2SJ40 Search Results

2SJ40 Datasheets (68)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SJ40	Unknown	FET Data Book	Scan	PDF	92.14KB	2
2SJ40	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	90.68KB	1
2SJ400	Sanyo Semiconductor	P-Channel Silicon MOSFET	Original	PDF	42.19KB	4
2SJ400	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	111.2KB	1
2SJ400	Sanyo Semiconductor	Ultra High Speed Switching MOSFET	Scan	PDF	187.23KB	1
2SJ400	Sanyo Semiconductor	TO-3PB, ZP, SMP Type Transistors	Scan	PDF	103.11KB	1
2SJ400	Sanyo Semiconductor	Large Signal Power MOSFET	Scan	PDF	511.51KB	3
2SJ401	Toshiba	TRANS MOSFET P-CH 60V 20A 3(2-10S2B)	Original	PDF	447.95KB	6
2SJ401	Toshiba		Original	PDF	44.05KB	9
2SJ401	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
2SJ401	Toshiba	P-Channel MOSFET	Original	PDF	426.96KB	6
2SJ401	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SJ401	Toshiba	Silicon P channel field effect transistor for high speed, high current switching applications, relay drive, DC-DC converter and motor drive applications	Scan	PDF	287.62KB	5
2SJ401	Toshiba	FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (LL-pi-MOSV)	Scan	PDF	316.58KB	5

2SJ401(Q)	Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 20A TO-220FL	Original	PDF		6
2SJ401(TE24L)	Toshiba	TRANS MOSFET P-CH 60V 20A 3(2-10S2B) T/R	Original	PDF	447.95KB	6
2SJ402	Toshiba	TRANS MOSFET P-CH 60V 30A 3(2-10S2B)	Original	PDF	448.07KB	6
2SJ402	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
2SJ402	Toshiba	P-Channel MOSFET	Original	PDF	427.33KB	6
2SJ402	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45

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Rochester Electronics LLC 2SJ403 2SJ403 - J-II (EXISTING TYPE), 2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	2SJ403	Bulk			384	1 - 10 - 100 - 1000 $0.78 10000 $0.78	Buy Now
	2SJ403	Bulk			384	1 - 10 - 100 - 1000 $0.78 10000 $0.78	Buy Now
Rochester Electronics LLC 2SJ409-90STR MOSFET P-CH 100V 20A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SJ409-90STR	Bulk			47	1 - 10 - 100 $6.42 1000 $6.42 10000 $6.42	Buy Now
Samtec Inc RF047-A-92SJ-404040-0700 "50 OHM Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RF047-A-92SJ-404040-0700	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation 2SJ409-90STR 2SJ409-90STR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	2SJ409-90STR		3,000		49	1 - 10 - 100 $7.33 1000 $6.55 10000 $6.17	Buy Now
	2SJ409-90STR		2,000		49	1 - 10 - 100 $7.33 1000 $6.55 10000 $6.17	Buy Now
Rochester Electronics	2SJ409-90STR		5,000		1	1 - 10 - 100 $5.86 1000 $5.24 10000 $4.94	Buy Now
onsemi 2SJ403 2SJ403
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SJ403		1,770		399	1 - 10 - 100 - 1000 $0.78 10000 $0.78	Buy Now
Rochester Electronics	2SJ403		11,070		1	1 - 10 - 100 $0.75 1000 $0.63 10000 $0.56	Buy Now

