

TA-0053

Abstract: 2SJ320 ITR00433 ITR00434 ITR00435 ITR00436
Contextual Info: 注文コード No. N 4 6 1 5 A 2SJ320 No. 4 6 1 5 A 三洋半導体ニューズ 52599 新 半導体ニューズ No. 4615 とさしかえてください。 2SJ320 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用

TA-0053

Abstract: 2SJ320
Contextual Info: Ordering number:EN4615A P-Channel Silicon MOSFET 2SJ320 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ320]

2SJ321

Contextual Info: 2SJ321 Silicon P-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • H igh speed sw itching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for sw itching regulator, D C -D C converter

j325

Abstract: TC-2460
Contextual Info: MOS FIELD EFFECT POWER TRANSISTORS 2SJ325, 2SJ325-Z SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ325 is P-channel MOS Field Effect Transistor d e ­ PACKAGE DIMENSIONS in m illim eters signed for solenoid, motor and lamp driver. FEATURES