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2SJ40 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SJ402 Contextual Info: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ402 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m TO-220FL DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10.3M A X	OCR Scan	2SJ402 O-220FL	PDF
J402 Abstract: 2SJ402 Contextual Info: 2SJ402 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅤ 2SJ402 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用単位: mm z 4V 駆動です。 : RDS (ON) = 29 mΩ (標準) z オン抵抗が低い。	Original	2SJ402 2-10S1B 2002/95/EC) J402 2SJ402	PDF
J407 Abstract: 2SJ407 Contextual Info: 2SJ407 東芝電界効果トランジスタシリコンPチャネルMOS形 π−MOSⅤ 2SJ407 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用単位: mm z 4V 駆動です。 z オン抵抗が低い。 : RDS (ON) = 0.8Ω (標準)	Original	2SJ407 -100A -200V) -10VID SC-67 2-10R1B 2002/95/EC) J407 2SJ407	PDF
2SJ401 Contextual Info: 2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ401 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) High forward transfer admittance	Original	2SJ401 2SJ401	PDF
Contextual Info: 2SJ408 L , 2SJ408(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter	OCR Scan	2SJ408	PDF
2SJ408 Abstract: Hitachi DSA001651 Contextual Info: 2SJ408 L , 2SJ408(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter	Original	2SJ408 Hitachi DSA001651	PDF
Hitachi 2SJ Abstract: Hitachi DSA001651 Contextual Info: 2SJ409 L , 2SJ409(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter	Original	2SJ409 D-85622 Hitachi 2SJ Hitachi DSA001651	PDF
2SJ407 Abstract: FAJ 20 Contextual Info: TOSHIBA 2SJ407 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M OSV 2SJ407 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 , "Ly	OCR Scan	2SJ407 -200V) 2SJ407 FAJ 20	PDF
2SJ402 Contextual Info: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance	Original	2SJ402 2SJ402	PDF
2SJ405 Abstract: "2063a ITR00497 ITR00498 ITR00499 2063A Contextual Info: 注文コード No. N 5 5 2 2 A 2SJ405 No. 5 5 2 2 A 三洋半導体ニューズ 52599 新開発速報 No. ※ 5522 とさしかえてください。 2SJ405 特長 P チャネル MOS 形シリコン電界効果トランジスタ超高速スイッチング用	Original	2SJ405 ITR00497 ITR00498 ITR00499 2SJ405 "2063a ITR00497 ITR00498 ITR00499 2063A	PDF
2SJ407 Contextual Info: TOSHIBA 2SJ407 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSV 2SJ407 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS r Low Drain-Source ON Resistance : Rd S(ON)“ 0.8O (Typ.)	OCR Scan	2SJ407 -200V) 2SJ407	PDF
transistor j402 Abstract: J402 TOSHIBA Contextual Info: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance	Original	2SJ402 transistor j402 J402 TOSHIBA	PDF
Contextual Info: 2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ401 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) z High forward transfer admittance	Original	2SJ401	PDF
J401 Abstract: 2SJ401 Contextual Info: 2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ401 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) High forward transfer admittance	Original	2SJ401 J401 2SJ401	PDF

2SJ406 Contextual Info: 2SJ406 注文コード No. N 5 5 2 3 三洋半導体データシート N 2SJ406 P チャネル MOS 型シリコン電界効果トランジスタ汎用スイッチングデバイス特長・低オン抵抗。・超高速スイッチング。・低電圧駆動。	Original	2SJ406 --12A IT13328 IT13329 IT13327 2SJ406	PDF
2SJ402 Contextual Info: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) l High forward transfer admittance	Original	2SJ402 2SJ402	PDF
2SJ408 Contextual Info: 2SJ408 L , 2SJ408 S Silicon P-Channel MOS FET Application HDPAK 4 High speed power switching 4 Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC	Original	2SJ408	PDF
Contextual Info: TOSHIBA 2SJ407 TOSHIBA FIELD EFFECT TRANSISTOR 3 <; SILICON P CHANNEL MOS TYPE tt-MOSV I ¿ L Î 1 7 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •	OCR Scan	2SJ407 --200V) ----50V,	PDF
J402 Abstract: 2SJ402 Contextual Info: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance	Original	2SJ402 J402 2SJ402	PDF
Hitachi 2SJ Abstract: Hitachi DSA002779 Contextual Info: 2SJ409 L , 2SJ409(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter	Original	2SJ409 2SJ409stics Hitachi 2SJ Hitachi DSA002779	PDF
2SJ409 Abstract: Hitachi 2SJ Hitachi DSA00276 Contextual Info: 2SJ409 L , 2SJ409(S) Silicon P-Channel MOS FET ADE-208-1197 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source	Original	2SJ409 ADE-208-1197 D-85622 Hitachi 2SJ Hitachi DSA00276	PDF
2SJ401 Contextual Info: T O S H IB A 2SJ401 2SJ401 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Souree ON Resistance : R d S (ON) — 33 m il (Typ.)	OCR Scan	2SJ401 O-22QFL 2SJ401	PDF
TA-2164 Abstract: it-007 N642 2SJ400 Contextual Info: 注文コード No. N 6 4 2 2 2SJ400 No. N6422 N0199 新 2SJ400 特長 P チャネル MOS 形シリコン電界効果トランジスタ超高速スイッチング用・低オン抵抗。・超高速スイッチング。・4V 駆動。・面実装に対応し工数低減およびセットの高密度 , 小型化が可能となる。	Original	2SJ400 N6422 N0199 --35A IT00716 IT00717 IT00718 IT00719 TA-2164 it-007 N642 2SJ400	PDF
HAT2005F Abstract: HAT1001F Contextual Info: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SJ408 L 2SJ505(L) 2SJ408(S) 2SJ505(S) HAT1001F	OCR Scan	2SJ408 HAT1001F HAT1002F HAT1004F HAT1005F HAT1006F HAT1007F HAT1008F HAT1009F HAT2005F	PDF

2SJ40 Search Results

2SJ40 Datasheets (68)

2SJ40 Price and Stock

Rochester Electronics LLC 2SJ403

Rochester Electronics LLC 2SJ409-90STR

Samtec Inc RF047-A-92SJ-404040-0700

Renesas Electronics Corporation 2SJ409-90STR

onsemi 2SJ403

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